IE-1000 MIXER Search Results

Contextual Info: SSf-IE Series W to tilOO M H //JO dB Sideband Rejection ! Quadrature Phased Sasaiimd Inputr PRINCIPAL SPECIFICATIONS Center Usable Model Frequency, Bandwidth, Number_ f0, MHz_ MHz SSF-1 E-*B 10 - 1000 10% of f0 For complete Model Number replace! * with desired Center Frequency in MHz.

Contextual Info: an A M P com pany E-Series Plug-In Mixer 1 -1000 MHz EMT-2 V 3 .0 0 Features R-3 T O P V IE 1 MOTE : PJNI ¡NUMBERS DO NOT APPEAR DIN] UN IT. FOR REFERENCE ONLY. • LO Power: +7 dBm • Up to +1 dBm RF PIN 5 IS CASE GROUND Specifications @ 25°c 0 .2 5 5 M AX

s21b

Abstract: s22b KSC2758 package marking s22b ic s21b marking s21b GPB15
Contextual Info: KSC2758 KSC2758 RF. Mixer for UHF Tuner • High Power Gain : GPE=17dB TYP. at f=900MHz • Low Noise Figure : NF=2.8dB(TYP.) at f=900MHz 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor C 245 b

Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C C B E TO-92 B SOT-23 E Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

transistor 26

Abstract: MMBTH11 MPSH11 Q100 Z-235 L1245 transistor t 270
Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

transistor marking 3em

Abstract: 556 ITT MMBTH10 sot-23 Marking YRE
Contextual Info: MMBTH10 NPN 1.1 GHz RF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 FEATURES Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the

s21b

Abstract: s22b package marking s22b ic s21b KSC2759
Contextual Info: KSC2759 KSC2759 Mixer, Oscillator for UHF Tuner 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage

rf transistor mark code H1

Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

CBVK741B019

Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

MPS-H20

Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*

MPSH20

Abstract: MMBTH20 Q100 500 uf 50v npn, transistor, sc 107 b
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*

KSC1674

Abstract: RF POWER TRANSISTOR final 100MHz rf fairchild transistor 100mhz
Contextual Info: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92

KSC1674

Contextual Info: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: MMBTH24 NPN SURFACE MOUNT VHF/UHF TRANSISTOR SPICE MODEL: MMBTH24 Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA

Contextual Info: MMBTH24 NPN SURFACE MOUNT VHF/UHF TRANSISTOR SPICE MODEL: MMBTH24 Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA

Contextual Info: MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR SPICE MODEL: MMBTH10 Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA

Contextual Info: MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA

KSC2786

Abstract: 10.7 MHZ
Contextual Info: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSC2786

Contextual Info: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR SPICE MODEL: MMBTH10 Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA

KSC2786

Contextual Info: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

ksc1674y

Abstract: GFE10 KSC1674C-YTA
Contextual Info: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92

Contextual Info: SPICE MODEL: MMBTH10 MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators • • High Current Gain Bandwidth Product SOT-23 Ideal for Mixer and RF Amplifier Applications with collector