I203 TRANSISTOR Search Results

I203 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

I203 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
i203 transistor Abstract: i203 Text: OPTOELECTRONICS - I I OPTICAL CENTERLiNE 500 12 70) -—J 1 -1 — Gap A p e rtu re T e st ’c [ON\| b v ceo M ax W idth W id th C o n d it io n s mA) (V) R a tin g LE D / S e n so r •f' V CE 1'5 14 4o) P art i s + 250,6 35, PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCHES	OCR Scan	OPB804 QVE11233 i203 transistor i203	PDF
2N7334 Abstract: 2N7334 JANTX IRFG110 JANTX2N7334 Text: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER \| I « R \| AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm The HEXFET technology is the key to International	OCR Scan	IRFG110 SN7334 JANTX2N7334 JANTXVSN7334 I-206 IRFG110, 2N7334 I-207 2N7334 JANTX	PDF
2N7334 Abstract: IRFG110 JANTXV2N7334 Text: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRF6110 8N 7334 JA N T X 2N 7334 JA N T X V 2N 7334 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: M IL-S -19500/5S7]	OCR Scan	IRFG110 JANTXV2N7334 MIL-S-19500/5S7] 2N7334 I-207 JANTXV2N7334	PDF
Untitled Abstract: No abstract text available Text: Data Sheet No. PD-9.396E I“R INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETb [REF: M IL -S -19500/597] 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Vblt, 0.70 Ohm Product Summary <D The HEXFET technology is the key to International	OCR Scan	IRFG110 JANTXV2ISI7334 I-207	PDF
"MC 140" transistor Abstract: MC 140 transistor transistor mc 140 2N3229 transistor a200 MC 150 transistor RCA TO60 TRANSISTORS Text: File No. 50 ^ R F P o w e r T r a n s is t o r s Solid State Division RCA-2N3229 transistor This up to FM, 150 The package from to all is and the silicon intended CW n-p-n for service type. applications at H ig h -P o w e r, frequencies Me . 2N3229 which the	OCR Scan	2N3229 RCA-2N3229 2N3229 I2045AS 01AMETER "MC 140" transistor MC 140 transistor transistor mc 140 transistor a200 MC 150 transistor RCA TO60 TRANSISTORS	PDF
TRANSISTOR MARKING YB 1L Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846 Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738	OCR Scan	2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846	PDF
transistor B324 Abstract: transistor B324 pin out B324 transistor off grid inverter schematics full subtractor circuit nand gates ALI 3105 i203 transistor B304 transistor mxe3 Text: H o n eyw ell 4551872 HO NE Y WE LL / SS HC20000 ELEK, M IL 03E 00236 D Preliminary HIGH-PERFORMANCE CMOS GATE ARRAY FEATURES • Performance Optimized Series of 1.2-Micron CMOS Gate Arrays 1Proven VLSI Design System VDS Toolkit •Boundary and Internal Scan	OCR Scan	HC20000 transistor B324 transistor B324 pin out B324 transistor off grid inverter schematics full subtractor circuit nand gates ALI 3105 i203 transistor B304 transistor mxe3	PDF
2x1 multiplexer Abstract: No abstract text available Text: H O N E YüJELL/SS ELEK-i MIL ~Ü3 D Ë J 4 5 5 1 0 7 2 O O O O S B b 1 "\|~ Honeyw ell 4551872 HO NE Y WE LL / SS HC20000 ELEK, M IL 03E 00236 D Preliminary HIGH-PERFORMANCE CMOS GATE ARRAY FEATURES • Performance Optimized Series of 1.2-Micron CMOS Gate Arrays	OCR Scan	HC20000 MIL-M-38510 Comm05 2x1 multiplexer	PDF
i202 transistor Abstract: No abstract text available Text: 19-1173; Rev 1;3/97 V M W X IA I 5V, 8-Channel, S erial, 12-B it ADCs w ith 3 V D ig ita l In te rfa c e .Features ♦ 8-Channel Single-Ended or 4-Channel Differential Inputs A 4 -w ire s e ria l in te rfa c e c o n n e c ts d ire c tly to SPl /Microwire™ devices without external logic, and a	OCR Scan	MAX1202/MAX 12-bit 1202/MAX MAX1202 -p-47pF~ i202 transistor	PDF
MC789P Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P Text: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series	OCR Scan	C300/M 1000/M MC660 C500/M C2100/M C2000 C3000 930/M C200/M C900/M MC789P MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P	PDF