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Infineon Technologies AG IDH15S120AKSA1 DIODE SIL CARB 1.2KV 15A TO220-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IDH15S120AKSA1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	IDH15S120AKSA1		499		26	1 - 10 - 100 $14.0875 1000 $12.7375 10000 $12.7375	Buy Now
	IDH15S120AKSA1		488		26	1 - 10 - 100 $14.0875 1000 $12.7375 10000 $12.7375	Buy Now
	IDH15S120AKSA1		176		26	1 - 10 - 100 $14.0875 1000 $12.7375 10000 $12.7375	Buy Now
Bristol Electronics	IDH15S120AKSA1		80			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IDH15S120AKSA1		64			1 $19.26 10 $19.26 100 $14.98 1000 $14.98 10000 $14.98	Buy Now
Rochester Electronics	IDH15S120AKSA1		1,163		1	1 $11.99 10 $11.99 100 $11.27 1000 $10.19 10000 $10.19	Buy Now
Rochester Electronics LLC IDH15S120AKSA1 DIODE SIL CARB 1.2KV 15A TO220-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IDH15S120AKSA1	Tube			25	1 - 10 - 100 $12.47 1000 $12.47 10000 $12.47	Buy Now
Infineon Technologies AG IDH15S120
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IDH15S120		194			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IDH15S120 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IDH15S120		Infineon Technologies	Silicon Carbide Schottky Diodes - NEW 3G now available!; Package: PG-TO220-2; Technology: thinQ! 2G; V: 1,200.0 V; I_F (typ): 15.0 A; Q_C (typ): 54.0 nC; Package: TO-220 real 2pin		Original	PDF
IDH15S120AKSA1		Infineon Technologies	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1200V 15A TO220-2		Original	PDF

IDH15S120 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IDH15S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 54 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDH15S120 PG-TO220-2
g25n120 Abstract: IKW25N120H3 IDH15S120 igw25n120 IgW25N120H3 pspice high frequency igbt Text: IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial & Multimarket IGW25N120H3 High speed switching series third generation	Original	PDF	IDH15S120 IGW25N120H3 g25n120 IKW25N120H3 IDH15S120 igw25n120 IgW25N120H3 pspice high frequency igbt
d15s120 Abstract: IDH15S120 PG-TO220 JESD22 Text: IDH15S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior V DC 1200	Original	PDF	IDH15S120 PG-TO220-2 PG-TO22ngerous d15s120 IDH15S120 PG-TO220 JESD22
D15S120 Abstract: PG-TO220-2 PG-TO220 IDH15S120 JESD22 C15T Text: IDH15S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 54 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDH15S120 PG-TO220-2 IDH15S1ngerous D15S120 PG-TO220-2 PG-TO220 IDH15S120 JESD22 C15T
igbt welding machine scheme Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3 Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and	Original	PDF
IJW120R070T1 Abstract: IJW120R silicon carbide Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description	Original	PDF	IJW120R070T1 IJW120R070T1 IJW120R silicon carbide
Untitled Abstract: No abstract text available Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description	Original	PDF	IJW120R100T1
PX3544 Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly	Original	PDF	lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
TLE4957C Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970 Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!	Original	PDF
Untitled Abstract: No abstract text available Text: IGBT IGW25N120H3 Datasheet IndustrialPowerControl IGW25N120H3 Highspeedswitchingseriesthirdgeneration	Original	PDF	IDH15S120 IGW25N120H3