I203 TRANSISTOR Search Results

i203 transistor

Abstract: i203
Contextual Info: OPTOELECTRONICS - I I OPTICAL CENTERLiNE 500 12 70) -—J 1 -1 — Gap A p e rtu re T e st ’c [ON| b v ceo M ax W idth W id th C o n d it io n s mA) (V) R a tin g LE D / S e n so r •f' V CE 1'5 14 4o) P art i s + 250,6 35, PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCHES

2N7334

Abstract: 2N7334 JANTX IRFG110 JANTX2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER | I « R | AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm The HEXFET technology is the key to International

2N7334

Abstract: IRFG110 JANTXV2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRF6110 8N 7334 JA N T X 2N 7334 JA N T X V 2N 7334 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: M IL-S -19500/5S7]

Contextual Info: Data Sheet No. PD-9.396E I“R INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETb [REF: M IL -S -19500/597] 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Vblt, 0.70 Ohm Product Summary <D The HEXFET technology is the key to International

"MC 140" transistor

Abstract: MC 140 transistor transistor mc 140 2N3229 transistor a200 MC 150 transistor RCA TO60 TRANSISTORS
Contextual Info: File No. 50 ^ R F P o w e r T r a n s is t o r s Solid State Division RCA-2N3229 transistor This up to FM, 150 The package from to all is and the silicon intended CW n-p-n for service type. applications at H ig h -P o w e r, frequencies Me . 2N3229 which the

TRANSISTOR MARKING YB 1L

Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
Contextual Info: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738

transistor B324

Abstract: transistor B324 pin out B324 transistor off grid inverter schematics full subtractor circuit nand gates ALI 3105 i203 transistor B304 transistor mxe3
Contextual Info: H o n eyw ell 4551872 HO NE Y WE LL / SS HC20000 ELEK, M IL 03E 00236 D Preliminary HIGH-PERFORMANCE CMOS GATE ARRAY FEATURES • Performance Optimized Series of 1.2-Micron CMOS Gate Arrays 1Proven VLSI Design System VDS Toolkit •Boundary and Internal Scan

2x1 multiplexer

Contextual Info: H O N E YüJELL/SS ELEK-i MIL ~Ü3 D Ë J 4 5 5 1 0 7 2 O O O O S B b 1 "|~ Honeyw ell 4551872 HO NE Y WE LL / SS HC20000 ELEK, M IL 03E 00236 D Preliminary HIGH-PERFORMANCE CMOS GATE ARRAY FEATURES • Performance Optimized Series of 1.2-Micron CMOS Gate Arrays

i202 transistor

Contextual Info: 19-1173; Rev 1;3/97 V M W X IA I 5V, 8-Channel, S erial, 12-B it ADCs w ith 3 V D ig ita l In te rfa c e .Features ♦ 8-Channel Single-Ended or 4-Channel Differential Inputs A 4 -w ire s e ria l in te rfa c e c o n n e c ts d ire c tly to SPl /Microwire™ devices without external logic, and a

MC789P

Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
Contextual Info: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series