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    IBM REV 2.8 CIRCUIT SHEET Search Results

    IBM REV 2.8 CIRCUIT SHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    IBM REV 2.8 CIRCUIT SHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IBM REV 2.8

    Abstract: igc1
    Text: Preliminary IBM43RCLNA1116 Datasheet SiGe 1800 MHz DCS Low-Noise Amplifier with Gain Control Features • 1805-1880 MHz operation for DCS applications • Single 2.8 V, low current power requirement Applications • DCS portable transceivers Figure 1. IBM43RCLNA1116 Low Noise Amplifier


    Original     		PDF IBM43RCLNA1116 lna1116 IBM REV 2.8 igc1

    IBM REV 2.8

    Abstract: IBM REV 2.8 Circuit sheet IBM REV 2.7 IBM43RCLNA1116 IBM Microelectronics igc1
    Text: IBM43RCLNA1116 Datasheet SiGe 1800 MHz DCS Low-Noise Amplifier with Gain Control Features • 1805-1880 MHz operation for DCS applications • Single 2.8 V, low current power requirement Applications • DCS portable transceivers Figure 1. IBM43RCLNA1116 Low Noise Amplifier


    Original     		PDF IBM43RCLNA1116 IBM43RCLNA1116 lna1116 IBM REV 2.8 IBM REV 2.8 Circuit sheet IBM REV 2.7 IBM Microelectronics igc1

    GSM LNA

    Abstract: IBM REV 2.8 gsm amplifier schematic schematic GSM ESD IBM REV 2.8 Circuit sheet IBM Microelectronics igc1 gsm amplifier circuit
    Text: IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control Features • 925-960 MHz operation for GSM applications • Low power, single 2.8 volt supply Applications • GSM portable transceivers Figure 1. IBM43RCLNA1115 Low Noise Amplifier


    Original     		PDF IBM43RCLNA1115 IBM43RCLNA1115 lna1115 GSM LNA IBM REV 2.8 gsm amplifier schematic schematic GSM ESD IBM REV 2.8 Circuit sheet IBM Microelectronics igc1 gsm amplifier circuit

    GSM lna

    Abstract: igc1 IBM REV 2.8 ibm rev 2.1 lna gsm 900 IBM REV 2.8 Circuit sheet
    Text: Preliminary IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control Features • 925-960 MHz operation for GSM applications • Low power, single 2.8 volt supply Applications • GSM portable transceivers Figure 1. IBM43RCLNA1115 Low Noise


    Original     		PDF IBM43RCLNA1115 lna1115 GSM lna igc1 IBM REV 2.8 ibm rev 2.1 lna gsm 900 IBM REV 2.8 Circuit sheet

    BU2515

    Abstract: bu2515 equivalent BU2515AF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors.


    Original     		PDF BU2515AF OT199 BU2515 bu2515 equivalent BU2515AF

    bu2523af

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.


    Original     		PDF BU2523AF bu2523af

    BU2515AX

    Abstract: BU2515 bu2515 equivalent
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors.


    Original     		PDF BU2515AX OT399 BU2515AX BU2515 bu2515 equivalent

    BU2523AX

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.


    Original     		PDF BU2523AX BU2523AX

    BU2720DF

    Abstract: BU2720AF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


    Original     		PDF BU2720DF OT399 BU2720DF BU2720AF

    BU2720AX

    Abstract: BU2720AF IBM REV 2.8 Circuit sheet
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


    Original     		PDF BU2720AX OT399 BU2720AX BU2720AF IBM REV 2.8 Circuit sheet

    BU2720AF

    Abstract: BY228
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers up to 16 kHz. Designed to withstand VCES pulses up to 1700V.


    Original     		PDF BU2720AF OT199 BU2720AF BY228

    BU2708AF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current


    Original     		PDF BU2708AF BU2708AF

    BU2722AF

    Abstract: Philips Capacitor
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.


    Original     		PDF BU2722AF OT199 BU2722AF Philips Capacitor

    22af

    Abstract: IBM REV 2.8 Circuit sheet BU2720AF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


    Original     		PDF BU2720AF OT199 22af IBM REV 2.8 Circuit sheet BU2720AF

    BU2722AF

    Abstract: BU2722AX BU2720AF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.


    Original     		PDF BU2722AX OT399 BU2722AF BU2722AX BU2720AF

    BU2708AF

    Abstract: transistor horizontal BU2708AF BY228 TRANSISTOR hFE-100
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current


    Original     		PDF BU2708AF BU2708AF transistor horizontal BU2708AF BY228 TRANSISTOR hFE-100

    BU2708AF

    Abstract: BU2708AX BU2708AF equivalent BU-27
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current


    Original     		PDF BU2708AX BU2708AF BU2708AX BU2708AF equivalent BU-27

    SMD TRANSISTOR MARKING w7

    Abstract: No abstract text available
    Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV9115T O-236AB) PBHV8115T. AEC-Q101 PBHV9115T 771-PBHV9115T215 SMD TRANSISTOR MARKING w7

    bu2720dx

    Abstract: bu2720dx transistor BU2720DF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up


    Original     		PDF BU2720DX OT399 bu2720dx bu2720dx transistor BU2720DF

    BU2708AF

    Abstract: BU2708DF transistor 45 f 122
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to


    Original     		PDF BU2708DF BU2708AF BU2708DF transistor 45 f 122

    BU2720DF

    Abstract: BU2720D BU2720AF ICA26
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers up to 16 kHz. Designed to withstand


    Original     		PDF BU2720DF BU2720DF BU2720D BU2720AF ICA26

    TRANSISTOR SMD MARKING CODE w6

    Abstract: SMD transistor code P npn transistor w6 NXP TRANSISTOR SMD MARKING CODE SOT23 PBHV8115T PBHV9115T TRANSISTOR SMD MARKING CODE 26 MARKING CODE SMD IC
    Text: PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV8115T O-236AB) PBHV9115T. AEC-Q101 PBHV8115T TRANSISTOR SMD MARKING CODE w6 SMD transistor code P npn transistor w6 NXP TRANSISTOR SMD MARKING CODE SOT23 PBHV9115T TRANSISTOR SMD MARKING CODE 26 MARKING CODE SMD IC

    BU2523AF

    Abstract: BU2523 BU2523DX BU2525AF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.


    Original     		PDF BU2523DX BU2523AF BU2523 BU2523DX BU2525AF

    BU2708DX

    Abstract: transistor 45 f 122 BU2708D IBM REV 2.8 BU2708AF BU2708 BU2708DF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to


    Original     		PDF BU2708DX BU2708DX transistor 45 f 122 BU2708D IBM REV 2.8 BU2708AF BU2708 BU2708DF