I R 032P Search Results

IR 049P

Abstract: 221PN 236PN 034E 036PH 292PH 28SPN 041P GUP COTO
Contextual Info: 09/11/02 13 :3 5 N O .919 J1 COHBECTOft, BKSranST 1. 1 * 1 C O T P L Ï M G , E L E C T R I C , S O L D E R C O P O R r t A H G B M O U N T TERMTKATION P I H r.KMKH&T. T h i s d r a w i n g H H . - C - 2 6 5 0 0 , T y p e E < lex- c i r c u i t a p p l i c a t i o n s

M37475M4-XXXSP

Abstract: M37476M4-XXXFP MELPS-740 MELPS 740
Contextual Info: baMTflSfl 001715b 750 • M I T H M IT S U B S S H f M IC R O C O M P U T E R S M37475IVS2-XXXSP,&i37475IVI4-XXXSP M 3 7 4 7 5 IV 1 8 -X X X S P ,M 3 7 4 7 6 IV 1 2 -X X X S P /F P I V I3 7 4 7 6 M 4 - X X X S P / F P , M 3 7 4 7 6 iy i8 - X X X S P / F P

A1073

Abstract: sony KSS 123 cxa1073 MAGNETIC SWITCH CXA1073M CXA1073Q CXAI073M multivibtrator 00112m D011223
Contextual Info: _ CXA1073M/Q S O N Y « Read/Write Amplifier for Floppy Disk Drive D escription C X A I0 7 3 M 3 0 pin SOP Plastic C X A 1 0 7 3 M /'Q are IC’s for FDD (Floppy Disk Drive) usage. Functions such as Read, W rite, Erase and supply voltage detection circuits are

DIP014-P-0300D

Abstract: B92 62 diode pa c12 100 12p P050P ip022 TSOP050-P
Contextual Info: 172 MOS Memories M H O 188 CCD Area Image Sensors (C □ □ ) 193 CCD Area/Linear Image Sensors (C □ □ ) 194 CCD Camera Modules/TFT LCD Devices (C D D ) 196 Bipolar ICs (B DD) 197 Discrete Semiconductors (D DD) 212 171 O u tlin e s MOS LSIs (L E O )

SM5* sharp

Abstract: t9816
Contextual Info: SHARP Microcomputer Data Sheet SM5K6/SM5K7 4-Bit Single-Chip Microcomputer FEATURES DESCRIPTION • ROM C apacity The S M 5K 6/5K 7 are C M O S 4-bit single-chip m icro­ com puters incorporating 4-bit parallel processing fu n c ­ tion, serial interface fu nctio n, ROM, RAM , 10-bit A/D

YM12L

Contextual Info: sony . CXK58110OTM/YM : ! S M W 131072-word x 8-bit High Speed CMOS Static RAM D e s c r ip tio n CXK5811OOTM/YM is a 1M bits, 131072 words by 8 bits, CMOS static RAM. It is suitable for portable and battery back-up systems which require extremely small package and low stand-by current.

P028

Abstract: MN15P5402 j321C MN155201 QFH032-P-0707
Contextual Info: □ MN155201 M N155201 1 Type 1 ROM x8~bit 2K 1 RAM (x4-bit) 128 98 1 Num ber ot Instructions 1.0ps (at 4 .5 to 5 .5 V , 8M Hz) • Minimum Instruction Execution Time 4 . Ops (at 2 .0 to 5 .5 V , 2M Hz) 1 Interrupts • RESET • External (Key In te rru p t Is available)

TRS-X

Contextual Info: SM5K3/SM5K4/SM5K5 SHARP Microcomputer Data Sheet 4-Bit Single-Chip Microcomputer FEATURES DESCRIPTION • 2,048 x 8-bits ROM C apacity The S M 5 K 3 /5 K 4 /5 K 5 are C M O S 4 -b it s in g le -c h ip m icrocom puters incorporating 4 -b it parallel processing

MN15P5402

Abstract: MN155402 MN155202 QFH032-P-0707
Contextual Info: □ MN155202/402 1 Type M N 15 5 2 0 2 /4 0 2 1 ROM x8-bit 2 K /4 K 1 RAM (x4-bit) 1 2 8 /1 9 2 M Num ber of Instructions 98 1 .0 ms (at 4 .5 to 5 .5 V , 8M Hz) 1 Minimum Instruction Execution Time 4 .Ops (at 2 .0 to 5 .5 V , 2M Hz) 1 Interrupts •R E S E T

PO3C

Abstract: 5K324 30-PIN 32-PIN P42C QFP036-P-1010 SHARP SM5 SM5* sharp
Contextual Info: SM5K3/SM5K4/SM5K5 SHARP Microcomputer Data Sheet 4-Bit Single-Chip Microcomputer FEATURES DESCRIPTION • 2,048 x 8-bits ROM C apacity T he S M 5 K 3 /5 K 4 /5 K 5 are C M O S 4 -b it s in g le -c h ip m icrocom puters incorporating 4 -b it parallel processing

Contextual Info: CY7C340 EPLD Family 0 CYPRESS Multiple Array Matrix High-Density EPLDs — VHDL simulation ViewSim Features • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions • 0.8-micron double-metal CMOS EPROM technology (CY7C34X)

epm5032dc

Abstract: 5130Q 5128A 74151 waveform 7C340 epld 342B rc 74151
Contextual Info: CY7C340 EPLD Family •= CYPRESS Multiple Array Matrix High-Density EPLDs Features — VHDL sim ulation ViewSim M • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions — Available on PC and Sun platforms

u738

Abstract: 15A12 DD15 MN6576H QFH032-P-0707 sa672
Contextual Info: Panasonic Other MOS LSIs MN6576H Low Power 9-Bit C M O S A/D Converter for Image Processing • Overview Pin Assignment T he M N 6576H is a high-speed 9 -bit C M O S analog-tod ig ital co n v erter fo r im age pro cessin g applications. It u se s a h a lf flash stru c tu re b a se d on c h o p p e r c o m ­

ta31033

Abstract: TA31032P TA31033P ta31033ap ta31032 TA3103
Contextual Info: SPEECH NETWORK ICs SPEECH NETWORK FOR TELEPHONE SET FEATURES • Direct interface w ith receiver dynamic type, electrom agnetic type of low impedance type is possible. • This 1C is able to change over an input from transmitter to an input of dial signal (DTMF signal) and output to

Contextual Info: 30-36 GHz GaAs MMIC Power Amplifier ESAlpha AA032P1-00 Chip C lit lin e F eat ur e s • Single Gate and Drain Biases ■ 27 dBm Output Power at 31 GHz 0.000 0.120 ■ 12 dB Small Signal Gain 0.107 ■ 0.25 im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing

Contextual Info: sontî* CXK584001 TRfl/YI\fl/Rfl/P 524288-word x 8-bit High Speed CMOS Static RAM Description CXK584001TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized extremely low stand-by current and higher data

Ah 55l

Contextual Info: SONY CXK584000TM/YM/M/P|^C7oll0ioll 524288-word x 8-bit High Speed CMOS Static RAM Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524288-word CXK584000TM CXK584000YM 32 pin TSOP Plastic 32 pin TSOP (Plastic) CXK584000M

Contextual Info: SONY CXK5V8512TM 65536-word x - 8 5 L L X /1 0 L L X 8-bit High Speed CMOS Static RAM Description The CXK5V8512TM is a high speed CMOS static RAM organized as 65536-words by 8-b'rts. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

P0820A

Contextual Info: SONY CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by CXK581000ATM CXK581000AYM 32 pin TSOP Plastic 32 pin TSOP (Plastic)

Contextual Info: R1LP0408D Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0104EJ0200 Rev.2.00 2012.5.30 Description The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher

R1LP0408D

Abstract: R1LP0408DSB-5 R1LP0408DSP 032P2S-A R1LP0408DSB-5SI R1LP0408DSB R1LP0408DSP-7SI R10DS0104EJ0200 R1LP0408DSP-5SR R1LP0408DSP-5SI
Contextual Info: R1LP0408D Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0104EJ0200 Rev.2.00 2012.5.30 Description The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher

AN3813K driver circuit

Abstract: diode b83 AN3814K hdd spindle motor AN6666S dc motor 0550 drive 3 phase circuit
Contextual Info: General Purpose Linear ICs • Motor Control Series continued Category Sensorless motordriver Motor speed control Type No. Functions Applications P ack ag e No. AN3813K 5 ± 0 .5 1.5A lOOniA 3-phase half wave drive, Output T r built-in, P G /F G processing circuit built-in. Single phase Hall elem ent input,

CXA1960Q

Abstract: 836 gfp
Contextual Info: SONY I_ C X A 1980Q QQ Dolby B Type Noise Reduction System with Playback Equalizer Description The CXA1980G is an IC designed for use in car stereos. Functions include Dolby B type noise reduction NR , playback equalizer and interval detection between tracks (Music Sensor) into a

Contextual Info: 30-36 GHz GaAs MMIC Power Amplifier ESAlpha AA032P1-00 Features Chip Outline • Single Gate and Drain Biases o ■ 27 dBm Output Power at 31 GHz ■ 12 dB Small Signal Gain ■ 0.25 im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883