IC EQUIVALENT Search Results

2SD2439

Abstract: 2SB1588
Contextual Info: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA

2SD2439

Abstract: 2SB1588
Contextual Info: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA

2SD2642

Abstract: 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687
Contextual Info: Equivalent circuit 2SD2642 V VCEO 110 V VEBO 5 V .V BR CEO IC 6 A ICBO Unit VCB=110V 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 16.9±0.3 VEB=5V IC=30mA IEBO 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max

SAP16N

Abstract: SAP16P SAP16N equivalent SAP16 sap16n circuit
Contextual Info: Equivalent circuit SAP16N D E V 5 V IC 15 A IB 1 A 150 Tc = 25°C W 10 mA 150 °C –40 to +150 °C Tj Tstg Unit max 100 µA 100 µA IEBO VEB = 5V VCEO IC = 30mA 160 hFE ✽ VCE = 4V, IC = 10A 5000 VCE (sat) IC = 10A, IB = 10mA 2.0 V VBE (sat) IC = 10A, IB = 10mA

2sd2495 equivalent

Abstract: 2SD2495 2SB1626 FM20
Contextual Info: Equivalent circuit 2SD2495 ICBO VCEO 110 V IEBO VEBO 5 V V BR CEO IC 6 A VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A

Contextual Info: MITSUMI Temperature Switch IC with Hysteresis MM3496 Temperature Switch IC with Hysteresis Monolithic IC MM3496 Outline This IC is a temperature switch IC that senses an ambient temperature around the IC and changes the IC output level when the temperature around the IC reaches the detection temperature. With the hysteresis

Contextual Info: MITSUMI Temperature Switch IC with Hysteresis MM3496 Temperature Switch IC with Hysteresis Monolithic IC MM3496 Outline This IC is a temperature switch IC that senses an ambient temperature around the IC and changes the IC output level when the temperature around the IC reaches the detection temperature. With the hysteresis

Contextual Info: MITSUMI Temperature Switch IC with Hysteresis MM3496 Temperature Switch IC with Hysteresis Monolithic IC MM3496 Outline This IC is a temperature switch IC that senses an ambient temperature around the IC and changes the IC output level when the temperature around the IC reaches the detection temperature. With the hysteresis

"Temperature Switch"

Abstract: Switch ic MM3496
Contextual Info: MITSUMI Temperature Switch IC with Hysteresis MM3496 Temperature Switch IC with Hysteresis Monolithic IC MM3496 Outline This IC is a temperature switch IC that changes the IC output level from Low to High when the temperature around the IC reaches the detection temperature. With the hysteresis function, IC output level returns to

switch ic

Abstract: MM3488 "Temperature Switch" mitsumi Power Switch
Contextual Info: MITSUMI Temperature Switch IC with Hysteresis MM3488 Temperature Switch IC with Hysteresis Monolithic IC MM3488 Outline This IC is a temperature switch IC that changes the IC output level from Low to High when the temperature around the IC reaches the detection temperature. With the hysteresis function, IC output level returns to

Contextual Info: MITSUMI Temperature Switch IC with Hysteresis MM3488 Temperature Switch IC with Hysteresis Monolithic IC MM3488 Outline This IC is a temperature switch IC that changes the IC output level from Low to High when the temperature around the IC reaches the detection temperature. With the hysteresis function, IC output level returns to

shottky diode 5a

Abstract: SAH02 ma162
Contextual Info: Equivalent circuit SAH02 2 1 Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode µA IEBO VEB=–10V –10max µA V BR CEO IC=–10mA –30min V ICBO VCEO –30 V VEBO –10 V IC –3 A hFE1 VCE=–2V, IC=–1A 100min IB –0.5 A hFE2 VCE=–2V, IC=–0.5A

Contextual Info: Equivalent circuit SAH02 2 1 Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode µA IEBO VEB=–10V –10max µA V BR CEO IC=–10mA –30min V ICBO VCEO –30 V VEBO –10 V IC –3 A hFE1 VCE=–2V, IC=–1A 100min IB –0.5 A hFE2 VCE=–2V, IC=–0.5A

16PIN

Abstract: LV1150M MFP24 MFP-24
Contextual Info: Ordering number :ENN6287 Bi-CMOS IC LV1150M Virtual Surround System IC Overview Package Dimensions The LV1150M is a virtual surround system Bi-CMOS IC for video soundtracks and audio. The main feature of this IC is the ability to create an audio ambience equivalent to that of a multichannel system by

a12425

Abstract: a12421 16PIN DIP24S LV1150 ENN6140A
Contextual Info: Ordering number :ENN6140A Bi-CMOS IC LV1150 Virtual Surround System IC Overview Package Dimensions The LV1150 is a virtual surround system Bi-CMOS IC for video soundtracks and audio. The main feature of this IC is the ability to create an audio ambience equivalent to that of a multichannel system by

h48 diode

Abstract: HITAG s hitag s256 Car security system block diagram HITAG PROTOCOL EEPROM 71005 diode H48 HITAG 2 algorithm timing Transponder ID 48 HITAG 2 coding algorithm
Contextual Info: INTEGRATED CIRCUITS DATA SHEET HITAG S HTS IC H32/HTS IC H56/HTS IC H48 Transponder IC Product Specification Revision 3.1 PUBLIC INFORMATION 2006 July 18 079231 Philips Semiconductors Product Specification Revision 3.1 2006 July 18 HITAG S HTS IC H32/HTS IC H56/HTS IC H48

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT790A ISSUE 3 - OCTOBER 1995 FEATURES * Very low equivalent on-resistance; RCE sat 125mΩ at 2A * Gain of 200 at IC=1 Amp and very low saturation voltage 1.8 IC/IB=100 IC/IB=40 IC/IB=10 1.8 Tamb=25°C

2SD2389

Abstract: 2SB1559 in401
Contextual Info: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max

transistor 2SD2389

Abstract: 2SD2389 2SB1559
Contextual Info: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max

Contextual Info: MITSUMI Temperature Switch IC With Enable MM3588 Temperature Switch IC With Enable Monolithic IC MM3588 Outline This IC is a a temperature switch IC that senses the IC ambient temperature and switches the IC output from the Low to the High level when there is a detected temperature.

Contextual Info: MITSUMI Temperature Switch IC With Enable MM3588 Temperature Switch IC With Enable Monolithic IC MM3588 Outline This IC is a a temperature switch IC that senses the IC ambient temperature and switches the IC output from the Low to the High level when there is a detected temperature.

Contextual Info: MITSUMI Temperature Switch IC With Enable MM3588 Temperature Switch IC With Enable Monolithic IC MM3588 Outline This IC is a a temperature switch IC that senses the IC ambient temperature and switches the IC output from the Low to the High level when there is a detected temperature.

2SD2390 equivalent

Abstract: 2SD2390 2SB1560
Contextual Info: Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1560 VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max

2SD2401

Abstract: 2SB1570
Contextual Info: C Equivalent circuit 2SD2401 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1570 2SD2401 Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC=30mA 150min IC 12 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA