Untitled
Abstract: No abstract text available
Text: TELEFUNKEN Semiconductors BPV 11 F Silicon NPN Phototransistor Description BPV 11 F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p y 900nm . The
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900nm)
1994o
D-74025
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TEMT1000
Abstract: TEMT1020 TEMT1030 TEMT1040 TSML1000
Text: TEMT1000, TEMT1020, TEMT1030, TEMT1040 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES TEMT1000 TEMT1020 • • • • • TEMT1030 • • • TEMT1040 16757 • • Package type: surface mount Package form: GW, RGW, yoke, axial
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TEMT1000,
TEMT1020,
TEMT1030,
TEMT1040
TEMT1000
TEMT1020
TEMT1030
TSML1000
J-STD-020
TEMT1000
TEMT1020
TEMT1030
TEMT1040
TSML1000
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Untitled
Abstract: No abstract text available
Text: TEMT1000, TEMT1020, TEMT1030, TEMT1040 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES TEMT1000 TEMT1020 • • • • • TEMT1030 • • • TEMT1040 16757 • • Package type: surface mount Package form: GW, RGW, yoke, axial
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TEMT1000,
TEMT1020,
TEMT1030,
TEMT1040
TEMT1000
TEMT1020
TSML1000
J-STD-020
2002/95/EC
2002/96/EC
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Lithium-Ion cell fuel gauging with dallas second
Abstract: DS2438
Text: Application Note 131 Lithium-Ion Cell Fuel Gauging with Dallas Semiconductor Devices www.dalsemi.com 2000 Dallas Semiconductor DS2438 DS2760 BATTERY: 59% Voltage, Current, and Temperature Measurements. Cell Characterization Data. Accurate Capacity Estimation.
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DS2438
DS2760
Lithium-Ion cell fuel gauging with dallas second
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DS2438K
Abstract: mah1400 DS2438 DS2760 700 Lithium-Ion Cell Fuel Gauging with Dallas Semiconductor
Text: Application Note 131 Lithium-Ion Cell Fuel Gauging with Dallas Semiconductor Devices www.dalsemi.com 2000 Dallas Semiconductor DS2438 DS2760 BATTERY: 59% Voltage, Current, and Temperature Measurements. Cell Characterization Data. Accurate Capacity Estimation.
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DS2438
DS2760
DS2438
DS2438K
mah1400
DS2760
700 Lithium-Ion Cell Fuel Gauging with Dallas Semiconductor
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Untitled
Abstract: No abstract text available
Text: TEMT1000, TEMT1020, TEMT1030, TEMT1040 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant TEMT1000 FEATURES TEMT1020 • • • • • TEMT1030 • • • • • TEMT1040 16757 Package type: surface mount Package form: GW, RGW, yoke, axial
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TEMT1000,
TEMT1020,
TEMT1030,
TEMT1040
TEMT1000
TEMT1020
TSML1000
J-STD-020
2002/95/EC
2002/96/EC
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c 565-2
Abstract: 3X050-10-7 2X03-X-X
Text: Pulse-FEE A T E C H N I T R O L C O M P A N Y FE 2 X Series Current compensated Noise Supression Chokes Inductances compensées d'antiparasitage Key Features Electrical spe cificatio n a t 25°C L±30% mH Caractéristiques Basic Part N o 3,3 6,8 10 15 18
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FE2X03
FE2X07
FE2X10
FE2X15
FE2X18
FE2X27
FE2X39
FE2X47
PF500
c 565-2
3X050-10-7
2X03-X-X
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CD4022A
Abstract: CD4001A
Text: CD4022A Types CMOS Divide-By-8 Counter/Divider With 8 Decoded Outputs The R C A^C D 4022A types consist o f a 4stage divide-by-8 Johnson counter, associ ate decode o u tp u t gating and a C A R R Y OUT BIT. The counter is cleared to its zero c o u n t by a high RESET signal. The counter
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CD4022A
16-lead
RCA-CD4022A
CD4001A
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S0700KC17Y
Abstract: S0500KC25D S0700KC17D GTO thyristor WESTCODE H0700KC17D s0700kc S0500KC20Y G1500N G2000VC250 H0700KC17Y
Text: A broad range of high specification GTO thyristors are available with blocking voltages from 1.7 kV to 6 kV and controllable current ratings to 4000A. O ur GTO th yristo r p o rtfo lio in co rp o ra te s a range o f ad van ced te c h n o lo g ie s such as flo a tin g silicon, buffer layer, fin e geom etry,
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D-68623
S0700KC17Y
S0500KC25D
S0700KC17D
GTO thyristor WESTCODE
H0700KC17D
s0700kc
S0500KC20Y
G1500N
G2000VC250
H0700KC17Y
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3000 watts audio amplifier
Abstract: No abstract text available
Text: Ra dio Freq uency P o w e r Am plifier: M o d u la to r M A X I M U M R A T IN G S A N D T Y P IC A L ^ l ll ll ll ll ll ll ll l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l ^
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891-AMPEREX
3000 watts audio amplifier
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st 9935
Abstract: A9935 HPMA-9986 and/ic 9935 a 8 pin
Text: T tip l HEW LETT wL'KM P A C K A R D I Silicon Bipolar Monolithic Amplifiers HPM A-9900 H PM A -9935 HPM A-9970 HPM A-9985 HPM A-9986 Technical D ata F ea tu re s H PM A -9900 • 15.6 d B O p e n L o o p G a in T y p ic a l a t 1 G H z • 14.6 dB m P jjjg T y p ic a l a t
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5091-1828E
st 9935
A9935
HPMA-9986
and/ic 9935 a 8 pin
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RCA 40251
Abstract: 2N3055H 2N3055H RCA 2n6254 2N6253 2N6371 40251 2N637 2N6371 RCA rca 2n6254
Text: SEMELAB y i ï i l Sb' POWER T R A N S IS T O R S 2N3055H, 2N 6253, 2N 6254, 2N6371, 40251 H om etaxial*Base High-Power Silicon N-P-N Transistors • 2 N 6 2 5 4 : premium type from 2N3055H family Rugged, Broadly Applicable Devices For Industrial and Commercial Use
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2N3055H,
2N6253,
2N6254,
2N6371,
2N3055H
2N6253
2N6251
RCA 40251
2N3055H RCA
2n6254
2N6371
40251
2N637
2N6371 RCA
rca 2n6254
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7z mosfet
Abstract: No abstract text available
Text: S P E C I F I C A T I O N DEVICE NAME TYPE NAME : P o w e r M O S F E T Z S K 2 6 4 6 — 01 SPEC. No. F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric CoJLicL DRAWN CHECKE Y 0257-R-004a
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0257-R-Ã
2SK2646-0
TCI-220
Dpu19Â
7z mosfet
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3000w power amplifier Circuit
Abstract: 3000w amplifier 15005AB QY5-3000A 85712 K713 2X40 20LA20A
Text: R.F. P O W ER T ET R O D E QY5-3000A High-power forced air-cooled tetrode, rated for a maximum anode dissipation o f 3 kW . Primarily intended for use in V.H .F. television transmitters. P R E L I M IN A R Y DATA This data should be read in conjunction w ith “ O perating Notes Part 1— Power
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QY5-3000A
ei-82
QY5-3000A
QY5-3000W
3000w power amplifier Circuit
3000w amplifier
15005AB
85712
K713
2X40
20LA20A
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ica 700 Y
Abstract: ica 700 to61 PG1400 PG1401 PG1402 PG1403 PG1404 PG1405 PG1406
Text: ¿'•¡si • Linear hFE from 50 mA to 20 amps • High frequency ft = 40 MHz typical Low saturation voltage at maximum collector current • High voltage, BVCeo(.»o to 90 volts . . — J .v -y r h FE hFE I ; ; ! ; s ! I i ! NPN T ype Package BVcbo b v CEO (sus)
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PG1400
PG1401
PG1402
PG1413
PG1414
PG1415
PG1416
PG1417
PG1418
PG1419
ica 700 Y
ica 700
to61
PG1403
PG1404
PG1405
PG1406
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HPMA-0335
Abstract: HPMA-0311 HPMA-0300 HPMA-0370
Text: A m p lifie r s VJ HEWLETT PACKARD Silicon Bipolar Monolithic Amplifiers Technical Data F eatu res HPMA-0300 • 3 dB B an d w id th : DC to 2.8 GHz • 12.0 dB G ain a t 1 GHz • U n co n d itio n ally S table (k >1 • C ascadab le 50 O hm G ain B lock
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HPMA-0300
HPMA-0311
HPMA-0335
HPMA-0370
HPMA-0300
HPMA-0311
HPMA-0335/HPMA-0370
HPMA-0370.
HPMA-0370
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monsanto LED
Abstract: Monsanto MV5054-1 MV5054-2 MV5054-3 MV5050 MV5051 MV5052 MV5053 MV5055
Text: 1-4 LED V isib le Lam ps C o n t’d Max F orw a rd C u rre n t mA 100 T yp ica l Lum inous in te n s ity m cd T yp ica l F o rw a rd V olta ge @ Ip = 20 mA V Data Sheet Page No. 2.0 @ 20 mA 1.7 2-25 D evice No. Lens C h a ra c te ris tic MV5050 Clear Point Source
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MV5050
MV5051
MV5052
MV5053
MV5054-1
MV5054-2
MV5054-3
MV5055
MV5056
MV5152
monsanto LED
Monsanto
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Untitled
Abstract: No abstract text available
Text: ES3AB thru ES3MB CbvriSEMT^ — m i n c 3.0 Amps. Super Fast Surface Mount Rectifiers Voltage Range 50 to 1000 Volts Forward Current 3.0 Amperes 5YNSEMI SEMICONDUCTOR Features ♦ ♦ ♦ ♦ ♦ ♦ G la ss p a s s iv a te d chip S u p e r fa s t s w itch in g for high e ffic ie n c y
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DO-214AA
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mje520
Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50
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BD433
MJE200
MJE520
BD435
2N4921
2IM5190
2IM6037
MJE521
MJE180
BD135
SGS1F444
SGSD00030
e13008
BUT23
2m3771
BUT62
BUW42AP
2n5337
BUW32AP
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MV5253
Abstract: MV5352 MV5056 MV5252 MV5050 MV5051 MV5052 MV5053 MV5054-1 MV5054-2
Text: 1-4 LED V isib le Lam ps C o n t’d Max F orw a rd C u rre n t mA 100 T yp ica l Lum inous in te n s ity m cd T yp ica l F o rw a rd V olta ge @ Ip = 20 mA V Data Sheet Page No. 2.0 @ 20 mA 1.7 2-25 D evice No. Lens C h a ra c te ris tic MV5050 Clear Point Source
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MV5050
MV5051
MV5052
MV5053
MV5054-1
MV5054-2
MV5054-3
MV5055
MV5056
MV5152
MV5253
MV5352
MV5252
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PC4560
Abstract: No abstract text available
Text: SEC /uPC4560 DUAL HIGH-PERFORMANCE OPERATIONAL AM PLIFIER NEC Electronics Inc. D escrip tio n Pin C o n fig u ra tio n T he //PC4560 is a dual o p e ra tio n a l a m p lifie r w ith im proved slew rate and g a in -b a n d w id th p ro d u ct when c o m pared to the yuPC4559 w ith u n ity gain freq u e n cy
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/uPC4560
//PC4560
yuPC4559
PC4560
83-002181B
PC4560
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Untitled
Abstract: No abstract text available
Text: MODELS IM-2A-ER and IM-2B-ER Inductors M ilitary/Established Reliability MIL-C-39010 Qualified, M 39010/08/09 FE A T U R E S MIL-C-39010/08 Phenolic Core MIL-C-39010/09 (Iron Core) ELE C T R IC A L S P E C IF IC A T IO N S D E N S IT Y S P E C IF IC A T IO N S
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MIL-C-39010
MIL-C-39010/08
MIL-C-39010/09
MIL-C-39010.
M39010
MIL-C-39010
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MV5056
Abstract: TIL209A MV5054-2 MV5050 MV5051 MV5052 MV5053 MV5054-1 MV5054-3 MV5055
Text: 1-4 LED V isib le Lam ps C o n t’d Max F orw a rd C u rre n t mA 100 T yp ica l Lum inous in te n s ity m cd T yp ica l F o rw a rd V olta ge @ Ip = 20 mA V Data Sheet Page No. 2.0 @ 20 mA 1.7 2-25 D evice No. Lens C h a ra c te ris tic MV5050 Clear Point Source
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MV5050
MV5051
MV5052
MV5053
MV5054-1
MV5054-2
MV5054-3
MV5055
MV5056
MV5152
TIL209A
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ci 94vo
Abstract: cc 156g 155G HER158G er151
Text: HER151G - HER158G T A IW A N S E M IC O N D U C T O R s 1.5 A M P S . G ia s s P a s s iv a t e d H ig h E f f ic ie n t R e c t ifie r s RoHS D O -15 CO M PLIANCE Features ❖ -Y•> «fr❖ -Y- <&■ •J£2jM i T W & ZJ DA G la s s p a s s iv a te d c h ip j u n o tio n .
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ER151G
HER158G
DO-15
DO-15
MIL-STD-202,
10mni
ci 94vo
cc 156g
155G
HER158G
er151
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