Untitled
Abstract: No abstract text available
Text: Photocouplers LTV-814 824 844 M, S, S-TA, S-TA1, S-TP SERIES 1. DESCRIPTION 1.1 Features Current transfer ratio ( CTR : MIN. 20% at IF = +1mA, VCE = 5V ) Response time ( tr : TYP. 4µs at VCE = 2V, IC = 2mA, RL = 100Ω ) AC input response Low collector dark current ( ICEO :MAX.10-7 A at VCE=20V )
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LTV-814
000Vrms
LTV-814
LTV-824
LTV-844
LTV-814M
LTV-824M
LTV-844M
LTV-814S
LTV-824S
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LTV-814S-TP
Abstract: ltv844 814 8 pin ic
Text: L IT E - O N T E CH NO L O G Y CO RP O RAT IO N Property of LITE-ON Only FEATURES * AC input response * High input-output isolation voltage Viso = 5,000Vrms Jan 2011 * Low collector dark current ( ICEO : MAX. 10-7A at VCE = 20V ) * Current transfer ratio
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000Vrms
LTV-814
LTV-824
LTV-844
LTV-814M
LTV-824M
LTV-844M
LTV-814S
LTV-824S
LTV-844S
LTV-814S-TP
ltv844
814 8 pin ic
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12PIN
Abstract: CXG1189UR
Text: High Power SPDT Switch CXG1189UR Description The CXG1189UR is a high power SPDT Single Pole Dual Throw switch MMIC used in wireless communication systems, for example, GSM handsets, GSM/UMTS dual mode handsets. The Sony JPHEMT process is used for low insertion loss.
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CXG1189UR
CXG1189UR
900MHz,
17GHz
35dBm
12-pin
915MHz]
1910MHz]
UQFN-12P-01
12PIN
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CXG1189AXR
Abstract: capacitor 1.8ghz 100pF
Text: High Power SPDT Switch CXG1189AXR Description The CXG1189AXR is a high power SPDT Single Pole Doble Throw switch MMIC used in wireless communication systems, for example, GSM handsets, GSM/UMTS dual mode handsets. The Sony JPHEMT process is used for low insertion loss.
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CXG1189AXR
CXG1189AXR
900MHz,
17GHz
35dBm
12-pin
34dBm,
915MHz,
32dBm,
1910MHz,
capacitor 1.8ghz 100pF
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Untitled
Abstract: No abstract text available
Text: High Power SPDT Switch CXG1189AXR Description The CXG1189AXR is a high power SPDT Single Pole Doble Throw switch MMIC used in wireless communication systems, for example, GSM handsets, GSM/UMTS dual mode handsets. The Sony JPHEMT process is used for low insertion loss.
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CXG1189AXR
CXG1189AXR
900MHz,
17GHz
35dBm
12-pin
34dBm,
915MHz,
32dBm,
1910MHz,
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50ht2
Abstract: BL01RN1-A62 vapc PF1010A Hitachi DSA0064
Text: PF1010A MOS FET Power Amplifier Module for P/C LAN ADE-208-106A Z 2nd. Edition July 1996 Features • • • • Frequency range: 806 to 824 MHz Surface mounted small package: 1 cc, 3g with shielded cover Low voltage operation: 6 V Low power control current: 300 µA Typ
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PF1010A
ADE-208-106A
BL01RN1-A62-001
A2000
D-85622
50ht2
BL01RN1-A62
vapc
PF1010A
Hitachi DSA0064
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Hitachi DSA002719
Abstract: No abstract text available
Text: PF0231A MOS FET Power Amplifier Module for ADC Handy Phone ADE-208-378A Z 2nd Edition July 1996 Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for π/4-DQPSK • Simple Pout control: Controllable by VAPC
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PF0231A
ADE-208-378A
BL01RN1-A62-001
MUR4005-1835
D-85622
Hitachi DSA002719
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vapc
Abstract: BL01RN1-A62 PF0231A ADE-208-378A Hitachi DSA0046
Text: PF0231A MOS FET Power Amplifier Module for ADC Handy Phone ADE-208-378A Z 2nd Edition July 1996 Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for π/4-DQPSK • Simple Pout control: Controllable by VAPC
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PF0231A
ADE-208-378A
Ferri9-8300
D-85622
vapc
BL01RN1-A62
PF0231A
ADE-208-378A
Hitachi DSA0046
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GSM900RX
Abstract: No abstract text available
Text: 3P9T Antenna Switch Module for GSM/CDMA Dual Mode Handsets CXM3542ER Description The CXM3542ER is 3P9T anntena switch module for quad bands GSM and triple bands CDMA dual mode. This IC has a decoder circuit which supports CMOS control. Sony JPHEMT GaAs process is utilized for low insertion loss and high linearity.
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CXM3542ER
CXM3542ER
VQFN-34P
GSM1800Rx
GSM1900Rx
100pF)
GSM900RX
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850Rx
Abstract: CXM3542ER GSM1800 GSM1900 GSM900 CXM3542
Text: 3P9T Antenna Switch for GSM/CDMA Dual Mode Phones CXM3542ER Description The CXM3542ER is 3P9T anntena switch for quad bands GSM and triple bands CDMA dual mode. This IC has a decoder circuit which supports CMOS control. Sony JPHEMT GaAs process is utilized for low insertion loss and high linearity.
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CXM3542ER
CXM3542ER
VQFN-34P
GSM900Rx
GSM850Rx
100pF)
850Rx
GSM1800
GSM1900
GSM900
CXM3542
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Untitled
Abstract: No abstract text available
Text: AWT919D TX POWER MMIC E W iDIGIG* Advanced Product Information Your GaAs IC Source REV: 1 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both 824 - 849 MHz AMPS/DAMPS and
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AWT919D
T919D
kZ25H3
06/07/98-AWT919d
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BLM31A700SP
Abstract: No abstract text available
Text: E m m c s AWT920 TX POWER MMIC * Advanced Product Information Your GaAs IC Source Rev 0 900/1900 MHz Dual Band AMPS /PCS GaAs Power Amplifier IC DESCRIPTION: VD1_A VD2_A The AWT920 is a highly integrated GaAs monolithic Power Amplifier suited tor both AMPS 824 - 849
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AWT920
BLM31A700SPB
1B50-1S10
23/04/98-AW
BLM31A700SP
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Untitled
Abstract: No abstract text available
Text: JUAK Coming Attractions M a n A M P ic om pany Low-Cost Three-Way Power Splitter/Combiner 824 - 960 MHz DS53-0001 V1.00 SO-8 Features • Small Size an d Low Profile t 2284-.2440 1497-.1574 5.80-6.20 (3.80-4.00) 101.010(0.25) (EDIB (EDI • Industry Standard SO IC -8 SMT Plastic P ack ag e
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DS53-0001
S53-0001
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AC141-00
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT920 TX POWER MMIC Advanced Product Information Rev 0 900/1900 MHz Dual Band A M P S /P C S GaAs Power Amplifier IC DESCRIPTION: The AWT920 is a highly integrated GaAs monolithic Power Amplifier suited for both AMPS 824 - 849
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AWT920
AWT920
BLM1A800SPB
oure--22------J
BLM1A800SPB
BLM31A700SPB
AC141-00
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Untitled
Abstract: No abstract text available
Text: JUAK Preliminary Specifications M a n A M P ic om pany Low-Cost Three-Way Power Splitter/Combiner 824 - 960 MHz DS53-0001 V2.00 SO-8 Features • Sm a l l S iz e a n d Low P i o f i l e • I n d u s t r y S t a n d a id SO E - 8 SM T P la s t ic P a c k a g e
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DS53-0001
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Diplexer GSM
Abstract: Diplexer
Text: tlfCO Electronics Low Cost SMT Dual Band Diplexer, 824 - 960/1850 - 1990 MHz AMPS/PCS , 880 - 960/1700 - 1900 MHz (GSM/DCS) SO-8 Features • • • • • • • • DP52-0002 V2 Sm all Size and Low Profile Ind ustry Stand ard SO IC -8 S M T Plastic Package
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DP52-0002
Diplexer GSM
Diplexer
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GF-623
Abstract: 02102 229R GF-323 g4008 gf 824 GF-1123
Text: Slide Switch-Standard GF-323 S IN G L E P O LE /SIN G LE THRO W with detent GF-324 S IN G L E PO LE/D O U BLE THRO W (with detent) TYPE E L E C T R IC A L R A T IN G L IS T IN G GF-323 GF-G23 GF-823 GF-1123 GF-1323 GF-1623 GF-324 GF-624 GF-824 GF-1124 GF-1324
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GF-323
GF-324
GF-623
GF-823
GF-1123
GF-1323
GF-1623
GF-624
02102
229R
g4008
gf 824
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ST 80500
Abstract: No abstract text available
Text: M a n A M P com pany Low Cost Two-Way SMT Power Divider 824 - 960 MHz DS52-0001 V 2 .0 0 Features SO-8 S m a ll Size a n d Low P r o file .2284-.2440 In d u s tr y S t a n d a r d SO E - 8 SM T P la s t ic P a c k a g e .1 4 9 7 - .1 5 7 4 Excellent Am plitu de and P h aæ Balance
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DS52-0001
016THIC
ST 80500
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TF5S03ZZ
Abstract: No abstract text available
Text: S E R IE S M R Wide Input-Low Profile.300 MILITARY DC-DC CONVERTERS • Diodes JAN TX • Transformers Manufactured to MIL-T-27 TF5S03ZZ • Capacitors MIL-C 5536514 MIL-C39003/03 MIL-C 20/27E MIL-C 39014/05 MIL-R-22097 • Resistors MIL-R-39017 • 1C Hermetically Sealed
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Untitled
Abstract: No abstract text available
Text: NewHoOVDC SERIES LR Isolated Regulated up to 5 Watt DC-DC Converters Wide Input Range/up to 3.33:1 Fully Regulated r - j£ s S T All Units Shielded " FEA TU R ES: • Voltage regulation over input of LRE LRF LRA LRB LR C • Encapsulated semiconductors, conservatively
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LRC280
LRC48D
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Untitled
Abstract: No abstract text available
Text: SERIES MR Wide In p u t-L o w P ro file.300 MILITARY DC-DC CONVERTERS • Diodes JAN TX • T ran sfo rm ers M an u factu red to M IL -T -27 T F5S 03ZZ • Capacitors MIL-C 5536514 M IL-C39003103 MIL-C 20/27E MIL-C 39014/05 MIL-R-22097 • Resistors MIL-R-39017
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IL-C39003103
20/27E
MIL-R-22097
MIL-R-39017
MIL-STD-883
MRA18V
5-15VDC
MRE15D
MRE24D
MRE28D
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S824
Abstract: z66d
Text: S N 54A S 823, SN 54A S 824 SN 74A S 823, SN 74A S 824 9 BIT BUS INTERFACE FLIP FLOPS W ITH 3 STATE OUTPUTS D 2 8 2 5 , JU N E 1 9 8 4 -R E V IS E D J A N U A R Y 1 9 8 6 Functionally Equivalent to A M D 's A M 2 9 8 2 3 and A M 2 9 8 2 4 S N 54A S 823 . . . JT PACKAGE
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES FEATURES Single-Supply Operation: 3 to 30 Volts Very Low Input Bias Current: 2 pA Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 500 |aA/Amp Wide Bandwidth: 2 MHz Slew Rate: 2 V / jas No Phase Reversal APPLICATIONS Photo Diode Preamplifier
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AD824
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IRF48
Abstract: IRF100S IRE5D IRF100 IRF12S PICO Electronics IRA series IRA9S IRF28D IRE48S IRE15S
Text: PICO E L E C T R O N I C S INC s 3E j> 7 im i3 0 O O O O flfl? S ER IES IR Isolated Regulated up to 10 Watt DC-DC Converters Wide Input Range/up to 3.33:1 Fully Regulated All Units Shielded F EATU RES: nutput • Voltage regulation over input of LO W IIR E
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