IC tc 2608
Abstract: LZ08 tc 2608
Text: Ordering number : EN5982 Monolithic Digital 1C LB1847 SM lYO l PWM Current Control Type Stepping Motor Driver Overview Package Dimensions The LB 1847 is a driver IC for stepping motors with unit: mm PWM current control bipolar drive fixed OFF 3147B-DIP28H
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EN5982
LB1847
3147B-DIP28H
LB1847]
IC tc 2608
LZ08
tc 2608
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Untitled
Abstract: No abstract text available
Text: GMM7324000BS/SG-60/70/80 LG Semicon Co.,Ltd. Description The G M M 7324000B S /S G is a 4M x 32 bits Dynam ic FLAM M ODUI.Fi w hich is assem bled 32 pieces o f 4M x lb its D R A M s in 20/26 pin SO J package on the printed circuit board. This m odule can be as w ell used as 8M x 16 bits D ynam ic RAM
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GMM7324000BS/SG-60/70/80
7324000B
GMM7324000BS/SG
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wire ul 3135
Abstract: UL 3135 2-1437658
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . REUEASED FO R AUU C O P Y R IG H T By 2 P U B U IC A T IO N R IG H TS REVISIO N S RESERVED. - LTR K4 D E S C R IP T IO N RE VISED .80 PER D ATE ECO-11-004587 MAR11 T .77 r 1 MECHANICAL: RECOMMENDED TORQUE: 20 IN-LB
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IMAR11
UL94V-0,
wire ul 3135
UL 3135
2-1437658
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ic Lb 598 d
Abstract: Lb 598 d FE-1014 BUJ202
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ202AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ202AX
ic Lb 598 d
Lb 598 d
FE-1014
BUJ202
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Untitled
Abstract: No abstract text available
Text: C atalog 2 9 6 0 4 0 Revised 4-99 SSC S ealed S e n s o r C o n n e c to r System One Position Plug Assemblies 15.2 [.598] Material and Finish: H ou sin g G lass-tilled PBT Standard Temp. 125°C Saal R in g — Silicone D o u b le -Lo c k P la te — PBT yellow
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1-B00-522-G752
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
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BUJ103A
O220AB
SCA60
135104/240/02/pp12
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BUJ204A
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
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BUJ204A
O220AB
SCA60
135104/240/02/pp12
BUJ204A
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BUJ103AX
Abstract: BP317 BU1706AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ103AX
SCA60
135104/240/02/pp12
BUJ103AX
BP317
BU1706AX
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BP317
Abstract: BU1706AX BUJ204AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ204AX
SCA60
135104/204/02/pp12
BP317
BU1706AX
BUJ204AX
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smd diode HB
Abstract: BA891 CGY2014ATW HTSSOP20 philips application
Text: INTEGRATED CIRCUITS DATA SHEET CGY2014ATW GSM/DCS/PCS power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Nov 28 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2014ATW FEATURES GENERAL DESCRIPTION
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CGY2014ATW
CGY2014ATW
403506/01/pp12
smd diode HB
BA891
HTSSOP20
philips application
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APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
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AF106
AF106
APC UPS CIRCUIT DIAGRAM rs 1500
APC UPS es 500 CIRCUIT DIAGRAM
APC UPS 650 CIRCUIT DIAGRAM
schematic diagram APC back ups XS 1000
TAA550
APC UPS CIRCUIT DIAGRAM
UPS APC rs 1000 CIRCUIT diagram
UPS APC rs 800 CIRCUIT diagram
APC Back ES 500 UPS circuit diagram
CIRCUIT DIAGRAM APC UPS 700
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C87P
Abstract: BUX87P
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.
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BUX86P
BUX87P
100PD/PD
C87P
BUX87P
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ic Lb 598 d
Abstract: GS121 ic Lb 598 sgs120
Text: S G S-THONSON D7E D I 7 ^ ^ 2 3 7 67C 15347 D 001744_S '7"- T 1 g S Î2 Ô S G S 1 2 5 3 SGSIEI SGSÎ26 1 SGS122 S6S127 EPITAXIAL-BASE NPN/PNP T'33 ~3 l POW ER D A R LIN G T O N S The SGS120, SGS121 and SG S122 are silicon epitaxial-base NPN transistors in monolithic
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SGS122
S6S127
SGS120,
SGS121
OT-82
SGS125,
300fis,
DD174M7
SGSt20
SGSI25
ic Lb 598 d
GS121
ic Lb 598
sgs120
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fca173
Abstract: BA891 Philips DC Power Amplifier 380 CGY2014TT HTSSOP20 Philips DATA Handbook system
Text: INTEGRATED CIRCUITS DATA SHEET CGY2014TT GSM/DCS/PCS power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Apr 11 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2014TT FEATURES GENERAL DESCRIPTION
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CGY2014TT
CGY2014TT
403506/01/pp16
fca173
BA891
Philips DC Power Amplifier 380
HTSSOP20
Philips DATA Handbook system
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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ic Lb 598 d
Abstract: D72F5T1 Lb 598 d 100-C f250300
Text: SURFACE-MOUNT D72F5T1.2 NPN POWER TRANSISTORS 50 VOLTS 5 AMP, 20 WATTS Designed for high current switching applications. Features: • Low Collector Saturation Voltage : VCE sat = 0.4V (M ax.) (at l c = 3A) • High Speed Switching Tim e : tstg = 1-0/us (Typ.)
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D72F5T1
D73F5T
ic Lb 598 d
Lb 598 d
100-C
f250300
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buw44
Abstract: BUW45 ic Lb 598 BUW46
Text: r z 7 SGS-THOMSON ^7# BUW44/BUW45 BUW46 HIGH VOLTAGE, HIGH CURRENT POWER SWITCH DESCRIPTIO N The BUW44, BUW45 and BUW46 are multiepitaxial mesa NPN transistors in Jedec TO-3 metal case intended in fast switching applications for high output powers. TO-3 ABSO LU TE M AXIM UM RATING S
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BUW44/BUW45
BUW46
BUW44,
BUW45
BUW46
7250V
BUW44/BUW45/BUW46
buw44
ic Lb 598
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D 5038 Transistor Horizontal
Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching
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CB-69
14f4g
D 5038 Transistor Horizontal
amplificateur audio a base de transistor
transistor 2n 892 X1
amplificateur BF
transistor ST TYN 616
equivalent of transistor bul 38 da
bd 317 schema
transistor 3055 out hv
ESM214
Transistor bdy 58
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ic Lb 598 d
Abstract: ic Lb 598 TBD CABLE Lb 598 d R129
Text: COAXIAL CDtsMECTGRS ADAPTOR MALE/FEMALE CRIMP TYPE CABLE X-2W R129.721.210 9440 Issue Series Page 1 / 1 : DIN Vl.6-5.6 BO *6 DIA 0.E7I 3C-2W CABLES C H A R A C T E R IS T IC 75 NOMINAL IMPÉDANCE 0-1 FREQUENCY RANGE -55/+155 TEMPERATURE RATING TBO VSWR + VOLTAGE RATING
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opp56
M22520/5-01
M22520/5-13
ic Lb 598 d
ic Lb 598
TBD CABLE
Lb 598 d
R129
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RELAY RZ2
Abstract: hJST RSN 6000 A SL7953 hjst 16 RT-6000 AN82 MV3000 SL376 MV3010
Text: CS.& 3 ^ \3» GEC P L E S S E Y NOVEMBER 1990 P R E L IM IN A R Y IN F O R M A T IO N [SE M IC O N D U C T O R S! SL7953 SUBSCRIBER LINE INTERFACE CIRCUIT The SL7953 is a Subscriber Line Interface C ircuit SLIC for use at the telephone exchange or PABX end of a
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SL7953
SL7953
PS2448
RELAY RZ2
hJST
RSN 6000 A
hjst 16
RT-6000
AN82
MV3000
SL376
MV3010
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UIN2803
Abstract: ULN-28031 uln280x cqgi ULN2823 ULN2800 IC uln2803 tv nei schematics ULN2823A lcd power board schematic lg yp
Text: HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 4ôR ~ U L N 2 SXXLW {> X" 18 U L N 2 SXXA Featuring continuous load Current ratings to 600 mA for each of the sight drivers, the Series U LN 2Q 00A /IW high-voltage, high-current Oarlington arrays are ideally suited for interfacing between low-levet
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uln28xxa
ULN280X*
ULN2823-)
ULN26CQA
ULN28C01W
Current125
MS-013AA
MS-013AA
MS-013AB
MS-013AC
UIN2803
ULN-28031
uln280x
cqgi
ULN2823
ULN2800
IC uln2803
tv nei schematics
ULN2823A
lcd power board schematic lg yp
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ic Lb 598 d
Abstract: ESM6045DV
Text: FZ7 SGS-THOMSON *> 7 # ESM 6045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE
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6045DV
ESM6045DV
ic Lb 598 d
ESM6045DV
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D-621 Connectors Termination Manual
Abstract: No abstract text available
Text: Catalog 1307612 /V IV IF MTA Application Tooling Revised 7-01 T o o lin g O ptions _ . . N o te : M ax. Insulation O u tsid e D ia m e ter Wire: 0 6 0 [ i 52 ] to r m t a 100 c o n n e c to rs 095 2 4 1] to r One-At-A-Time Termination Tooling Part Numbers
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MTA-100
MTA-100
D-621 Connectors Termination Manual
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Untitled
Abstract: No abstract text available
Text: Golden DRAGON with Lens Lead Pb Free Product - RoHS Compliant LD W51M, LB W51M, LT W51M Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss mit ARGUS® Optik • Besonderheit des Bauteils: Lichtquelle mit
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