IC 0116 DC Search Results

stakpak

Abstract: abb press-pack igbt 20H2500 IGBT abb stakpak 5SNX 20H2500 igbt 3 KA 5SNX
Contextual Info: VCE IC = = 2500 V 2000 A ABB StakPak H Series Press-pack IGBT 5SNX 20H2500 preliminary Doc. No. 5SYB 0116-03 June 04 • High SOA • High tolerance to uneven mounting pressure • Suitable for series connection • Explosion resistant package • Modular design concept,

2SC2644

Contextual Info: TO SH IBA _ 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VH F-U HF BAND WIDEBAND AMPLIFIER APPLICATIONS • • « High Gain Low IMD fp = 4 GHz Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SC2498

Contextual Info: TO SH IBA 2SC2498 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2498 VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATION U nit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Collector Current

2216

Abstract: 2SC2216 2SC2717
Contextual Info: TOSHIBA 2SC2216.2SC2717 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS • • . 5.1 MAX. High Gain : Gpe = 33dB Typ. (f = 45 MHz) Good Linearity of hjpg. .n . 0.55 MAX. M AXIM UM RATINGS (Ta = 25°C)

82510

Abstract: 8250A girl INS8250 INS8250A MCS-51 1474h 290116
Contextual Info: 82510 ASYNCHRONOUS SERIAL CONTROLLER • Asynchronous Operation — 5- to 9-Bit Character Format — Baud Rate DC to 288k — Complete Error Detection MCS-51 9-Bit Protocol Support IBM PC AT* INS 8250A/16450 Software Compatible Control Character Recognition

2SC941TM

Abstract: 2SC941-0 2SC941-R 2SC941-Y
Contextual Info: TO SH IBA 2SC941TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC941TM HIGH FREQUENCY AMPLIFIER APPLICATIONS Unit in mm AM HIGH FREQUENCY AMPLIFIER APPLICATIONS 5 1 M AX AM FREQUENCY CONVERTER APPLICATIONS • Low Noise Figure : NF = 3.5dB (Max.) (f = 1 MHz)

2SC2669

Abstract: cq 455 2SC2669-0 2SC2669-R 2SC2669-Y BDH100
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SC2669 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 30dB (Typ.) (f = 10.7 MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. M AXIM UM RATINGS (Ta = 25°C)

2SC1923Y

Abstract: 2sc1923 10ID 2SC1923 Y
Contextual Info: TOSHIBA 2SC1923 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2 S C 1 923 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM , RF, M IX , IF AMPLIFIER APPLICATIONS 5 1 M AX • Small Reverse Transfer Capacitance : Cre = 0.7 pF (Typ.)

24c08wp

Abstract: 24C08 WP B58 258 24c02 LTN141X8-L00 24rf08 c11ph BC578 HT14X14-101 24C08W samsung LED TV schema
Contextual Info: A 4 3 B C Thermal&Fan Controler GMT PAGE:22 G768B CPU CORE REGULATOR MAXIM MAX1717 PAGE:5 SYSTEM DC/DC REGULATOR MAXIM MAX1631 PAGE:28 BATTERY CHARGER Controler MAXIM PAGE:29 MAX1772 BATTERY CHARGER FirmWare Ambit MC68HC908SR12 CPU Intel Mobile PIII/CELERON

2SC2347

Abstract: V900
Contextual Info: TO SH IBA 2SC2347 TOSHIBA TRANSISTOR TV UHF OSCILLATOR APPLICATIONS SILICON NPN EPITAXIAL PLANAR TYPE 2SC2347 Unit in mm TV VHF MIXER APPLICATIONS 5 1 M AX MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage

2SC2670

Abstract: 2SC2670-0 2SC2670-R 2SC2670-Y brel
Contextual Info: TO SH IBA 2SC2670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2670 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS AM HIGH FREQUENCY AMPLIFIER APPLICATIONS 4 .2 M A X . AM FREQUENCY CONVERTER APPLICATIONS • Low Noise Figure : NF = 3.5dB (Max.) (f = 1 MHz)

2SC2349

Contextual Info: T O S H IB A 2SC2349 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2349 TV VH F OSCILLATOR APPLICATIONS U n it in mm . 5.1 M A X. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC 0.45 SYMBOL RATING UNIT VCBO VCEO Ve b o ic ÏE PC Tj Tstg 30 15 3

cq 455

Abstract: BH Re transistor 2SC380TM 2SC380TM-R 2SC380TM-Y 10.7 MHZ
Contextual Info: TO SH IBA 2SC380TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC380TM Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS . 5.1 M A X . • High Power Gain : Gpe = 29dB (Typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage.

M34282E2GP

Abstract: R2h DIODE M34282M1 M34282M1-XXXGP M34282M2-XXXGP
Contextual Info: MITSUBISHI MICROCOMPUTERS 4282 Group RY A N IMI . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t No e par Som PRE L SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION • Timer Timer 1 . 8-bit timer

r2l diode

Abstract: R2h DIODE M34282Mx-XXXGP
Contextual Info: MITSUBISHI MICROCOMPUTERS 4282 Group RY A N IMI . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t No e par Som PRE L SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION • Timer Timer 1 . 8-bit timer

PE3339

Abstract: PE83342
Contextual Info: PRELIMINARY SPECIFICATION 4 PE83342 Military Operating Temperature Range 2.7 GHz Integer-N PLL with Field-Programmable EEPROM Product Description Peregrine’s PE883342 is a high performance integer-N PLL with embedded EEPROM capable of frequency synthesis up to 2.7 GHz with a speed-grade option to 3.0

PE3339

Abstract: PE83342
Contextual Info: PRELIMINARY SPECIFICATION 4 PE83342 Military Operating Temperature Range 2.7 GHz Integer-N PLL with Field-Programmable EEPROM Product Description Peregrine’s PE883342 is a high performance integer-N PLL with embedded EEPROM capable of frequency synthesis up to 2.7 GHz with a speed-grade option to 3.0

Contextual Info: 2. S c h e m a tic : 1. M echan ical Dimensions: A 0 .2 3 0 Max 4 3 t o O oj H H X D Ì 0 t 0.003 Min 1 2 3. E l e c tr ic a l S p e cificatio n s 0.030 OCL: 11 uH±30% OlOOKHz, 0.1A X O o DO OJ D X CQ ihr>- in in rn LL: 50nH Typ @1MHz, 5mA ò d Rated Voltage: 80Vdc

M39003/03

Contextual Info: I CSR23 MlL-C-39003/03 Solid Tantalum Capacitors MallorY GENERAL SPECIFICATIONS Extended Capacitance Graded Failure Rates DC Leakage: At+25°C - See Table Limit At+85°C - 10 x Table Limit At+125°C - 12.5 x Table Limit Capacitance Change Maximum: -10% @ -55“C

Contextual Info: V7S0 VS464641641B.VS864641641B 4M,8Mx64-Bit SDRAM Module Preliminary Description The VS4646441641B and VS8646441641B are 4Mx64-bit and 8Mx64-bit dual-in-line synchronous dynamic RAM module DIMM . It is mounted with 4/8 pieces of 4Mx16 synchronous DRAM (VG36641641BT), and each in a standard 54 pin TSOP package. The VS464641641B and VS864641641B

M34282Mx-XXXGP

Abstract: TDA 2516 R2h DIODE R-Car M34282M1 416SP marking code SKs M34282M2-XXXGP M34282E2GP M34282M1-XXXGP
Contextual Info: MITSUBISHI MICROCOMPUTERS 4282 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION • Timer Timer 1 . 8-bit timer This has a reload register and carrier wave output auto-control function

r2l diode

Abstract: R2h DIODE M34282M1 M34282Mx-XXXGP M34282E2GP M34282M1-XXXGP M34282M2-XXXGP
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

c516 transistor

Abstract: HP 4716 transistor b716 EF16 F016 M35052-XXXFP M35052-XXXSP 5116 RAM 5216 D916
Contextual Info: MITSUBISHI MICROCOMPUTERS M35052-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES PIN CONFIGURATION TOP VIEW CP1 1 20 VDD1 TESTA 2 19 HOR CS 3 18 CP2 SCK 4 17 OSCIN SIN 5 16 VSS AC 6 15 P1 VDD2 7 14 P0 CVIDEO 8 13 TESTB LECHA

ba 4916

Abstract: transistor fp 1016 C516 diode marking code HP2 SP 8616 9C016 BA 8A16 1D16 eprom 2516 IC 4016 PIN DIAGRAM
Contextual Info: MITSUBISHI MICROCOMPUTERS M35052-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • • • • • • • • • • • • • • • • • • APPLICATION TV, VCR, Movie REV.1.1 CP1 ← TESTA CS SCK SIN AC → → ↔