Untitled
Abstract: No abstract text available
Text: BC847B Transistors NPN General Purpose Transistor BC847B Features 1 BVCEO < 45V IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 Packaging type SST3 Marking G1F Code T116 Basic ordering unit (pieces) 3000
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BC847B
BC857B.
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hall sensor 525k
Abstract: 525k hall hall effect sensor ignition
Text: MICRONAS INTERMETALL HAL525 Hall Effect Sensor IC MICRONAS Edition March April 4,10, 1996 1999 6251-365-1DS 6251-465-2DS HAL525 Contents Page Section Title 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. Introduction Features Marking Code Operating Junction Temperature Range
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HAL525
6251-365-1DS
6251-465-2DS
HAL525
hall sensor 525k
525k hall
hall effect sensor ignition
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HALL Sensor TO92UA
Abstract: 525k hall sensor 525k
Text: MICRONAS Edition Aug. 30, 2000 6251-465-3DS HAL525, HAL535 Hall Effect Sensor IC MICRONAS HAL525, HAL535 Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range
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6251-465-3DS
HAL525,
HAL535
HAL525
HALL Sensor TO92UA
525k
hall sensor 525k
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PDF
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SMD Hall sensors code C
Abstract: 525E 4 Pin SMD Hall sensors 4 lead SMD Hall sensors SMD Hall C smd hall sensor SMD Hall sensors SMD Hall sensors code TRANSISTOR SMD MARKING CODE 42 HAL525
Text: MICRONAS Edition Aug. 30, 2000 6251-465-3DS HAL525, HAL535 Hall Effect Sensor IC MICRONAS HAL525, HAL535 Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range
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Original
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6251-465-3DS
HAL525,
HAL535
HAL525
OT-89A
SPGS0022-5-A3/2E
SMD Hall sensors code C
525E
4 Pin SMD Hall sensors
4 lead SMD Hall sensors
SMD Hall C
smd hall sensor
SMD Hall sensors
SMD Hall sensors code
TRANSISTOR SMD MARKING CODE 42
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PDF
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101W1200EH
Abstract: D434
Text: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive
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101W1200EH
MIXA101W1200EH
E72873
Uninter1200
20110715a
101W1200EH
D434
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PDF
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Untitled
Abstract: No abstract text available
Text: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 T3 10 6 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive
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101W1200EH
MIXA101W1200EH
E72873
20110715a
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PDF
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D6 TRANSISTOR MARKING
Abstract: No abstract text available
Text: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 T3 10 6 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: + • SPT IGBT technology • low saturation voltage
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101W1200EH
MIEB101W1200EH
E72873
20110511a
D6 TRANSISTOR MARKING
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PDF
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MIEB101W1200EH
Abstract: 101W1200EH
Text: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • SPT IGBT technology
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101W1200EH
MIEB101W1200EH
E72873
20110511a
MIEB101W1200EH
101W1200EH
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PDF
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Untitled
Abstract: No abstract text available
Text: MIEB 101H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 D1 1 T1 D2 9 T2 10 2 19 E72873 15 D3 3 T3 D4 11 T4 12 4 14, 20 Features: + • SPT IGBT technology • low saturation voltage
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101H1200EH
MIEB101H1200EH
E72873
S1600
20110615a
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PDF
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Untitled
Abstract: No abstract text available
Text: MIEB 101H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 1 T1 D1 D2 9 T2 10 2 19 E72873 15 D3 3 T3 D4 11 T4 12 4 14, 20 Features: Application: Package: • SPT IGBT technology • low saturation voltage
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101H1200EH
MIEB101H1200EH
E72873
20110615a
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PDF
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PMBT3904M,315
Abstract: marking code 6p smd transistor 6p smd marking code 6p
Text: PMBT3904M 40 V, 200 mA NPN switching transistor Rev. 01 — 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 SC-101 leadless ultra small Surface-Mounted Device (SMD) plastic package.
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PMBT3904M
OT883
SC-101)
PMBT3906M.
PMBT3904M
771-PMBT3904M315
PMBT3904M,315
marking code 6p
smd transistor 6p
smd marking code 6p
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PDF
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transistor smd code marking 101
Abstract: sc-101 TRANSISTOR SMD MARKING CODES PMBT3904M MARKING CODE SMD IC
Text: PMBT3904M 40 V, 200 mA NPN switching transistor Rev. 01 — 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 SC-101 leadless ultra small Surface-Mounted Device (SMD) plastic package.
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PMBT3904M
OT883
SC-101)
PMBT3906M.
PMBT3904M
transistor smd code marking 101
sc-101
TRANSISTOR SMD MARKING CODES
MARKING CODE SMD IC
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PDF
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sym013
Abstract: smd transistor 6q
Text: PMBT3906M 40 V, 200 mA PNP switching transistor Rev. 01 — 22 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description PNP single switching transistor in a SOT883 SC-101 leadless ultra small Surface-Mounted Device (SMD) plastic package.
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PMBT3906M
OT883
SC-101)
PMBT3904M.
AEC-Q101
PMBT3906M
771-PMBT3906M315
sym013
smd transistor 6q
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PDF
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SC-101
Abstract: MARKING CODE SMD IC
Text: PMBT3906M 40 V, 200 mA PNP switching transistor Rev. 01 — 22 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description PNP single switching transistor in a SOT883 SC-101 leadless ultra small Surface-Mounted Device (SMD) plastic package.
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PMBT3906M
OT883
SC-101)
PMBT3904M.
AEC-Q101
PMBT3906M
SC-101
MARKING CODE SMD IC
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PDF
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4N33 APPLICATION NOTE
Abstract: No abstract text available
Text: 4N32, 4N33 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E • Very high current transfer ratio, 500 % min. • High isolation resistance, 1011 typical • Standard plastic DIP package
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2002/95/EC
2002/96/EC
i179005
i179005
UL1577,
E52744
IEC60950;
IEC60065
11-Mar-11
4N33 APPLICATION NOTE
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4n33 OPTOCOUPLER
Abstract: SMD MARKING CODE 3306 smd optocoupler marking smd optocoupler marking 1 optocoupler 4n33 Infrared Temperature Sensor dip-6 4N32-X007 4N33-X009 Vishay 4N32 X017
Text: 4N32, 4N33 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E • Very high current transfer ratio, 500 % min. • High isolation resistance, 1011 Ω typical • Standard plastic DIP package
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i179005
2002/95/EC
2002/96/EC
i179005
UL1577,
E52744
18-Jul-08
4n33 OPTOCOUPLER
SMD MARKING CODE 3306
smd optocoupler marking
smd optocoupler marking 1
optocoupler 4n33
Infrared Temperature Sensor dip-6
4N32-X007
4N33-X009
Vishay 4N32
X017
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PDF
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SMD MARKING CODE 3306
Abstract: 4n33 smd 4n33 OPTOCOUPLER
Text: 4N32, 4N33 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E • Very high current transfer ratio, 500 % min. • High isolation resistance, 1011 typical • Standard plastic DIP package
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Original
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2002/95/EC
2002/96/EC
i179005
i179005
UL1577,
E52744
IEC60950;
IEC60065
2011/65/EU
2002/95/EC.
SMD MARKING CODE 3306
4n33 smd
4n33 OPTOCOUPLER
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PDF
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Untitled
Abstract: No abstract text available
Text: 4N32, 4N33 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E • Very high current transfer ratio, 500 % min. • High isolation resistance, 1011 typical • Standard plastic DIP package
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Original
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2002/95/EC
2002/96/EC
i179005
i179005
UL1577,
E52744
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: 4N32, 4N33 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E • Very high current transfer ratio, 500 % min. • High isolation resistance, 1011 typical • Standard plastic DIP package
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Original
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2002/95/EC
2002/96/EC
i179005
i179005
UL1577,
E52744
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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hi1016
Abstract: No abstract text available
Text: Visit Us On The Web SURGE www.surgecomponents.com C om p o n en ts Inc. hl 1016 G ra n d Boulevard D e e r Park, N Y 11729 • 631 595-1818 • SC M Series FAX: 631 595-1283 MULTILAYER CERAMIC CHIP CAPACITOR FEATURES: □ □ □ □ □ Miniature Size Wide Capacitance, TC and Voltage Range
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PDF
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CL-21 capacitor
Abstract: z5u .05 PA 4013 cl31f1 K20xC
Text: SURGE Components, Inc. 1016 Grand Boulevard Deer Park, NY 11729 • 631595-1818 • FAX: 631 595-1283 SCM Series MULTILAYER CERAMIC CHIP CAPACITOR FEATURES: □ Miniature Size □ W ide Capacitance, T C and Voltage Range □ Highly Reliable Performance □ Industry Standard Size
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PDF
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Untitled
Abstract: No abstract text available
Text: 346 MONROE AVENUE • BOX 142 • KENILWORTH, N.J. 07033 • PHONE 908 272-9262 • FAX (908) 272-7630 E-M AIL: VENTRONICS @ PRODIGY . NET W W W .VENTRONICSINC.COM CHIP CERAMIC CAPACITORS STANDARD SMT CHIP P/N BREAKDOWN 1206 N 472 J 101 N X050 H T M Marking
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: T H IR D AN GLE P R O JE C T IO N I T E M CODE E C Q E 10102 U 10122( n 10152( 1/ 10 18 2 { u 10 2 2 2 { u 10272( // 10 3 3 2 ( // 10 3 9 2 ( // 1 0 4 7 2 ( U 10562( H 10682( u 10 8 2 2 ( // 1 0 1 0 3 ( II 10 1 2 3 C II 101 53 { il 10 183 { Il 10 2 2 3 {
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OCR Scan
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1000VDC)
CT-H-971E
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PDF
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FR10X
Abstract: FR101 FR107
Text: E TAIWAN SEM ICONDUC F R 101 - F R 107 1.0 AMP. Fast Recovery Rectifiers tò R oHS COMPLIANCE 0 -0 4 1 .107 2.7 .K C <2 XI) DIA. 1.0 125/1) MIN. Features ❖ ^ -0^ <>• - High efficiency. Low VF High current capability High reliability Hi gh su rg e cu rrent capabi lity
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FR101
-FR107
DQ-41
MIL-STD-202,
JC/10
FR10X
FR107
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PDF
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