IPC2711T Search Results

BYPASS Capacitors NEC

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC2711T 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES High power gain 13 dB TYP. @ f = 1 GHz Excellent frequency response 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC2711T 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 13 dB TYP. @ f = 1 GHz • Excellent frequency response 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

nec ecom 3.29

Abstract: PC2712TB RETU 3.02 2712T PC2711TB
Contextual Info: DATA SHEET_ ¿IPC2711TB, ¿IPC2712TB BIPOLAR ANALOG INTEGRATED CIRCUITS 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR DBS TUNERS DESCRIPTION The ^P C 2711TB and ^P C 2712TB are silicon monolithic integrated circuits designed as buffer am plifier for DBS

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT juPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ¿¿PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The /iPC3210TB is

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS JuPC2711TB, JuPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR DBS TUNERS DESCRIPTION The ¿iPC2711TB and ¿iPC2712TB are silicon monolithic integrated circuits designed as buffer amplifier for DBS