IB 6415 Search Results

7406n

Abstract: 7408n 74193N 7416N 7407N 74181N 74LS01N 7438N 7437N 74h00n
Contextual Info: CYFROWE UKtADY SCALONE TTL SERII UCY 74 . /UCA 64 . Wykaz oznaczen parametrów technicznych poj'emnosc Unii statyczny wspólczynnik wzmocnienia pr^dowego w ukladzie OE "21B pr^d bazy IB IC pr^d kolektora Icc pr^d zasilania ICC+ ICC" OD 011 ICCH ICCH-*'

2SD2655WM-TL-E

Abstract: RENESAS marking code package 2SB1691 2SD2655 SC-59A RENESAS mpak marking code
Contextual Info: 2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier REJ03G0810-0200 Previous ADE-208-1388A Rev.2.00 Aug.10.2005 Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)

RH1498Mw

Abstract: LTC 809 RH1498M RH1498 MIL-PRF38535 TM1019
Contextual Info: SPEC NO. 05-08-5208 REV. B RH1498M, 10MHz, 6V / s Rail-to-Rail Input and Output precision C-load Op Amp Dice REVISION RECORD REV DESCRIPTION DATE INITIAL RELEASE 04/25/06 A REMOVED NOTE #5 FROM TITLE TABLE II ELECTRICAL CHARACTERISTICS - POSTIRRADIATION, VS=5V, 3V, 50 Krads, IB, from 809 to 800 nA, PAGE 13 OF 14.

2SB1691

Abstract: 2SD2655
Contextual Info: 2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 Previous ADE-208-1387A (Z Rev.2.00 Dec.09.2004 Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = –1 A Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)

RH1498Mw

Abstract: RH1498 LTC 809 MIL-PRF38535 TM1019
Contextual Info: SPEC NO. 05-08-5208 REV. E RH1498, 10MHz, 6V / s Rail-to-Rail Input and Output precision C-load Op Amp Dice REVISION RECORD REV DESCRIPTION DATE INITIAL RELEASE 04/25/06 A REMOVED NOTE #5 FROM TITLE TABLE II ELECTRICAL CHARACTERISTICS - POSTIRRADIATION, VS=5V, 3V, 50 Krads, IB, from 809 to 800 nA, PAGE 13 OF 14.

QML-38535

Abstract: LTC1150MJ8
Contextual Info: REVISIONS LTR DESCRIPTION Make changes to 1.3 and Vos, table I. - ro. lio , I ib , A v o l , CMRR, PSRR, lCc DATE YR-MO-DA APPROVED 99-04-13 R. MONNIN tests as specified in REV SHEET REV SHEET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5

RH1056A

Contextual Info: SPEC NO. 05-08-5019 REV. R RH1056A, PRECISION, HIGH SPEED, JFET INPUT OPERATIONAL AMPLIFIER REVISION RECORD DESCRIPTION REV DATE INITIAL RELEASE 06/12/96 A PAGE 18, TABLE II, DELETED VOS PARAMETER AND CHANGED +IB AND –IB DELTA LIMITS. 04/15/97 B RELAXATION OF MAX VOS AT 25°C, FROM 180 V to 300 μV, TABLE 1, PAGE 16; RELAXATION

RH1056AMW

Abstract: RH1056AMH RH1056A MIL-STD-885
Contextual Info: SPEC NO. 05-08-5019 REV. S RH1056A, PRECISION, HIGH SPEED, JFET INPUT OPERATIONAL AMPLIFIER REVISION RECORD DESCRIPTION REV DATE INITIAL RELEASE 06/12/96 A PAGE 18, TABLE II, DELETED VOS PARAMETER AND CHANGED +IB AND –IB DELTA LIMITS. 04/15/97 B RELAXATION OF MAX VOS AT 25°C, FROM 180 V to 300 μV, TABLE 1, PAGE 16; RELAXATION

RH1056A

Abstract: RH1056AMW
Contextual Info: SPEC NO. 05-08-5019 REV. L RH1056A, PRECISION, HIGH SPEED, JFET INPUT OPERATIONAL AMPLIFIER REVISION RECORD DESCRIPTION REV DATE INITIAL RELEASE 06/12/96 A PAGE 18, TABLE II, DELETED VOS PARAMETER AND CHANGED +IB AND –IB DELTA LIMITS. 04/15/97 B RELAXATION OF MAX VOS AT 25°C, FROM 180 µV to 300 µV, TABLE 1, PAGE 16; RELAXATION

w10 jfet

Abstract: RH1056AMW RH1056A MIL-STD-885 RH1056AMH jfet application and specification
Contextual Info: SPEC NO. 05-08-5019 REV. N RH1056A, PRECISION, HIGH SPEED, JFET INPUT OPERATIONAL AMPLIFIER REVISION RECORD DESCRIPTION REV DATE INITIAL RELEASE 06/12/96 A PAGE 18, TABLE II, DELETED VOS PARAMETER AND CHANGED +IB AND –IB DELTA LIMITS. 04/15/97 B RELAXATION OF MAX VOS AT 25°C, FROM 180 V to 300 μV, TABLE 1, PAGE 16; RELAXATION

5962-8952001YX

Contextual Info: ^crn * U.S. GOVIRNMINT PRINTINGOfFICI: 1987 — 748-129/60911 JLT O/ 5962- El 700 D IS T R IB U T IO N S T A T E M E N T A . A p p ro v e d fo r p u b lic re le a s e ; d is trib u tio n Is u n lim ite d . 1. SCOPE 1. 1 Scope. Th i s dr awi ng de s c r i b es de v i c e r equi r ement s f o r c l a s s B m i c r o c i r c u i t s i n accor dance

IDG 600

Abstract: M61880FP 20P2N-A M61880
Contextual Info: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.

M66515FP

Abstract: m66515 20P2N-A Laser Diode driver making ld
Contextual Info: M66515FP Laser Diode Driver/Controller REJ03F0084-0100Z Rev.1.0 Sep.22.2003 Description The M66515 is a laser diode driver/controller that performs drive and controls the laser power control of a type of semiconductor laser diode the anode of which is connected, with the cathode of a photodiode for monitoring, to a stem

M61880FP

Abstract: making ld 20P2N-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TD400

Abstract: 2N3904
Contextual Info: 2N3904 Silicon NPN Epitaxial General Purpose Amplifier REA03G0001-0200Z Rev.2.00 Jul.22.2004 Features • Low saturation voltage • General purpose amplifier and switching • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier

NPN 2n3904

Abstract: 2N3904 2N3904 Equivalent
Contextual Info: 2N3904 Silicon NPN Epitaxial General Purpose Amplifier REA03G0001-0200Z Rev.2.00 Jul.22.2004 Features • Low saturation voltage • General purpose amplifier and switching • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier

M66515FP

Abstract: m66515 20P2N-A circuit diagram APC rs 1200
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC1472

Abstract: 2SC1472KATZ-E 2SC1472KBTZ-E PRSS0003DA-A SC-43A 2SC1472KB
Contextual Info: 2SC1472 K Silicon NPN Epitaxial, Darlington REJ03G0688-0200 (Previous ADE-208-1054) Rev.2.00 Aug.10.2005 Application High gain amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 3 1. Emitter 2. Collector 3. Base 2 1 3 2 1 Absolute Maximum Ratings

R61509V

Abstract: S695 diode
Contextual Info: Target Spec R61509V 260k-color, 240RGB x 432-dot graphics liquid crystal controller driver for Amorphous-Silicon TFT Panel REJxxxxxxx-xxxx Rev.0.11 April 25, 2008 Description . 6

Contextual Info: 2SC458 K Silicon NPN Epitaxial REJ03G0680-0200 (Previous ADE-208-1045) Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base

2sc458

Abstract: 2SC458KB PRSS0003DA-A SC-43A 2SC458KCTZ-E
Contextual Info: 2SC458 K Silicon NPN Epitaxial REJ03G0680-0200 (Previous ADE-208-1045) Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base

Contextual Info: SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857 • High Current Gain-Bandwidth Product fT • Hermetic Ceramic Surface Mount Package • Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

2SA673AKC

Abstract: 2SA673A 2SA673AKCTZ-E 2SA673AKBTZ-E 2SA673AKDTZ-E PRSS0003DA-A SC-43A
Contextual Info: 2SA673A K Silicon PNP Epitaxial REJ03G0627-0300 (Previous ADE-208-313A) Rev.3.00 Aug.10.2005 Application • Low frequency amplifier • Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base

Contextual Info: SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857 • High Current Gain-Bandwidth Product fT • Hermetic Ceramic Surface Mount Package • Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)