TR510
Abstract: APT10021JLL DSA003641
Text: APT10021JLL 1000V 37A 0.210Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10021JLL
OT-227
TR510
APT10021JLL
DSA003641
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Untitled
Abstract: No abstract text available
Text: APT10021JLL 1000V 37A 0.210Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10021JLL
OT-227
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APT5014B2VFR
Abstract: APT5014LVFR
Text: APT5014B2VFR APT5014LVFR 500V POWER MOS V FREDFET 37A 0.140Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT5014B2VFR
APT5014LVFR
O-264
O-264
APT5014B2VFR
O-247
APT5014LVFR
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PDF
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Untitled
Abstract: No abstract text available
Text: APT5014B2VFR APT5014LVFR 37A 0.140Ω 500V POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT5014B2VFR
APT5014LVFR
O-264
O-264
APT5014B2VFR
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