IC 22CF Search Results

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

SML-LXR85SIC-TR

Contextual Info: UNCONTROLLED DOCUMENT 3 .2 0 CO. 1 2 6 ] - REV. 2.60 co.ioe: i » El I CATHDDE PA R T N U M B E R REV. SM L-LX R 85S IC -T R B E.C.N. N U M B E R AN D R E V ISIO N C O M M EN TS A E.C.N. # 1 0 B R D R . & # 1 0 7 7 1 . 7 .30 .0 1 B E.C.N. # 1 1 2 4 8 . B .1 2 .0 5

TO-22CFN

Contextual Info: T ra n s is to rs T O -2 2 0 • T Q -2 2 0 F P • T O -2 2 0 F N • H R T TD-220FP is a TG-220 w ifi mo« aated fin tar e re« mounting ar>d righer PC. 2W. TO-22CfN is a kw profle by 2mm version c* TO-22CFP wfrcul fin support pin, for higher mounting density. HRT is a taped power transistor package fee uso with an automatic placement machine.

Contextual Info: HSM101 THRU SEMICONDUCTOR HSM 106 TECHNICAL DATA FORWARD INTERNAHO'NAL ELECUD'H ICS LTD. TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER VOLTA GE RANGE - 50 to 600 Volts CURREN T- 1.0 Ampere FEATURES * Idea fo r surface m ounted a pp lica tio n s

d 7377

Abstract: 7377 951K #7377 1N120 ta 7377 2X40 2N2225 22cF
Contextual Info: MAZDA 7377 DOUBLE TÉTRODE D ’ÉMISSION AMPLIFICATEUR PUSH-PULL CLASSE C TRIPLEUR DE FRÉQUENCE JUSQU’A 1000 MHz 7377 Le e s t une d ouble té t ro d e d ’ é m is sio n à ch a u ffa g e i n d i r e c t . I l com porte des con n e xio n s c o u rt e s et p ré s e n t e des c a p a c it é s i n ­

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

2N7002DM

Abstract: kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252
Contextual Info: - p. <11 « P.02 Cover Page P. 29 DC-DC +1.25V P4 478 P.30 DC-DC +2.5V P. 31 Battery P. 32 Charger 1 of 2 P.03 P4 4 78 - PWR & GND (2 of 2) P.04 NB VT8703 - Host, CRT and TV Interface P.05 NB VT8703 - Memory Interface P.06 NB VT8703 - LVDS, (1 of 3) (2 of 3)

RIO R47

Abstract: ic 22cf
Contextual Info: | CHEMhCOWI « ¿ « I. f SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS / MVH •Endurance : 105°C 1000 to 2000 hours •Suitable to fit for downsized equipment •Solvent-proof type, see page16 i2 s r - MVL MVJ longer life ♦SPECIFICATIONS Characteristics

LA4070

Abstract: RM4A N2364 VA114 3005A 8S04
Contextual Info: INO„ 2 3 6 4 = ^ m i $ - 3 r - 5147 X V LA4 U ffj& * «•Witg'fe fi*U f U - \ 7^ 3. - I CT L A 2 B 0 0 t ArRiHT 1SK •A^-7>7'I*I«6 V c C= 9 V , R | _ = 8 Q , P o = 0 . 5 W •5 ~J>U-¥ 2 C 1 out = 7 0 m A max) . • K ^ - f A 'r t B s ( 2 0 0 m A X ,

Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

11-CQ2

Abstract: 22CF
Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

ic 22cf

Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

FDMS3660S

Abstract: MO-240 501B
Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

fdms3660s

Abstract: 501B 8 P
Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

22CF21CD

Abstract: 11-CQ2 22cF
Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

1201D

Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

Contextual Info: leluom Semiconductor, Inc. TC1070 TC1071 TC1187 50mA, 100 mA, AND 150 mA ADJUSTABLE CMOS LDOs WITH SHUTDOWN FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC1070, TC1071, and TC1187 are adjustable LDOs designed to supersede a variety of older bipolar voltage regulators. Total supply current is typically 50 p.A at

AMD am2 socket pinout

Abstract: amd AM2 pinout AMD socket AM2 pinout socket AM2 pinout pinout AM2 AMD AM27H010 50raW
Contextual Info: ADV MICRO b4E D MEMORY • 02S752Ö 0032QÖ7 böü Bi A M D 1) ti Advanced Micro Devices Am27H010 1 Megabit (131,072 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 45 ns — Typical programming time of 16 seconds

TCI6630K2L

Abstract: TCI6630 PCIE11 cortex-a15 PCIe Endpoint FFFF00 lte baseband mbps SCR 3 phase mpu5 01D3
Contextual Info: TCI6630K2L Multicore DSP+ARM KeyStone II System-on-Chip SoC Data Manual PRODUCT PREVIEW information applies to products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products

sprugy7

Abstract: pll 022a sprabh0 DDR3 jedec JESD79-3C lte turbo encoder 1GHz PRESCALER RF module that can used with TMS320C6670 "DDR3 SDRAM" 022d 744 312 011
Contextual Info: TMS320C6670 Multicore Fixed and Floating-Point System-on-Chip Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS689

Search Accelerator

Contextual Info: TMS320C6670 Multicore Fixed and Floating-Point System-on-Chip Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not

sprugy7

Abstract: sprugy9 sprabh0 SPRS689A M23 GSM module rake complex Rake search accelerator IEEE1588 3G HSDPA circuits diagram transistor sb 772
Contextual Info: TMS320C6670 Multicore Fixed and Floating-Point System-on-Chip Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS689A