IC 1496 SPECIFICATIONS Search Results
IC 1496 SPECIFICATIONS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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D82C284-8 |
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82C284 - Processor Specific Clock Generator, 16MHz, CMOS, CDIP18 |
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D82C284-12 |
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82C284 - Processor Specific Clock Generator, 25MHz, CMOS, CDIP18 |
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D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
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D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs |
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SCL3400-D01-004 | Murata Manufacturing Co Ltd | 2-axis (XY) digital inclinometer |
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IC 1496 SPECIFICATIONS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SME4050BGA S un M ic r o e l e c t r o n ic s July 1997 ATM622-S DATA SH EET Single Chip ATM SA R D e s c r ip t io n The ATM622-S is a single chip ATM solution designed to connect an ATM interface to the host via IEEE 1496-1993 bus standard SBus . The chip is an im plem entation of the ATM SAR (Segmentation And Reassem |
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SME4050BGA ATM622-S ATM622-S E4050BGA E4050BG 622-s | |
ic 1496 specifications
Abstract: ic 1496 IC 1496 function jumper osram LW Y3SG 10uh coilcraft 1210 ic 1496 datasheet ISL97632 AN1496 GRM32ER71H475KA88
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ISL97632IRTZ-EVALZ ISL97632 ISL97632-v091 com/ISL97632 V/30mA 1nF/50V GRM32ER71H475KA88 ISL97632 ic 1496 specifications ic 1496 IC 1496 function jumper osram LW Y3SG 10uh coilcraft 1210 ic 1496 datasheet AN1496 GRM32ER71H475KA88 | |
3P10T
Abstract: CXM3524ER GSM1800 GSM900 CXM3524
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3P10T CXM3524ER CXM3524ER VQFN-34P 100pF GSM1900Rx GSM1800Rx GSM1800 GSM900 CXM3524 | |
CXM3524ER
Abstract: GSM180 GSM1800 GSM1900 GSM900 GSM900RX
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Mode3P10T CXM3524ER CXM3524ER4GSM4UMTSDual VQFN-34P J08713 UMTS800M1 GSM85090018001900 CXM3524ER GSM180 GSM1800 GSM1900 GSM900 GSM900RX | |
ic 1496 specifications
Abstract: ic 1496 applications "Band-Pass Filters"
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-15and ic 1496 specifications ic 1496 applications "Band-Pass Filters" | |
1496h
Abstract: 1596H 1496M 1496N LM1496
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LM1596/LM1496 LM1596/LM1496 1496h 1596H 1496M 1496N LM1496 | |
1596G
Abstract: 1496G Motorola Application Note AN-531 1496L balanced modulator ic 1496 AM MODULATOR 1496 MC1496G 1496d MC1596G AM MODULATOR 1596
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MC1496/D MC1496 MC1596 C56335 1596G 1496G Motorola Application Note AN-531 1496L balanced modulator ic 1496 AM MODULATOR 1496 MC1496G 1496d MC1596G AM MODULATOR 1596 | |
Contextual Info: 37E D • 43G2E71 DOEbüia b I HAS High-Reliability High-Speed CMOS Logic ICs HARRIS SEMICOND SECTOR CD54HC4017/3A CD54HCT 4017/3A Johnson Decade Counter w/10 Decoded Outputs “T-MS*Zlr2-l The RCA CD54HC4017 and CD54HCT4017 are high-speed silicon-gate CMOS 5-stage Johnson counters with 10 |
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43G2E71 CD54HC4017/3A CD54HCT 4017/3A CD54HC4017 CD54HCT4017 2k-47k 54HCT | |
Contextual Info: V585ME 05 9939 Via Pasar • San Diego, CA 92126 TEL 619 621-2700 FAX(619) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES •Frequency Range: 1100' 1900 MHz ■Tuning Voltage: 0.8-20 Vdc II-14S - Style Package APPLICATIONS |
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V585ME II-14S | |
Modified Coffin-Manson Equation Calculations
Abstract: TN-00-18 TN0018 micron memory model for ddr3 TN-00-08 ddr3 MTBF 59559 Coffin-Manson Equation mobile ddr2 7994
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TN-00-18: TN-00-08 09005aef81694133/Source: 09005aef8169415f TN0018 Modified Coffin-Manson Equation Calculations TN-00-18 micron memory model for ddr3 ddr3 MTBF 59559 Coffin-Manson Equation mobile ddr2 7994 | |
640x200 seiko
Abstract: PF6000 CMOS 4039 SED1600F SED1631 200x640 LCD 640X200 with lcd controller SED1330F
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PF600-03 128-bit SED1620Doa SED1631 SED1632D SED1600F 620Doa- 620Doa SED1620Dqa) 640x200 seiko PF6000 CMOS 4039 200x640 LCD 640X200 with lcd controller SED1330F | |
PF6000
Abstract: SED1600F SED1620D0A pin configuration of ic 1496 SED1351F
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PF600-03 SED1620 128-bit SED1620D0A SED1631D SED1632D SED1600F SED1620D0A. PF6000 pin configuration of ic 1496 SED1351F | |
40mhz
Abstract: DCS1800 JESD51-7 MAX9993 MAX9994 MAX9994ETP MAX9996 PCS1900 max9994etp t 14.56mhz
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1400MHz 2200MHz MAX9994 2200MHz 2000MHz, MAX9996, MAX9994. 40mhz DCS1800 JESD51-7 MAX9993 MAX9994ETP MAX9996 PCS1900 max9994etp t 14.56mhz | |
Contextual Info: STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current • VCE sat = 1.55 V (typ.) @ IC = 30 A |
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STGW30H65FB, STGWT30H65FB O-247 DocID025849 | |
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t8760Contextual Info: m 82355 y ß M M v 12.0 A.C. S P E C IF IC A T IO N S 12.1 A.C. C h aracteristics T ab le s The A.C. specifications given in the following tables consist of output delays/float times and input setup and hold times. T ca SE = 0°C to 70°C, VCC = 5V ± 5 % , T AMB|ENT = 0°C to 55°C |
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multispring
Abstract: ASTM-B16 MIL-T-10727
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M55-S-NPS ASTM-B16 QQ-C-533) MIL-T-10727, Gold/101 multispring ASTM-B16 MIL-T-10727 | |
2609 al
Abstract: KT 708 459 MARKING sot89 powerex ks powerex kt THYRISTOR br 403
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PTL6T620_ PTL6T625_ PTL7T720 PTKATA20_ 2609 al KT 708 459 MARKING sot89 powerex ks powerex kt THYRISTOR br 403 | |
Contextual Info: STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data Features TAB • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current 3 2 • VCE sat = 1.55 V (typ.) @ IC = 30 A |
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STGFW30H65FB, STGW30H65FB, STGWT30H65FB O-247 DocID025849 | |
Contextual Info: STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data Features TAB • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current 3 2 • VCE sat = 1.55 V (typ.) @ IC = 30 A |
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STGFW30H65FB, STGW30H65FB, STGWT30H65FB O-247 DocID025849 | |
Contextual Info: APT95GR65JDU60 APT95GR65JDU60 650V, 95A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode E E The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between |
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APT95GR65JDU60 E145592 | |
281 C 38 100 DContextual Info: BULLETM NO. L 9 9 - 1 3 7 P/N 161011290 5 M E series METALLIZED POLYESTER FILM SWITCHING POWER SUPPLY CAPACITORS torapplicationsrewiring highcurrentcarryingcapabilityatelevated temperatureswithhighDVBTandpeakcurrent • HIGH C U R R E N T C A R R Y IN G C A P A B I L I T Y ■ HIGH O P E R A T IN G T E M P E R A T U R E ■ LOW E S R AHD E S L |
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400VDC 281 C 38 100 D | |
PP-PE
Abstract: FAS366 DB6F parallel scsi port B757 STP2002QFP 946f CLK40M
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STP2002QFP STP2002QFP 10/100Base-T 64-bit 32-bit 20-Mbps FAS366 10-/100-Mbps PP-PE DB6F parallel scsi port B757 946f CLK40M | |
SCSI-36
Abstract: PP-PE STP2002
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STP2002QFP STP2002QFP 10/100Base-T 64-bit 32-bit 20-Mbps FAS366 10-/100-Mbps SCSI-36 PP-PE STP2002 | |
ISPGAL22V10C-7LJ
Abstract: SSOP42 lattice 22v10 programming
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ispGAL22V10 ispGAL22V10C 22V10 Tested/100% ISPGAL22V10C-7LJ SSOP42 lattice 22v10 programming |