I0127 Search Results

IR135LM06CS02CB

Contextual Info: Preliminary Data Sheet I0127J 09/97 IR135LM06CS02CB FAST RECOVERY DIODE Junction Size: Rectangular 135 x 100 mils Wafer Size: 4" VRRM Class: 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 8EWF.S Series Major Ratings and Characteristics

IR135LM06CS02CB

Contextual Info: Preliminary Data Sheet I0127J 09/97 IR135LM06CS02CB FAST RECOVERY DIODE Junction Size: Rectangular 135 x 100 mils Wafer Size: 4" VRRM Class: 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 8EWF.S Series Major Ratings and Characteristics

Contextual Info: IN-SYSTEM PROGRAMMABLE ANALOG FRONT END CIRCUIT ispPAC30 Introduction to ispPAC 30 A P P L I C AT I O N S Imagine designing your multi-channel data acquisition system using an analog circuit capable of changing its gain and offset, per channel, in microseconds

Contextual Info: F Z J ^7# S G S -T H O M S O N M S M i[ L I@ » [ l] § ST95041 SERIAL ACCESS SPI BUS 4K (512 x 8 EEPROM • 100,000 ERASE/WRITE CYCLES ■ 40 YEARS DATA RETENTION ■ SINGLE 4.5V to 5.5V SUPPLY VOLTAGE ■ SPI BUS COMPATIBLE SERIAL INTERFACE ■ 2 MHz CLOCK RATE MAX

Contextual Info: s» ^ I n u u u • fiiv n u a w ilb ll FREEPORT ILLINOIS A OF 0*VtSi0N rc o . M rc . U S A E X D -A R -3 SWITCH-ENCLOSED H O N EVW CU U ld ilN Q M 3.6 60 ±.,030 2.78 — c o d e ROLLER LEVER ADJUSTABLE THRU360° MTG HOLE AND SLOT FOR .2 5 0 0IA SCREW -HOLE FOR NO. 10 PAN HEAD SCREW 6

AO11

Abstract: X101 X110
Contextual Info: /= # * 7 *» S G S -1 H 0 M S 0 N ST95041 E i t l D g » S l L i ( S 'i r ® K 5 a ( g i SERIAL ACCESS SPI BUS 4K (512 x 8 EEPROM • ■ ■ ■ ■ ■ ■ ■ ■ ■ 100,000 ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE 4.5V to 5.5V SUPPLY VOLTAGE

a10156

Abstract: ST95020
Contextual Info: / = 7 S G S -T H O M S O N ^ 7 M. » » [ I L I » « ! ST95020 SERIAL ACCESS SPI BUS 2K 256 x 8 EEPROM • > ■ ■ > ■ ■ ■ ■ ■ ■ 100,000 ERASE/WRITE CYCLES 10 YEARS DATA RETENTION SINGLE 4.5V to 5.5V SUPPLY VOLTAGE SPI BUS COMPATIBLE SERIAL INTERFACE

Contextual Info: M28F101 1 Mbit 128Kb x8, Bulk Flash Memory • 5V ±10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMING TIME: ^0\ls typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ ■ ■ LOW POWER CONSUMPTION Stand-by Current: 5^A typical