I272 Search Results
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Wakefield-Vette OMNI-UNI-27-25HEATSINK TO-247 TO-264 TO-220 |
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OMNI-UNI-27-25 | Bulk | 14 Weeks | 1,000 |
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OMNI-UNI-27-25 | 1,000 |
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Advantech Co Ltd EKI-2725I-CENETWORK SWITCH-UNMANAGED 5 PORT |
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Advantech Co Ltd EKI-2725-CENETWORK SWITCH-UNMANAGED 5 PORT |
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Altran Magetics AMI-27-25-6LINE FILTER 250VAC 25A CHASS MNT |
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Alliance Sensors Group LRLI-27-200-R-00-20-ASENSOR LINEAR 203.2MM CABLE |
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LRLI-27-200-R-00-20-A | Tube | 3 | 1 |
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I272 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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GA200SA60SPContextual Info: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC |
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I27235 GA200SA60SP OT-227 OT-227 GA200SA60SP | |
GA100TS60SFContextual Info: Bulletin I27201 rev. A 01/06 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • VCES = 600V Standard Speed PT Igbt Technology Fred PT Antiparallel diodes with Fast recovery Very Low Conduction Losses Al2O3 DBC UL Pending |
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I27201 GA100TS60SF 08-Mar-07 GA100TS60SF | |
Contextual Info: Bulletin I27299 01/07 GB30XF60K IGBT SIXPACK MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 35A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft |
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I27299 GB30XF60K | |
GA100TS120UPBFContextual Info: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode |
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I27243 GA100TS120UPbF GA100TS120UPBF | |
Contextual Info: Bulletin I27231 07/06 UFB200FA20P Insulated Ultrafast Rectifier Module Features • • • • • • • • • • • Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape |
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I27231 UFB200FA20P OT-227 UFB200FA20P | |
Contextual Info: Bulletin I27219 03/06 MT.KPbF SERIES THREE PHASE CONTROLLED BRIDGE Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case Excellent power volume ratio |
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I27219 E78996 113MT 112MT 111MT 113MT. | |
thyristor diode module IRK E78996
Abstract: IR E78996 105 IR E78996
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I27215 E78996 3500VRMS O-240AA Al203 thyristor diode module IRK E78996 IR E78996 105 IR E78996 | |
E78996
Abstract: IR E78996 4000VRMS transistor and IGBT
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I27220 200MT40KPbF E78996 12-Mar-07 IR E78996 4000VRMS transistor and IGBT | |
Contextual Info: Bulletin I27245 09/06 HFA120FA60P HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A K2 A2 K1 A1 Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/ s Features • • • • • • Fast Recovery time characteristic |
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I27245 HFA120FA60P 270nC OT-227 OT-227 HFA120EA60) OT-227) | |
Contextual Info: Bulletin I27213 03/06 IRK.41, .56.PbF SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage TOTALLY LEAD-FREE |
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I27213 E78996 3500VRMS O-240AA Al203 | |
40HFContextual Info: Bulletin I27268 rev. A 12/06 IRKCS203/100P SCHOTTKY RECTIFIER 200 Amp Description/ Features The IRKCS203. Schottky rectifier Common Cathode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical |
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I27268 IRKCS203/100P IRKCS203. 40HF | |
Diode smd code EXPContextual Info: Bulletin I27247 rev. B 11/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features VCES = 600V • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC |
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I27247 70MT060WHTAPbF 150kHz Diode smd code EXP | |
40HF
Abstract: SCHOTTKY RECTIFIER 400A 500 va sine wave ups circuit
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I27257 IRKCS401/045P IRKCS401. 40HF SCHOTTKY RECTIFIER 400A 500 va sine wave ups circuit | |
40HFContextual Info: Bulletin I27262 rev. A 12/06 IRKDS209/150P SCHOTTKY RECTIFIER 100 Amp Description/ Features The IRKDS209. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical |
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I27262 IRKDS209/150P IRKDS209. 40HF | |
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GA200HS60S1
Abstract: 30EPH06 tig welding machine
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I27222 GA200HS60S1 GA200HS60S1 30EPH06 tig welding machine | |
Contextual Info: Bulletin I27295 12/06 IRKJS403/100P SCHOTTKY RECTIFIER 400 Amp Description/ Features The IRKJS403. Schottky rectifier Common Anode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. Typical |
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I27295 IRKJS403/100P IRKJS403. 12-Mar-07 | |
Contextual Info: Bulletin I27299 01/07 GB30XF60K IGBT SIXPACK MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 35A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft |
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I27299 GB30XF60K 80merchantability, 12-Mar-07 | |
Contextual Info: Bulletin I27290 12/06 IRKCS209/150P SCHOTTKY RECTIFIER 200 Amp Description/ Features The IRKCS209. Schottky rectifier Common Cathode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical |
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I27290 IRKCS209/150P IRKCS209. 12-Mar-07 | |
Contextual Info: Bulletin I27262 rev. A 12/06 IRKDS209/150P SCHOTTKY RECTIFIER 100 Amp Description/ Features The IRKDS209. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical |
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I27262 IRKDS209/150P IRKDS209. 12-Mar-07 | |
Contextual Info: Bulletin I27273 02/07 CPV364M4UPbF UltraFast IGBT IGBT SIP MODULE 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency over 5kHz |
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I27273 CPV364M4UPbF 360Vdc, 12-Mar-07 | |
94356Contextual Info: Bulletin I27217 03/06 MT.KPbF SERIES Power Modules THREE PHASE BRIDGE Features Package fully compatible with the industry standard INT-Apak power modules series High thermal conductivity package, electrically insulated case Excellent power volume ratio, outline for easy connections to |
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I27217 E78996 60MTmerchantability, 12-Mar-07 94356 | |
Contextual Info: Bulletin I27251 02/07 CPV362M4FPbF Fast IGBT IGBT SIP MODULE 1 Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz |
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I27251 CPV362M4FPbF 360Vdc, 12-Mar-07 | |
Contextual Info: Bulletin I27264 rev. A 11/06 IRKDS408/060P SCHOTTKY RECTIFIER 200 Amp Description/ Features The IRKDS408. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical |
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I27264 IRKDS408/060P IRKDS408. 12-Mar-07 | |
Contextual Info: Bulletin I27293 12/06 IRKCS201/045P SCHOTTKY RECTIFIER 200 Amp Description/ Features 1 The IRKCS201. Schottky rectifier Common Cathode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. Typical |
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I27293 IRKCS201/045P IRKCS201. 12-Mar-07 |