GA200HS60S1PbF
Abstract: No abstract text available
Text: Bulletin I27305 01/07 GA200HS60S1PbF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features VCES = 600V • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses
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I27305
GA200HS60S1PbF
08-Mar-07
GA200HS60S1PbF
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40HF
Abstract: No abstract text available
Text: Bulletin I27310 01/07 IRKJS209/150P SCHOTTKY RECTIFIER 200 Amp Description/ Features The IRKJS209. Schottky rectifier Common Anode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical
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I27310
IRKJS209/150P
IRKJS209.
40HF
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PDF
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L500H
Abstract: No abstract text available
Text: Bulletin I27308 01/06 GB10RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 12A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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I27308
GB10RF60K
E78996
12-Mar-07
L500H
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Untitled
Abstract: No abstract text available
Text: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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I27307
GB20RF60K
E78996
12-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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I27309
GB50RF60K
12-Mar-07
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PDF
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GB30RF60K
Abstract: ntc 901
Text: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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Original
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I27303
GB30RF60K
12-Mar-07
GB30RF60K
ntc 901
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Untitled
Abstract: No abstract text available
Text: Bulletin I27315 02/07 CPV363M4UPbF UltraFast IGBT IGBT SIP MODULE 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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I27315
CPV363M4UPbF
360Vdc,
12-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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I27302
GB50XF60K
80merchantability,
12-Mar-07
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PDF
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CPV364M4FPbF
Abstract: No abstract text available
Text: Bulletin I27316 02/07 CPV364M4FPbF IGBT SIP MODULE Fast IGBT Features 1 • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz
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I27316
CPV364M4FPbF
360Vdc,
12-Mar-07
CPV364M4FPbF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27311 01/07 IRKJS440/030P SCHOTTKY RECTIFIER 440 Amp Description/ Features The IRKJS440. Schottky rectifier Common Anode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical
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I27311
IRKJS440/030P
IRKJS440.
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27304
E78996
12-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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I27302
GB50XF60K
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40HF
Abstract: 500 va sine wave ups circuit 030P
Text: Bulletin I27311 01/07 IRKJS440/030P SCHOTTKY RECTIFIER 440 Amp Description/ Features The IRKJS440. Schottky rectifier Common Anode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical
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I27311
IRKJS440/030P
IRKJS440.
40HF
500 va sine wave ups circuit
030P
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I27301
Abstract: L200H
Text: Bulletin I27301 01/07 GB75XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 64A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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I27301
GB75XF60K
80merchantability,
12-Mar-07
L200H
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Untitled
Abstract: No abstract text available
Text: Bulletin I27312 02/07 CPV362M4UPbF IGBT SIP MODULE UltraFast IGBT Features 1 • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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Original
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I27312
CPV362M4UPbF
360Vdc,
12-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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I27306
GB15RF60K
E78996
12-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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I27300
GB20XF60K
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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Original
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I27307
GB20RF60K
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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Original
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I27309
GB50RF60K
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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Original
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I27303
GB30RF60K
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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I27300
GB20XF60K
80merchantability,
12-Mar-07
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273B
Abstract: ESAB92-02 ESAB92M-02 ESAB92M-03 ESAC06-06 ESAC25-02C ESAC25-02N ESAC25-04C
Text: 54 54 54 54 273B 27 3C 273A ! 273B 273A 1273C 54 54 54 54 273B 273C 273A 273A 273B 273C 273B 273C 1273A 273A 54 273B I273C 273C 273A 273B 54 273A 640G 273A 154 LOLOIO LOLO W m Èêtêèê œmm m HJ ó >i» n n n Q € -pa-f5 G & E a # e M it $ Ö & X « >P#
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OCR Scan
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ESAB92-02
ESAB92M-02
ESAB92M-03
ESAC06-06
ESAC25-02C
BSAC25-02D
ESAC25-02N
25MAX
24MIN
273B
ESAB92-02
ESAB92M-02
ESAC06-06
ESAC25-02C
ESAC25-02N
ESAC25-04C
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ESAC25-02N
Abstract: ESAC06-06 273B ESAB92-02 ESAB92M-02 ESAB92M-03 ESAC25-02C ESAC25-04C esac31-02d ESAC25M02D
Text: 54 54 54 54 273B 27 3C 273A ! 273B 273A 1273C 54 54 54 54 273B 273C 273A 273A 273B 273C 273B 273C 1273A 273A 54 273B I273C 273C 273A 273B 54 273A 640G 273A 154 LOLOIO LOLO W m Èêtêèê œmm m HJ ó >i» n n n Q € -pa-f5 G & E a # e M it $ Ö & X « >P#
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OCR Scan
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ESAB92-02
ESAB92M-02
ESAB92M-03
ESAC06-06
ESAC25-02C
BSAC25-02D
ESAC25-02N
ESAC39-06N
ESAC39M-04C
ESAC39M-04D
ESAC25-02N
ESAC06-06
273B
ESAB92-02
ESAB92M-02
ESAC25-02C
ESAC25-04C
esac31-02d
ESAC25M02D
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PDF
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273B
Abstract: ESAB92-02 ESAB92M-02 ESAB92M-03 ESAC06-06 ESAC25-02C ESAC25-02N ESAC25-04C esac25m04c
Text: 54 54 54 54 273B 27 3C 273A ! 273B 273A 1273C 54 54 54 54 273B 273C 273A 273A 273B 273C 273B 273C 1273A 273A 54 273B I273C 273C 273A 273B 54 273A 640G 273A 154 LOLOIO LOLO W m Èêtêèê œmm m HJ ó >i» n n n Q € -pa-f5 G & E a # e M it $ Ö & X « >P#
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OCR Scan
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ESAB92-02
ESAB92M-02
ESAB92M-03
ESAC06-06
ESAC25-02C
BSAC25-02D
ESAC25-02N
ESAC39-06N
ESAC39M-04C
ESAC39M-04D
273B
ESAB92-02
ESAB92M-02
ESAC06-06
ESAC25-02C
ESAC25-02N
ESAC25-04C
esac25m04c
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