KWH028Q02-F03
Abstract: ILI9320 2.8 TFT LCD 2908-05WB-MG max2331 CON-HDR-1X3-100 HD01DICT-ND FOD2712R1VCT-ND Led driver 50W schematic top NDS331N
Text: Stellaris Ethernet-Enabled Intelligent Display Module IDM Reference Design Kit User ’s Manual RDK-IDM-0 5 Co pyrigh t 2 008– 201 0 Te xas In strumen ts Copyright Copyright © 2008–2010 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.
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CON-HDR-2X5-050
Abstract: C44-10BSA1-G TSSOP54 HR961160C microSD card adapter circuit diagram K350QVG-V1-F C44-08BSA1-G WM8510 W25X80AVSSIG DS-LM39B92
Text: Stellaris Intelligent Display Module Single-Board Computer IDM-SBC Reference Design Kit User ’s Manual RDK-IDM-SBC-UM-05 Co pyrigh t 2 009– 201 1 Te xas In strumen ts Copyright Copyright © 2009–2011 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.
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RDK-IDM-SBC-UM-05
CON-HDR-2X5-050
C44-10BSA1-G
TSSOP54
HR961160C
microSD card adapter circuit diagram
K350QVG-V1-F
C44-08BSA1-G
WM8510
W25X80AVSSIG
DS-LM39B92
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Transmeta
Abstract: 10G CX4 MBF200 "lattice semiconductor" 44 codec MB86V01 mission cyrus 007B FUJITSU FRAM OFDM-256 0.18um structured ASIC
Text: Fujitsu Microelectronics America, Inc. Executive Briefing Growing Through Innovation and IDM Leadership September 22, 2004 Fujitsu Microelectronics America, Inc. 9/22/04 1 Program • • • • Introduction Emi Igarashi Corporate Overview Ken Iida Products Update
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MBF200
IDB1394
Transmeta
10G CX4
"lattice semiconductor" 44 codec
MB86V01
mission cyrus
007B
FUJITSU FRAM
OFDM-256
0.18um structured ASIC
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c-mac 1553
Abstract: FC1553 TLO 64 N IDM1553 FC1553TI 1553 bus controller idm1553-15 MIL-STD-15538 CLK32 IDHT553-25
Text: MIL.STD.15538 INTEGRATED DATABUSMODULE MIL. LINK IDM1553 ABRIDGED VERSION - PLEASE REFER TO SEPARATEDA'IA SHEET FOR FULL INFORMATION The C-MAC IDM 1553 (MIL-LINK) Integrated DatabusModule is a completeMIL-STD 15538 or STANAG 3838 interface,capableof operationin Bus
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IDM1553
8KX16SHAREDRAM
c-mac 1553
FC1553
TLO 64 N
IDM1553
FC1553TI
1553 bus controller
idm1553-15
MIL-STD-15538
CLK32
IDHT553-25
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Untitled
Abstract: No abstract text available
Text: IRFY140M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)18.4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)73.6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)
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IRFY140M
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24N100
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS ID25 IXFK 24N100 IXFX 24N100 RDS on trr N-Channel Enhancement Mode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM
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24N100
24N100
247TM
O-264
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Untitled
Abstract: No abstract text available
Text: BTS240A Transistors N-Channel TempFET V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)58 @Temp (øC)73 IDM Max (@25øC Amb)232 Absolute Max. Power Diss. (W)170 Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.74
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BTS240A
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Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM
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6N100Q
6N100Q
O-247
O-268
Sour100
O-268AA
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM
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6N100Q
6N100Q
O-247
O-268
O-268AA
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFN 24N100 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 IDM IAR TC = 25°C
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24N100
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3350c
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 21 A IDM
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21N50Q
O-247
O-268
3350c
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32n50
Abstract: ixfh 26 n 49 30N50
Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C
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30N50
32N50
O-247
32N50
ixfh 26 n 49
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Untitled
Abstract: No abstract text available
Text: Power MOSFET IXTX 24N100 VDSS = 1000 V 24 A ID25 = RDS on ≤ 0.40 Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM
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24N100
247TM
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MPF910 equivalent
Abstract: .model for MPF910 BC237 TRANSISTOR mpf910
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF910 N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk ID IDM 0.5 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C
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MPF910
MPF910
MFE910
226AE)
Max218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MPF910 equivalent
.model for MPF910
BC237
TRANSISTOR mpf910
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32n50
Abstract: 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50
Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C
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30N50
32N50
125OC
32n50
32n50k
transistor ixfh application note
30N50
1910 0016 diode
125OC
IXFH30N50
IXFH32N50
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Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C
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30N50
32N50
125OC
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BS107A equivalent
Abstract: BS107 "direct replacement" BC237 BS107 BC108 characteristic
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit VDS 200 Vdc VGS VGSM ± 20 ± 30 ID IDM 250 500 PD 350 mW TJ, Tstg – 55 to 150 °C Drain – Source Voltage
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BS107
BS107A
226AA)
Source218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BS107A equivalent
BS107 "direct replacement"
BC237
BC108 characteristic
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4 wire proximity
Abstract: Hartmann Braun hartmann
Text: Data Sheet 10/72-1.45-1 EN Melody CBC 10 - Output module - control From version 1.0 General The configuration of the CBC 10 with individual drive modules IDM is carried out with the help of Engineering Station and is described in detail in the technical description for the function block (30/72-2990). All parameters
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Abstract: No abstract text available
Text: IDM 2901A National Sem iconductor IDM 2901A 4-Bit Bipolar Microprocessor General Description Features and Benefits The IDM 2901A 4-bit bipolar microprocessor slice is a cascadable device designed fo r use in Central Processing Units, programmable microprocessors, peripheral c ontrol
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IDM2901A
IDM2901ANC
IDM2901
2901ADM
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Untitled
Abstract: No abstract text available
Text: Tin IDM ^ -C = 10m" 0,25pm Gold IDS (-T End Assembly Required) A -S T “ X” - S “ XX” : Stripped & Tinned : Daisy Chain Single Specify Suffix from table. All dimensions are ± 1/16". Not available in 28 positions and higher. “XX” ± 10p" (0,25pm) Gold IDM
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Untitled
Abstract: No abstract text available
Text: IDM29901 National Semiconductor IDM 29901 TRI-STATE Octal Register General Description Features and Benefits The IDM29901 is an octal edge-triggered flip -flo p w ith TRI-STATE outputs that are specifically designed to drive high-capacitance loads or relatively low-impedance
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IDM29901
IDM29901
IDM29901JM
IDM29901JM/883
IDM29901NC
IDM29901JC
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idm 73
Abstract: IRF244
Text: H EXFET Power MOSFETs International S<Ei R e c tifie r Hermetic Package TO-3 N-Channel Part Number Vos Drafn Roston Source Voltage Volts) On-State Resistance (Ohms) Iq Continuous Drain Current 25°C Case (Amps) IDM Drain Current (Amps) Pq Max Power Dissipation
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IRF223
IRF221
IRF233
IRF231
IRF243
IRF241
IRF253
IRF251
IRF222
IRF220
idm 73
IRF244
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IDM2901
Abstract: No abstract text available
Text: IDM2900 Family IDM 2900 Family Applications Information SY STEM A R C H IT E C T U R E OF TH E IDM2901A ment an address, jump to any address, and link subrou tines. Control bits for the "n e xt instruction" originate in the "microprogram store." This arrangement plus the
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IDM2900
IDM2901A
74S158
CS-10
IDM2901
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idm155315
Abstract: c-mac 1553 IDM1553 MIL-STD-1553 common mode rejection ratio test 1553B c-mac overview A/Detector/"Detector IC"/"CD"/vhdl code for MIL 1553
Text: C R O R C C U I T S MIL-STD-1553B INTEGRATED DATABUS MODULE MIL - LINK IDM1553 ABRIDGED VERSION - PLEASE REFER TO SEPARATE DATA SHEET FOR FULL INFORMATION The C-MAC IDM 1553 (MIL-LINK) Integrated Databus Module is a complete MIL-STD 1553B or STANAG 3838 interface, capable of operation in Bus
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MIL-STD-1553B
IDM1553
1553B
idm155315
c-mac 1553
IDM1553
MIL-STD-1553
common mode rejection ratio test 1553B
c-mac overview
A/Detector/"Detector IC"/"CD"/vhdl code for MIL 1553
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