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    IC 30MA Search Results

    IC 30MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
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    IC 30MA Price and Stock

    Microstrain Magnetic Base for G-Link-200

    Sensor Hardware & Accessories Magnetic Base plus 1/4-28 screw.
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    Mouser Electronics Magnetic Base for G-Link-200
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    IC 30MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMPT6517

    Abstract: CMPT6520
    Text: Central TM Semiconductor Corp. 315 R3 28-Mar 2001 SYMBOL VBE (SAT) TEST CONDITIONS IC=30mA, IB=3.0mA MIN MAX 0.90 UNITS V 2.0 V VBE (ON) hFE VCE=10V, IC=100mA VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA VCE=10V, IC=30mA 30 30 200 VCE=10V, IC=50mA VCE=10V, IC=100mA


    Original     		PDF 28-Mar 100mA 20MHz CMPT6517) CMPT6520) OT-23 CMPT6517 CMPT6520

    2SD2439

    Abstract: 2SB1588
    Text: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA


    Original     		PDF 2SD2439 2SB1588) FM100 100max 150min 5000min 55typ 95typ 2SD2439 2SB1588

    2SD2439

    Abstract: 2SB1588
    Text: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA


    Original     		PDF 2SD2439 2SB1588) FM100 100max 150min 5000min 55typ 95typ 2SD2439 2SB1588

    2SD2642

    Abstract: 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687
    Text: Equivalent circuit 2SD2642 V VCEO 110 V VEBO 5 V .V BR CEO IC 6 A ICBO Unit VCB=110V 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 16.9±0.3 VEB=5V IC=30mA IEBO 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max


    Original     		PDF 2SD2642 100max 110min 5000min 60typ 55typ O220F) 2SB1687) 2SD2642 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687

    SAP16N

    Abstract: SAP16P SAP16N equivalent SAP16 sap16n circuit
    Text: Equivalent circuit SAP16N D E V 5 V IC 15 A IB 1 A 150 Tc = 25°C W 10 mA 150 °C –40 to +150 °C Tj Tstg Unit max 100 µA 100 µA IEBO VEB = 5V VCEO IC = 30mA 160 hFE ✽ VCE = 4V, IC = 10A 5000 VCE (sat) IC = 10A, IB = 10mA 2.0 V VBE (sat) IC = 10A, IB = 10mA


    Original     		PDF SAP16N SAP16P) SAP16N SAP16P SAP16N equivalent SAP16 sap16n circuit

    2sd2495 equivalent

    Abstract: 2SD2495 2SB1626 FM20
    Text: Equivalent circuit 2SD2495 ICBO VCEO 110 V IEBO VEBO 5 V V BR CEO IC 6 A VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A


    Original     		PDF 2SD2495 100max 110min 5000min 60typ 55typ O220F) 2sd2495 equivalent 2SD2495 2SB1626 FM20

    2SD2389

    Abstract: 2SB1559 in401
    Text: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max


    Original     		PDF 2SD2389 2SB1559) MT-100 100max 150min 5000min 2SD2389 2SB1559 in401

    transistor 2SD2389

    Abstract: 2SD2389 2SB1559
    Text: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max


    Original     		PDF 2SD2389 2SB1559) MT-100 100max 150min 5000min transistor 2SD2389 2SD2389 2SB1559

    2SD2390 equivalent

    Abstract: 2SD2390 2SB1560
    Text: Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1560 VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max


    Original     		PDF 2SD2390 2SB1560) MT-100 100max 150min 5000min 55typ 95typ 2SD2390 equivalent 2SD2390 2SB1560

    2SD2401

    Abstract: 2SB1570
    Text: C Equivalent circuit 2SD2401 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1570 2SD2401 Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC=30mA 150min IC 12 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA


    Original     		PDF 2SD2401 2SB1570) MT-200 100max 150min 5000min 55typ 2SD2401 2SB1570

    2SD2390

    Abstract: 2SB1560
    Text: Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1560 VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max


    Original     		PDF 2SD2390 2SB1560) MT-100 100max 150min 5000min 55typ 95typ 2SD2390 2SB1560

    SAP16

    Abstract: SAP16N SAP16P SAP16N equivalent SAP16*p sap16n circuit
    Text: Equivalent circuit C Application: Audio –160 V –5 V IC –15 A IB –1 A 150 Tc=25°C W 10 mA IEBO VEB = – 5V VCEO IC = – 30mA –160 hFE ✽ VCE = – 4V, IC=–10A 5000 typ max Unit –100 µA –100 µA (36°) V 20000 VCE (sat) IC = – 10A, IB =–10mA


    Original     		PDF SAP16N) SAP16P SAP16 SAP16N SAP16P SAP16N equivalent SAP16*p sap16n circuit

    2SD2641

    Abstract: 2SB1685
    Text: Equivalent circuit 2SD2641 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1685 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA


    Original     		PDF 2SD2641 2SB1685) 100max 110min 5000min 60typ 55typ 2SD2641 2SB1685

    transistor 2sb1624 2sd2493

    Abstract: 2SB1624 2SD2493 2sd2493 transistor
    Text: Equivalent circuit 2SD2493 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1624 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA


    Original     		PDF 2SD2493 2SB1624) 100max 110min 5000min 60typ 55typ transistor 2sb1624 2sd2493 2SB1624 2SD2493 2sd2493 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA


    Original     		PDF 2SD2589 100max 110min 5000min 60typ 55typ 2SB1659) FM-25

    3202 a ic

    Abstract: SAP09N SAP09P
    Text: Equivalent circuit SAP09N B D Application: Audio V IC 10 A IB 1 A PC 80 Tc = 25°C W 10 mA 150 °C –40 to +150 °C Di IF Tj Tstg typ Unit max 100 µA 100 µA IEBO VEB = 5V VCEO IC =30mA 150 hFE ✽ VCE =4V, IC =6A 5000 VCE (sat) IC =6A, IB =6mA 2.0 V


    Original     		PDF SAP09N SAP09P) 3202 a ic SAP09N SAP09P

    IE5A

    Abstract: Transistor 2Sd2589 2SD2589 2SB1659
    Text: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA


    Original     		PDF 2SD2589 2SB1659) FM-25 100max 110min 5000min 60typ 55typ IE5A Transistor 2Sd2589 2SD2589 2SB1659

    Untitled

    Abstract: No abstract text available
    Text: MITSUMI Li-ion Battery Charge Control IC MM3658AR Li-ion Battery Charge Control IC Monolithic IC MM3658AR Outline This IC is a linear charge control IC for 1-cell lithium iron phosphate LiFePO4 battery. The chip temperature detection function can limit the temperature rise in the IC during high power charging


    Original     		PDF MM3658AR SSON-10pin. 558mAÂ 3380K

    Untitled

    Abstract: No abstract text available
    Text: MITSUMI 300mA Regulator IC MM3464 Series 300mA Regulator IC Monolithic IC MM3464 series Outline This IC is a high speed response 300mA regulator IC with low quiescent current and high ripple rejection. No load input current is 20µA typ. And ripple rejection is 75dB typ.


    Original     		PDF 300mA MM3464 160mV 300mA. 300mA 200mA)

    mm3464

    Abstract: MM3464A18 MM3464A30 MM34 MM3464A11 MM3464A33 IC 2576 5.0v SC-82 mitsumi SC82
    Text: MITSUMI 300mA Regulator IC MM3464 Series 300mA Regulator IC Monolithic IC MM3464 series Outline This IC is a high speed response 300mA regulator IC with low quiescent current and high ripple rejection. No load input current is 20µA typ. And ripple rejection is 75dB typ.


    Original     		PDF 300mA MM3464 160mV 300mA. OT-25 OT89-5 SC-82 MM3464A18 MM3464A30 MM34 MM3464A11 MM3464A33 IC 2576 5.0v SC-82 mitsumi SC82

    MM3464A33

    Abstract: No abstract text available
    Text: MITSUMI 300mA Regulator IC MM3464 Series 300mA Regulator IC Monolithic IC MM3464 series Outline This IC is a high speed response 300mA regulator IC with low quiescent current and high ripple rejection. No load input current is 20µA typ. And ripple rejection is 75dB typ.


    Original     		PDF 300mA MM3464 160mV 300mA. 200mA) MM3464A33

    HI 1000 IC PIN DIAGRAM

    Abstract: MM1106 MM1106XD MM1106XF
    Text: IC for System Reset with watchdog timer+battery back-up MM1106 MITSUMI IC for System Reset (with watchdog timer+battery back-up) Monolithic IC MM1106 Outline This IC combines the popular watchdog timer with a battery back-up, resulting in an IC that is easier to use.


    Original     		PDF MM1106 HI 1000 IC PIN DIAGRAM MM1106 MM1106XD MM1106XF

    Untitled

    Abstract: No abstract text available
    Text: IC for System Reset with watchdog timer+battery back-up MM1106 MITSUMI IC for System Reset (with watchdog timer+battery back-up) Monolithic IC MM1106 Outline This IC combines the popular watchdog timer with a battery back-up, resulting in an IC that is easier to use.


    Original     		PDF MM1106

    MITSUMI 3465

    Abstract: MM3464A33 MM3464A18
    Text: MITSUMI 300mA Regulator IC MM3464 Series 300mA Regulator IC Monolithic IC MM3464 series Outline This IC is a high speed response 300mA regulator IC with low quiescent current and high ripple rejection. No load input current is 20µA typ. And ripple rejection is 75dB typ.


    Original     		PDF 300mA MM3464 160mV 300mA. 200mA) MITSUMI 3465 MM3464A33 MM3464A18