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    IC MOSFET QG 6 PIN Search Results

    IC MOSFET QG 6 PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IC MOSFET QG 6 PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF7807VPbF-1 HEXFET Power MOSFET VDS 30 RDS on max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) V 25 mΩ 9.5 nC 8.3 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 T o p V ie w Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques


    Original     		PDF IRF7807VPbF-1 IRF7807VTRPbF-1 TD-020D

    Untitled

    Abstract: No abstract text available
    Text: IRF8910PbF-1 HEXFET Power MOSFET VDS 20 RDS on max V 13.4 (@VGS = 10V) mΩ RDS(on) max 18.3 (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 7.4 nC 10 A S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package


    Original     		PDF IRF8910PbF-1 TD-020D

    motor driver ic 7324

    Abstract: UCCx7324 parallel mosfet UCC27324 UCCx7325 UCC37324 SLUP133 UCCx7323 15-V UCC27323
    Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492A – DECEMBER 2001 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D D D D D D Miller Plateau Region


    Original     		PDF UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492A 20-ns 15-ns motor driver ic 7324 UCCx7324 parallel mosfet UCC27324 UCCx7325 UCC37324 SLUP133 UCCx7323 15-V UCC27323

    Untitled

    Abstract: No abstract text available
    Text: IRF8113PbF-1 HEXFET Power MOSFET VDS 30 RDS on max V 5.6 (@VGS = 10V) mΩ RDS(on) max 6.8 (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 24 nC 17.2 A A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package


    Original     		PDF IRF8113PbF-1 IRF8113pper TD-020D

    SLUS492B

    Abstract: UCC27323D UCC27324 UCC27325 UCC37323 UCC37324 UCC37325 UCC27323 15-V POWER MOSFET
    Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B – JUNE 2001 – REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D


    Original     		PDF UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B 20-ns 15-ns SLUS492B UCC27323D UCC27324 UCC27325 UCC37323 UCC37324 UCC37325 UCC27323 15-V POWER MOSFET

    Untitled

    Abstract: No abstract text available
    Text: IRF7205PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 0.07 Ω 0.13 Ω 27 nC -4.6 A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package


    Original     		PDF IRF7205PbF-1 D-020D

    Untitled

    Abstract: No abstract text available
    Text: IRF7103PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 50 V 0.13 Ω 0.20 Ω 12 nC 3.0 A S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package


    Original     		PDF IRF7103PbF-1 TD-020D

    15-V

    Abstract: UCC27323 UCC27323D UCC27324 UCC27325 UCC37323 UCC37324 UCC37325 UCC37324 equivalent POWER MOSFET
    Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D


    Original     		PDF UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B 20-ns 15-ns 15-V UCC27323 UCC27323D UCC27324 UCC27325 UCC37323 UCC37324 UCC37325 UCC37324 equivalent POWER MOSFET

    Untitled

    Abstract: No abstract text available
    Text: IRF7809AVPbF-1 HEXFET Power MOSFET DEVICE CHARACTERISTICS… IRF7809AV RDS on 7.0mΩ QG 41nC Qsw 14nC Qoss 30nC 1 8 S 2 7 D S 3 6 D G 4 5 D Top View SO-8 Features A A D S Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques


    Original     		PDF IRF7809AVPbF-1 IRF7809AV IRF7809AVTRPbF-1 D-020D

    Untitled

    Abstract: No abstract text available
    Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D


    Original     		PDF UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B 20-ns 15-ns

    Untitled

    Abstract: No abstract text available
    Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D


    Original     		PDF UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B 20-ns 15-ns

    TEXAS INSTRUMENT N PACKAGE DIMENSION

    Abstract: No abstract text available
    Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B – JUNE 2001 – REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D


    Original     		PDF UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B 20-ns 15-ns TEXAS INSTRUMENT N PACKAGE DIMENSION

    UCCx7323

    Abstract: No abstract text available
    Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D


    Original     		PDF UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B 20-ns 15-ns UCCx7323

    UCC27324

    Abstract: No abstract text available
    Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D


    Original     		PDF UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B 20-ns 15-ns UCC27324

    M3481

    Abstract: TSM3481CX6
    Text: E TAIWAN TSM3481 S E M IC O N D U C T O R 30V P-Channei MOSFET pb RoHS CO M PLIANCE SOT-26 PRODUCT SUM M ARY Pin D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source S54 R Ds(on)(m Q ) b (A) 48 @ VCS = -10V -5.3 79 @ VGS = -4.5V -4.1 V DS (V )


    OCR Scan     		PDF M3481 OT-26 TSM3481CX6 OT-26 M3481

    TSM3460CX6

    Abstract: 4300 MOSFET s54 mo TSM3460
    Text: E TAIWAN TSM3460 S E M IC O N D U C T O R 20V N-Channel MOSFET w/ESD Protected pb RoHS CO M PLIANCE PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate V DS (V) 4. Source 20 1 23 Features R osanna) Id ( A ) 22 @ Vos = 4 .5 V 6 40 @ V g* = 2.5V


    OCR Scan     		PDF TSM3460 OT-26 TSM3460CX6 OT-26 4300 MOSFET s54 mo TSM3460

    55n03

    Abstract: marking 1AJ MOSFET 55N03 TSM55N03
    Text: s TAIWAN TSM55N03 S E M IC O N D U C T O R 25V N-Channel MOSFET pb RoHS C O M P L IA N C E TO-252 PRODUCT SUM M ARY Pin Definition: 1. Gate V o s (V ) 2. Drain 3. Source /Ù 7 f T O %T x, 25 R os^m O ) I d (A ) 6 @ Vc s = 1ÛV 30 9 @ V<;s z 4.5V 30 1 2~3


    OCR Scan     		PDF TSM55N03 O-252 TSM55NÃ O-252 55n03 marking 1AJ MOSFET 55N03 TSM55N03

    TSM4410

    Abstract: TSM4410CS D0351
    Text: s TAIWAN TSM4410 S E M IC O N D U C T O R 25V N-Channei MOSFET pb RoHS CO M PLIANCE SOP-8 PRODUCT SUM M AR Y Pin Definition; 1. S ou rce 2. S ou rce 3. S ou rce V DS (V) 4. Gate R o s ic a m o ) Id (A) 1 5 V c s = 10V 10 21 @ V {^ = 4 . 5 V 8 25 5. 6, 7, 8. Drain


    OCR Scan     		PDF TSM4410 TSM4410CS TSM4410 D0351

    mosfet low vgs

    Abstract: I1020
    Text: v G en eral S e m ic o n d u c t o r # _ GF6968E Battery Switch, ESD Protected Common-Drain Dual N-Channel MOSFET Low VGS th Vds 20V RdS(ON) 22mQ Id6.5A DO Pin 1 = 0 Pin 2 = Si Pin 3 = Si Pin 4 = Gì Pin 5 = G 2 Pin 6 = S2 Pin 7 = S2 Pin 8 = D


    OCR Scan     		PDF GF6968E MIL-STD-750, mosfet low vgs I1020

    MOSFET 4466

    Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES


    OCR Scan     		PDF BF1102 OT363 BF1102 MOSFET 4466 4466 8 pin mosfet pin voltage 4466 mosfet

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ6436DQ Semiconductors N-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) r DS(on) (£2) 30 0.045 @ VGs = 10 V 0.070 @ VGS = 4.5 V I d (A) ±4.4 ±3.5 TSSOP-8 Dd S [T sd G IT • SÌ6436DQ ~H D T ]S TI S T ]d O- G JE * Source Pins 2, 3, 6 and 7


    OCR Scan     		PDF 6436DQ S-49534--Rev. 6-Oct-97 ct-97

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ6426DQ Semiconductors N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS(V) rDS(on) (Q) 0.035 @ VGs = 4.5 V 0.04 @ VGS = 2.5 V 20 I d (A) ±5.4 ±4.9 D Q TSSOP-8 Ò s* *Source Pins 2, 3. 6, and 7 must be tied common. TSSOP-8 Top View N-Channel MOSFET


    OCR Scan     		PDF 6426DQ S-49534--Rev. Q6-Oct-97 -Oct-97

    TSM3433

    Abstract: MARKING ato
    Text: E TAIWAN TSM3433 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 V DS (V) Pin D e fin itio n : 854 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features RDS(on)<mÛ) Id (A) 42 @ V GS = -4.5V


    OCR Scan     		PDF TSM3433 TSM3433CX6 OT-26 TSM3433 MARKING ato

    tsc 3001

    Abstract: RF power mosfet marking K5 SOT-26 ci TSM3457 K5 marking code diode single P-Channel mosfet sot-26 marking AAW
    Text: $ TAIW AN TSM3457 S E M IC O N D U C T O R 30V P-Channei MOSFET pb RoHS CO M PLIANCE S O T-26 854 PRODUCT SUMMARY Pin D efinition: 1. Drain 6. Drain 2. D rain 5. Drain 3. Gate 4. Source Vos (V) R DS( c n ) ( m ü ) b (A) 60 @ v {;s= 10V -5 100 @ V GS= 4.5V


    OCR Scan     		PDF TSM3457 OT-26 TSM3457CX6 tsc 3001 RF power mosfet marking K5 SOT-26 ci TSM3457 K5 marking code diode single P-Channel mosfet sot-26 marking AAW