30u60
Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Text: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600
|
Original
|
-200A/
TB60S
TA60CS
TA60C
04E120
09E120
30u60
ixys dsei 8-06
ixys dsei
STTH 3060
MUR 8120
ixys dsei 12-12
10U60
RHRG 8120
40U60
ixys dsei 60-06
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFET MODULE SF20QAAK UL!E76102 M) SF 2 0 0 AA1 0 is an isolated MOSFET module designed for fast switching applications of low voltage/high current. SF 2 0 0 AA1 0 enable you to control high power with compact package. • Id= 200A, Vdss=I00V • Compact Package
|
OCR Scan
|
SF20QAAK)
E76102
SF200AA10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFET IC DIP Type SMD Type Type Product specification 2N60 TO-220 Features RDS ON = 3.8 @VGS = 10V. Low gate charge ( typical 9.0 nC). Low Crss ( typical 5.0 pF). Fast switching capability. 1 Gate 2 Drain 3 Source Avalanche energy specified Improved dv/dt capability.
|
Original
|
O-220
|
PDF
|
KHB3D0N70F
Abstract: KHB3D0N70P MOSFET 30A 700V
Text: SEMICONDUCTOR KHB3D0N70P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power
|
Original
|
KHB3D0N70P/F
KHB3D0N70P
KHB3D0N70F
KHB3D0N70F
MOSFET 30A 700V
|
PDF
|
power mosfet 80v 150a
Abstract: No abstract text available
Text: SEMICONDUCTOR KU045N10P TECHNICAL DATA N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,
|
Original
|
KU045N10P
IS80A,
dI/dt200A/,
power mosfet 80v 150a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFET IC SMDType DIP Type N-Channel MOSFET 2N60 TO-220 Features RDS ON = 3.8 @VGS = 10V. Low gate charge ( typical 9.0 nC). Low Crss ( typical 5.0 pF). Fast switching capability. 1 Gate 2 Drain 3 Source Avalanche energy specified Improved dv/dt capability.
|
Original
|
O-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFET MODULE SF20OBA10 S F 2 0 0 B A 10 is an isolated power M OSFET module designed fast switching applications of high voltage and current, mounting base of the module is electrically isolated from semic ductor elements for simple heatsink construction.
|
OCR Scan
|
SF20OBA10
700ns
SF200BA10
|
PDF
|
SF200AA20
Abstract: No abstract text available
Text: M O S F E T M O D U LE SF200AA20 ULIE76102 M S F 2 0 0 A A 2 0 is an isolated MOSFET module designed for fast switching applications of low voltage/high current. S F 2 0 0 A A 2 0 enable you to control high power with compact package. • lo = 200A, VDss= 200V
|
OCR Scan
|
SF200AA20
ULIE76102
IO-200A
200yU
QQQ22S1
SF200AA20
|
PDF
|
9d0n90n
Abstract: KHB 9d0n90n khb9d0n90n khb9d0n90na 2663 transistor 9d0n90 54NC khb9d0n90 transistor marking 020
Text: SEMICONDUCTOR KHB9D0N90NA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
|
Original
|
KHB9D0N90NA
dI/dt200A/,
9d0n90n
KHB 9d0n90n
khb9d0n90n
khb9d0n90na
2663 transistor
9d0n90
54NC
khb9d0n90
transistor marking 020
|
PDF
|
Amps500Volts
Abstract: No abstract text available
Text: ET830 5 Amps， ，500Volts N-Channel MOSFET • Description The ET830 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
ET830
Amps500Volts
ET830
O-220
O-220F
O220F
|
PDF
|
2n60
Abstract: 2N60 TO-252 2n60 MOSFEt ET2N60 ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F
Text: 2N60 N2 Amps，600Volts N-Channel MOSFET • Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
Amps600Volts
ET2N60
O-220
O-220F
O-251
O-252
O220F
2n60
2N60 TO-252
2n60 MOSFEt
ISD20A
TO252 rthjc
CHARACTERISTICS DIODE 2n60
to-251
TO-252
2N60 TO220F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ET740 10.5 Amps， ，400Volts N-Channel MOSFET • Description The ET740 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
ET740
Amps400Volts
ET740
O-220
O-220F
O220F
|
PDF
|
ET840
Abstract: No abstract text available
Text: ET840 9 Amps， ，500Volts N-Channel MOSFET • Description The ET840 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
ET840
Amps500Volts
ET840
O-220
O-220F
O220F
|
PDF
|
TO252 rthjc
Abstract: 4N60 TO-252 4n60 to252 4n60 mosfet 4n60 4N60 application note TO-252 16nC TO-252 N-channel MOSFET TO-252 N-channel power MOSFET
Text: 4N60 4 Amps， ，600Volts N-Channel MOSFET • Description The ET4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
Amps600Volts
ET4N60
O-220
O-220F
O220F
TO252 rthjc
4N60 TO-252
4n60 to252
4n60
mosfet 4n60
4N60 application note
TO-252
16nC
TO-252 N-channel MOSFET
TO-252 N-channel power MOSFET
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: KHB4D5N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
|
Original
|
KHB4D5N60P/F
|
PDF
|
7N60
Abstract: No abstract text available
Text: 7N60 7 Amps， ，600Volts N-Channel MOSFET • Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
Amps600Volts
ET7N60
O-220
O220F
7N60
|
PDF
|
mosfet 60a 200v
Abstract: ET73 N-channel enhancement 200V 60A
Text: ET730 6 Amps， ，400Volts N-Channel MOSFET • Description The ET730 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
ET730
Amps400Volts
ET730
O-220
O220F
mosfet 60a 200v
ET73
N-channel enhancement 200V 60A
|
PDF
|
2SJ662
Abstract: IT08765
Text: 2SJ662 Ordering number : EN8587 P-Channel Silicon MOSFET 2SJ662 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.
|
Original
|
2SJ662
EN8587
2SJ662
IT08765
|
PDF
|
idp-200a
Abstract: 2SK3835 K383
Text: 2SK3835 Ordering number : EN8637 N-Channel Silicon MOSFET 2SK3835 General-Purpose Switching Device Applications Features • • • Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
|
Original
|
2SK3835
EN8637
idp-200a
2SK3835
K383
|
PDF
|
kf80n08
Abstract: KF80N08P kf80n08f 701p2
Text: SEMICONDUCTOR KF80N08P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF80N08P A It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS
|
Original
|
KF80N08P/F
KF80N08P
Fig15.
Fig16.
Fig17.
kf80n08
KF80N08P
kf80n08f
701p2
|
PDF
|
D 92 M - 02 DIODE
Abstract: KF70N06
Text: SEMICONDUCTOR KF70N06P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF70N06P A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS
|
Original
|
KF70N06P/F
KF70N06P
KF70N06P)
O-220AB
KF70N06F
Fig15.
Fig16.
Fig17.
D 92 M - 02 DIODE
KF70N06
|
PDF
|
MOSFET
Abstract: Planar KF10N65F
Text: SEMICONDUCTOR KF10N65F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
|
Original
|
KF10N65F
Fig12.
Fig13.
Fig14.
MOSFET
Planar
KF10N65F
|
PDF
|
KF7N68F
Abstract: Diode is 10-16
Text: SEMICONDUCTOR KF7N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
|
Original
|
KF7N68F
Fig11.
Fig12.
Fig13.
Fig14.
KF7N68F
Diode is 10-16
|
PDF
|
KHB9D0N90N1
Abstract: khb9d0n90n khb9d0n90 2663 transistor
Text: SEMICONDUCTOR KHB9D0N90N1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
|
Original
|
KHB9D0N90N1
KHB9D0N90N1
khb9d0n90n
khb9d0n90
2663 transistor
|
PDF
|
