2N5417
Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
2N5417
A 14U
UD3008
2N5292
BD263
BD264A
CI44
transistor t05
BC412
KIS434
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MM4048
Abstract: BC406 L17D D29A10 D29A12 D29A7 D29A8 D29A9 MA7809 SA2255
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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/AT-10uV/deg
SA2720*
SA2721
SA2722*
SA2723*
SA2724*
/AT-10uV/dea
MM4048
BC406
L17D
D29A10
D29A12
D29A7
D29A8
D29A9
MA7809
SA2255
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U22 2.5A 250V
Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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NPN110.
THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
U22 2.5A 250V
P1028
K1502
FSP400
BFX82
2N3379
C621
MT101B
TIX882
c644
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PNP transistor A705
Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
PNP transistor A705
2N1620
2sc768
2N1619
UD3008
BD264
MHT6414
SOT1156
MHT6311
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2N4241
Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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NPN110.
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
2N4241
OC74
CM601
2N4042
BSV39
2N3523
bc143
BC222 TRANSISTOR
ft06
200S
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BC507
Abstract: l18b 5.1 channel producing ic BC180 bc507 transistor TIS107 ME60 PET1075 PET1075A PET6003
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
BC507
l18b
5.1 channel producing ic
BC180
bc507 transistor
TIS107
ME60
PET1075
PET1075A
PET6003
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BF125
Abstract: PET8002 l18b GW 9n BFW74 BFW75 BFW76 BFX53 T046 ML101A
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
BF125
PET8002
l18b
GW 9n
BFW74
BFW75
BFW76
BFX53
T046
ML101A
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2SC1803
Abstract: 2sc1949 VE18
Text: 2SC1803, 1949 2SC1803, 1949 N P N l t 74 0 n j& ifciB , VHF b 7 > i s 7 . 9 , NPN SILICON E P IT A X IA L TR A N SISTO R ./M icro w ave A m p lifier, VHF Low Noise Am plifier I f t l J R f f l /Industrial Use If ^ F E A T U R E S L in e a r p o w e r o u tp u t.
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2SC1803,
200MHz.
2SC1803
2sci94Â
2SC15M9
2SC1803
2SC1949
Ve-20V,
2sc1949
VE18
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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2N3405
Abstract: transistors equivalent AP 3706 P mps3702 MPS3704 equivalent T0-92B transistors mps3704 2N3404 2n3402
Text: 2N3702 trough 2N 3706 MPS 3702 through MPS 3706 I PNP . NPN SILICON GENERAL PURPOSE AP TRANSISTORS THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AP MEDIUM POWER APPLICATIONS. THE 2N3702 SERIES ARE SUPPLIED IN CASE TO-92B. THE MPS3702 SERIES ARE SUPPLIED IN
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2N3702
O-92B.
MPS3702
T0-92A.
T0-92B
T0-92A
2N/MPS3702
2N/MPS3703
360mW
2N3405
transistors equivalent
AP 3706 P
MPS3704 equivalent
T0-92B
transistors mps3704
2N3404
2n3402
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Untitled
Abstract: No abstract text available
Text: 45E D • ^ 0 ^ 7 2 5 0 DDlVflbl 2 TOSHIBA TRANSISTOR T0S4 - MPS2907A SILICON PNP EPITAXIAL TYPE PCT PROCESS TO SHIBA (DISCRETE/OPTO) FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUTRY. FEATURES : . High DC Current Gain Specified : -0.1- 500mA
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MPS2907A
500mA
Ic--50mA,
fT-200MHz
MPS2222A.
Ta-25
IB30V,
-150mA
-15mA
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Y220b
Abstract: 2N3836 BD264 BD263 BD264A NS9726 BD265 UD3008 2N3837 2N5417
Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
2N3836
BD264
BD263
BD264A
NS9726
UD3008
2N3837
2N5417
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MA7809
Abstract: 2S711 SA2713 L17D STL51 BC412 KIS434 NS435 NS436 NS437
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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/AT-10uV/deg
SA2720*
SA2721
SA2722*
SA2723*
SA2724*
/AT-10uV/dea
MA7809
2S711
SA2713
L17D
STL51
BC412
KIS434
NS435
NS436
NS437
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2n2709
Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
TIX882
2n2709
C621
2N4411
c643
OC44
400M
BSV55AP
BSV55P
T072
GM300
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tea 1601 t
Abstract: l18b PT23 tea 1601 UD3008 2N2719 ME2001
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BD264
Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C
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2 watt audio amplifier
Abstract: CL155 CL166 IC-100 T092A
Text: 4 THE CL155 PNP AND CL166 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED TOR 2-WATT AUDIO AMPLIFIER OUTPUT AND SWITCHING APPLICATIONS. THEY FEATURE LOW COLLECTOR-EMITTER KNEE VOLTAGE AND GOOD LINEARITY OF D.C. CURRENT GAIN. ABSOLUTE MAXIMUM RATINGS
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CL155
CL166
t450mS)
T0-92A
625mW
TA-25Â
IC-50mA
180-36O
2 watt audio amplifier
CL155
CL166
IC-100
T092A
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T0-92B
Abstract: transistors equivalent 2N3702 2N3404 2N5450 MPS3704 equivalent 2N5355 2n EQUIVALENT MPS3702 2N5221 equivalent
Text: 2N3702 MPS 3702 2 N 3706 MPS 3706 rough through PNP . KPN SILICON GENERAL PURPOSE AF TRANSISTORS • i . VT. r 4 - - T f " 7 • ! ‘ T- • • ^-y-XV" -ai. ^ V — r ^ - T K ; •‘ ’V ’ '' M . A I J" CASE T0-92B THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL
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t0-92b
t0-92a
2N3702
T0-92B.
MPS5J02
T0-92A.
2n/mps3702
2n/mps3705
2n/mps3706
2N/MP53702
transistors equivalent
2N3404
2N5450
MPS3704 equivalent
2N5355
2n EQUIVALENT
MPS3702
2N5221 equivalent
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028A5
Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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C621
Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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18200T
Abstract: germanium low power 150mW 460MSA 2N2097A C621 LM 18200T P1004 RT1116 2SC814 transistor C633
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
TIX882
18200T
germanium low power 150mW
460MSA
2N2097A
C621
LM 18200T
P1004
RT1116
2SC814
transistor C633
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80 amp 30v npn darlington
Abstract: UD3008 transistor 2sc115 bd107a BD265A A515 B3570 B3571 BD106 HFE-10
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
80 amp 30v npn darlington
UD3008
transistor 2sc115
bd107a
A515
B3570
B3571
BD106
HFE-10
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GM300
Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
GM300
CM602
ft06
transistor C633
FSP400
2n1763
C621
DA402
2N2458
transistor c640 npn
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Untitled
Abstract: No abstract text available
Text: _ Si-Cr THIN FILM RESISTORS VALUES OF 10Q to 100Kfi, LASER TRIMMABLE * FEATURES Wide Range of Resistor Values Negligible Voltage Dependence Very Low Temperature Coefficient Very High Breakdown Voltage Good Matching Characteristics Very Low Temperature Drift Matching
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100Kfi,
T-42-21
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