MS25237
Abstract: MIL-L-3661B LH89 LH76 MIL-L-3661 24-20-41 367-8430-09-503 24184 t-1 midget
Text: SECURE LIGHTING DESIGNED TO MEET REQUIREMENTS OF MIL-L-3661B Used for secure low light level nighttime operation and normal daytime operation. Features • These indicators are designed to meet the Secure Lighting Statement o f Work Priorities instituted by CECOM Communications
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MIL-L-3661B
lens8430-0002-503
LH76/3
MS25237
LH89
LH76
MIL-L-3661
24-20-41
367-8430-09-503
24184
t-1 midget
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LC11GN2
Abstract: LC11BT2 178-0333-500 LC11BN2 LC11RT2 LC11RN2 LC11CN2 MIL-L-3661B MIL-L-6723 178-0331-500
Text: Incandescent Indicators T-1 3/4 M ID G ET FLA N G E BASE TWO T E R M IN A L S - FULLY INSULATED See lamp ratings on page J. FOR MOUNTING IN 15/32" CLEARANCE HOLE M EET OR EXCEED E N V IR O N M E N T A L A N D O P E R A T IO N A L REQ U IREM ENTS OF M IL-L -6 7 2 3 A N D M IL L -3661B.
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LH73/1
LC11RT2
MIL-L-6723
-3661B.
LC11RN2
LC11GN2
LC11YN2
LC11BN2
LC11CN2
LC11BT2
178-0333-500
MIL-L-3661B
178-0331-500
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qml-38535
Abstract: qml38535
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 2 3 PMIC N/A PREPARED BY STANDARDIZED MILITARY DRAWING CHECKED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENT S AND AGENCIES OF THE DEPARTMENT OF DEFENSE
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5962-9094001MRX
SNJ54BCT623J
5962-9094001MSX
SNJ54BCT623W
5962-9094001M2X
SNJ54BCT623FK
qml-38535
qml38535
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ci scl 4001 be
Abstract: No abstract text available
Text: DATA SHEET / MOS INTEGRATED CIRCUIT MC-4516CB64KS, 4516CB64ES 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CB64KS, 4516CB64ES is a 16,777,216 words by 64 bits synchronous dynam ic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM : ^¡PD45128841 are assembled.
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MC-4516CB64KS,
4516CB64ES
64-BIT
MC-4516CB64ES
PD45128841
ci scl 4001 be
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T726
Abstract: 1N914 BDX53 BDX53A BDX53B BDX53C BDX63 BDX63A 60si50 ION-M
Text: T E X A S IN ST R bE -COPTO} D eT| STblVSb DD3thl7 1 _T-33-29_ — g§5T7^~TEXAS~TNSTR 62C 36617 COPTO BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 60 W at 2 5 °C Case Temperature
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T-33-29
BDX53,
BDX53A,
BDX53B,
BDX53C
T0-220AB
BDX63
BDX63A
BDX53B
BDX53C
T726
1N914
BDX53
BDX53A
60si50
ION-M
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PDF
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STR w 6053 n
Abstract: STR w 6053 S STR 6053 n STR 6053 PC-620 protech str w 6053 S277-7 STR 6053 S
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North East North Central Northwest 20 M all Road S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 FAX: (617) 2 7 3 -9 3 63 901 W a rre n v ille R oad S u ite 120 Lisie, IL 6053 2 -13 5 9 (708) 852-2011 FAX: (708) 852-3096
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SEMIC503)
STR w 6053 n
STR w 6053 S
STR 6053 n
STR 6053
PC-620 protech
str w 6053
S277-7
STR 6053 S
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PDF
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MS25041
Abstract: MS25041-7 MS25041-1 MS25041-4 MS25041-3 MS25041-8 MS25041-2 MIL-L-7961B MS25041-10 800033-1
Text: S u b -M in ia tu r e In c a n d e s c e n t P R E S S - T O - T E S T In d ic a to rs M IL IT A R Y S T A N D A R D D RAW ING MS25041 - 1 to 11 For back of panel mounting in 15/32" clearance hole Meet or exceed requirements of M IL —L —7961B and M IL —L —3661
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MS25041
7961B
S25041-6
MS25041-7
MS25041-8
MS25041-1
MS25041-4
MS25041-3
MS25041-2
MIL-L-7961B
MS25041-10
800033-1
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PDF
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13A 648
Abstract: HLMP-0103
Text: lÜ P J k • i integrated nesistor Lamps 5 Volt and 12 Volt in T-l and T-l3/* Packages HLMP- 1100 , HLMP- 1120 HLMP- 1600, HLMP- 1601 HLMP- 1620, HLMP- 1621 HLMP- 1640* HLMP- 1641 TTT H T D 0 1 A ÍT T1JT “ O i U U . J .X J U L T J X •3112 HLMP- 3600, HLMP- 3601
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Volt/12
T-13A
13A 648
HLMP-0103
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PDF
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V43648Z04VTG 3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 M H Z SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • Using 8M x 8 SDRAMs ■ JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM
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V43648Z04VTG
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSEL V IT E L IC V43648Z0V 3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 M H Z SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • Using 8M x 8 SDRAMs ■ JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM
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V43648Z0V
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V43644Y04VTG 3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM ■ Nonbuffered
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V43644Y04VTG
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSEL V IT E L IC V43648Z04VTG 3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 M H Z SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • Using 8M x 8 SDRAMs ■ JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM
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V43648Z04VTG
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V43648Z0V 3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • Using 8M x 8 SDRAMs ■ JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM
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V43648Z0V
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSEL V IT E L IC V43644Y0V 3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 M H Z SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM ■ Nonbuffered
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V43644Y0V
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Untitled
Abstract: No abstract text available
Text: HYMD18M6456-H/L 8Mx64 DDR Unbuffered SO-DIMM SERIAL PRESENCE DETECT Bin S o r t: K DDR266A@ CL=2 , H(DDR266B@ CL=2.5), L(DDR200@ CL=2) Function Supported Byte# H e x a V a lu e F u n c tio n D e s c rip tio n Note K Number of Bytes written into serial memory at module
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HYMD18M6456-H/L
8Mx64
DDR266A@
DDR266B@
DDR200@
HYMD18M645A6-K/H/L
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PDF
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
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PDF
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B5218
Abstract: uc 1201a 14001-1
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. N orth C entral N o rth w e st N orth E a s t 20 M all R oad S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 F A X (6 1 7 )2 7 3 -9 3 6 3 901 W a rre n v ille R oad S uite 120 Lisle, IL 6 0 5 3 2 -13 5 9
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251-B574
B5218
uc 1201a
14001-1
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD64KS, 4516CD64ES 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD64KS, 4516CD64ES is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: ,uPD45128163 are assembled.
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MC-4516CD64KS,
4516CD64ES
64-BIT
4516CD64ES
uPD45128163
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PDF
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Untitled
Abstract: No abstract text available
Text: HYMD132G725A8-K/H/L 32Mx72 DDR SDRAM Registered DIMM SERIAL PRESENCE DETECT Bin Sort : K D D R 266A eC L=2 , H(DDR266B C L=2.5), L(DDR 200® CL=2) Hexa Value Function Supported Function Description Byte# Note K H L K H Number of Bytes written into serial memory at module
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HYMD132G725A8-K/H/L
32Mx72
DDR266B
HYMD232G7268-K/H/L
256MB
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PDF
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JXXX
Abstract: No abstract text available
Text: MITSUBISHI LSIs e MH64S72QJA -7,-8 e°- 4,831,838,208-BIT 67,108,864-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY S o m e o f c o n te n ts are s u b je c t to c h a n g e w ith o u t n o tice . DESCRIPTION The MH64S72QJA is 67108864 - word x 72-bit
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MH64S72QJA
208-BIT
864-WQRD
72-BIT
MIT-DS-0332-0
16/Jun
JXXX
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PDF
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WIMA TFM
Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN
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RG121JU
WIMA TFM
Beckman 785-1
mkb3
wima TFM-.1UF-160V
bf197
diode zener ph c9v1
2N4286
2N3642
bf197p
transistor 2N2359A
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-454DA726 4 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-454DA726 is an 4,194,304 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 64M SDRAM : ,uPD4564163 Rev. E are assembled. This module provides high density and large quantities of memory
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MC-454DA726
72-BIT
MC-454DA726
uPD4564163
C-454DA726-A80
C-454DA726-A10
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TRANSISTOR tip122 CHN 949
Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.
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38v01
TRANSISTOR tip122 CHN 949
E2955T
BD706
TU F 13003
13003 Transistor NPN Power TO 126
transistor E2955T
construction linear amplifier 2sc1945
LA 4301
8d679
transistor bf 175
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PDF
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4229P-LOO-3C8
Abstract: No abstract text available
Text: MOT OR OL A SC 1EE D | b3fe,72S4 QOflSlGS b | XSTRS/R F MOTOROLA M J1 2 0 2 0 TECHNICAL DATA MJ12021 MJ12022 SEMICONDUCTOR De s i g n e r ’ s D a t a She et 5 .0 , 8 .0 and 1 5 A M P E R E NPN SILIC O N DEFLECTION POWER T R A N SISTO R S HIGH PERFORMANCE NPN
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MJ12021
MJ12022
J12020
J12021
J12022
4229P-LOO-3C8
4229P-LOO-3C8
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