IC HM 392 - 110 Search Results

ic HM 392 - 110

Abstract: vitrohm 412 101 R15 N 470 KP
Contextual Info: Vorzugswerte nach DIN/IEC 63: E6 E 12 E 24 E6 E 12 1.0 1.0 1.0 1.1 1.2 1.3 1.5 1.6 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.3 1.2 1.5 1.5 1.8 2.2 2 .2 2.7 E 48 E 96 E 192 E 48 E 96 100 100 100 162 162 101 102 105 102 105 165 169 169 174 109 110 110 110 178 115 115 182

Contextual Info: HM S £ M IG % ÏË Ê M 140 Com merce Drive S S Ä r ,8M5-1013 T C C 2 2 2 3 - 3 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS * SREQUKNOY * POWER OUT 2 2 2 3 GHJ: 3.0W % * ~ « ^OVVER GAIN * voltage: ov * HERMETIC f-'ACtvAGii . -\LL GOLD METALLIZED SYSTEM

CDR21BP

Abstract: 700B TT 2142 MIL-C-55681 CDR14 CDR21 CDR13BP S7B marking code AMERICAN TECHNICAL CERAMICS
Contextual Info: -O S '' o s -o ATC 700 B Series NPO Porcelain and Ceramic Multilayer Capacitors Case B Size .110" x .110") • Capacitance Range 0.1 pF to 5100 pF Low ESR/ESL • Zero T.C. Low Noise • High Self-Resonance Rugged Construction • Established Reliability (QPL)

Contextual Info: SlNIILE-IJI-LI N 2.41 .095 L o w Profile C o n fo rm a l N e t w o r k s CT S exiterhse n re sistc iBtvvo'k technology is avahable in saace-saving conformal networks. • High rel ab i ty cermet resistors • Space saving over rrl vicinal res stars • A va, la hie in odd cr even w. r’ ber of Dins

royal ohm chip resistor 1206

Abstract: Royal OHM royal ohm chip resistor 0805 RMC0603 RMC0805 hpwgf 0805W8 royal ohm chip resistor Marking code AHm royal ohm chip resistor 0603
Contextual Info: ROYAL OHM SPECIFICATION FOR APPROVAL FARNELL ELECTRONIC COMPONENTS. Description :_ Chip Resistors HJW8 xxxxxT xa RMC 1/8 W 1206 +/- 1% & 5% HM W AxxxxxTxx RMC 1/10 W (0805) +/- 1% & 5% Part no. HPW GxxxxxTxx RM C 1/16 W (0603) +/- 1% & 5% Approved by

490.2159

Abstract: Kombinat VEB Elektronische Bauelemente VEB Kombinat 49004 veb taschenbuch Kombinat VEB asterm Bauelementeinformation VEB M ik ro e le k tro n ik bauelemente Kombinat
Contextual Info: Widerstände Kombinat VEB Elektronische Bauelemente W ID E R S T Ä N D E In h a lt Feste S ch ic h tw id e rstä n d e Seite 6 V e r ä n d e rb a re S ch ich tw id e rstä n d e 50 Ein ste ilre g ier Kohleschicht Ein ste ilre g ler (Cerm etschicht) Potentiometer

514265C

Contextual Info: HM514265C Series Preliminary 2 6 2 ,1 4 4 -w o rd : 1 6 -b it D y n a m ic R a n d o m A c c e s s M e m o ry HITACHI The Hitachi H M 5 I 4 2 6 M ' is a C M O S dyn ami c R A M o r g a n i z e d 2 6 2 , 1 4 4 w or ds x 16 hits. HM 5 1426.‘> ’ has realized higher density, higher

eia SE-101-A

Contextual Info: Thick Film Chip Resistors NRC Series FEATURES • EIA STANDARD SIZING 0201 1/20W , 0402(1/16W ), 0603(1/10W ), 0805(1/8W ) 1206(1/4W ), 1210(1/3W ), 2010(3/4W ) AND 2512(1W ) • METAL G LAZED THICK FILM ON HIGH PURITY ALUM INA SUBSTRATE (CERM ET) PROVIDES UNIFORM Q UALITY AND HIGH RELIABILITY

LB203 DC

Contextual Info: SIE D • MM1bEÜ3 0018701 TEO ■ HIT2 HM514410 Serie HITACHI/ logic/ arrays/ mem _ Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory ■ DESCRIPTION H M 514410JP Series The Hitachi HM514410 is a CMOS dynamic RAM organized 1,048,576 word x 4-bit. HM514410 has realized higher density, higher performance and various func­

rn73e

Contextual Info: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 A vailable S izes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power R atings - 0.1 O hm to 22 M eg O hm R e sistance R ange - T ight Tolerance and Low T C R A vailable

Contextual Info: TO SHIBA 2SK2231 Field Effect Transistor U n i t in m m Silicon N Channel MOS Type L2-7c-MOS V High Speed, High Current Switching, DC-DC Converter Chopper Regulator and Motor Drive Applications F e a tu r e s • 4V Gate Drive • Low Drain-Source ON Resistance

Contextual Info: @TCRjEg 9BifIlf81£x(li£^BB3§ Low T C R Low O hm ic Thick Film Chip Fixed Resistor • Features i lOOmO -lOOOmO Resistance values from 100m to 1000m ohm i S i& T C R M ± 75ppm/‘C Lowest TCR from ±75ppm/°c Current detecting resistors for power supply, motor circuits, etc

Contextual Info: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 A vailable S izes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power R atings - 0.1 O hm to 22 M eg O hm R e sistance R ange - T ight Tolerance and Low T C R Available

Contextual Info: KOA FLAT CHIP RESISTORS SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power Ratings - 0.1 O hm to 22 M eg O hm R esistance R ange - Tight Tolerance and Low TC R Available

TM130EZ-H

Abstract: TM130EZ-M TM90EZ-24 TM90EZ-2H Ut90
Contextual Info: 296 HM — '¡ 7 . 9 • T M 9 0 E Z -24, m&m -2 H H £ Kl K2 A; * - M c -f—o- M— o o&m'f I1 2500V .- SH . •—O1' 9' O ■ «*$ « s;- TM90EZ-2H & m S1 'H & fi- tó'h & k tó I1 Vt>R\! /riKMSi /t s m I 2 -l 1600 1200 V hhm /riAvi 1700 1350

2N6218

Abstract: BC530 T1923 triac mw 137 BC532 BFW45 tr bc 337 393P BC394 BC533
Contextual Info: SE MIC ONDUCT ORS INC CHE D | fll3bbSG Q00D303 fi | T-^ High V oltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39

cl 6562

Contextual Info: HARRIS HM-6562 S E M IC O N D U C T O R PRODUCTS DIVISION A DIVISION OF HARRIS CORPORATION 256 x 4 C M O S RA M NOT RECOMMENDED FOR NEW DESIGNS SEE HM-6561 Features Pinout LO W POWER S T A N D B Y LO W POWER O P E R A T IO N F A S T ACCESS T IM E D A T A R E T E N T IO N V O L T A G E

HP83000

Abstract: Electro SEX X81D1 HP8300 X41D ECL IC NAND
Contextual Info: • 7 Ô1 1 D 7 3 O G lb a ^ O Tas B R K Iil Cyclone Series Cyclone Series GaAs Gate Arrays Rockwell Introduction The sub-micron Cyclone Series™ of GaAs gate arrays from Rockwell represent the culmination of over ten years of research and development.

Contextual Info: r SECTION ^ , M IL -C -2 6 5 0 0 h s c s e r ie s sooooo 8 0 -0 . NUMBERING SYSTEM S 8 0000 12 — 3 P6 I. -STD. PLATING,SHELL-FUSED TIN, CONTACTS-GOLD; FOR STNL'SSTLSHELL-PASSIVATE - SPECIAL MODIFICATIONS •ALTERNATE INSERT POSITION NO NUMBER FOR NORMAL

hp 2800

Abstract: 51C65H 51C65H-10 51C65H-12 51C65L-10 51C65L-12
Contextual Info: 51C65H HIGH PERFORMANCE STATIC COLUMN 64K X 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) • Static Column Mode Operation 51C65H-10 51C65H-12 100 120 55 65 ■ Fast “ Usable Speed’’ — Continuous data rate over 15 MHz

EVK75-050

Abstract: EVG31-050 EVK31-050 TAE 1102 2DI300A-050 H-17 H-18 H17133
Contextual Info: 246 — I — N P N , iq g m v s m o Z Ë Î. S V ebo c > « > VcBO m ^ I CP (A (A ) AC, 15m > B I f (A ) (A ) T , tf Pc (a i) (W ) Total (W ) V i., (i£ 2 ) CC) CC) (V ) CBO (m A ) ft * Œ 3. # fcUtèVcio m ft EBO V cB (V ) (m A ) Ä (ic Ä m A ) ft

Contextual Info: TYPE VPR Single-Ended FEATURES: • Low ESR • Long Life • Standoffs • Wide operating Temperatures 105°C The VPR capa citor m anufactured by Aero M is specifically designed for use in high freq uency sw itching pow er supplies w here low im pedance and low inductance characteristics are

PT1000 CONVERSION TABLE

Abstract: ER 2510 type bobbin RG-9B/U cable 2j 183j a431 csp 1040 39p SMD MARKING CODE 19l RG-180 connector 685 35K 222M SE SMD marking code BR24
Contextual Info: Table of Contents RF Inductors Surface Mount Radial Leaded Series EMI Series 4221 Series 4222 Series 8454 Series SMB 2.5 107 108 109 110 111 112 113 114 115 Surface Mount Series P1330 Series P1812 Series 2512 Series 3483 Series S3483 Series SDS130 Series SDS680

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .