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    HZM6.8 Search Results

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    HZM6.8 Price and Stock

    Rochester Electronics LLC HZM6.8FATL

    TRANS VOLTAGE SUPPRESSOR DIODE
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    DigiKey HZM6.8FATL Bulk 1,249
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    Rochester Electronics LLC HZM6.8NB2TL-E

    HZM6.8N - ZENER DIODE
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    DigiKey HZM6.8NB2TL-E Bulk 1,888
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    Rochester Electronics LLC HZM6.8NB1TR-E

    HZM6.8N - ZENER DIODE
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    DigiKey HZM6.8NB1TR-E Bulk 1,888
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    Rochester Electronics LLC HZM6.8MWATL-E

    HZM6.8M - TRANS VOLTAGE SUPPRESS
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    DigiKey HZM6.8MWATL-E Bulk 2,029
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    Rochester Electronics LLC HZM6.8MFATR-E

    TRANS VOLTAGE SUPPRESSOR DIODE
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    DigiKey HZM6.8MFATR-E Bulk 580
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    HZM6.8 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HZM6.8FA Hitachi Semiconductor Silicon Epitaxial Planar Zener Diode for Surge Absorb Original PDF
    HZM68FA Hitachi Semiconductor Silicon Epitaxial Planar Zener Diode for Surge Absorb Original PDF
    HZM6.8FA Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    HZM6.8MFA Hitachi Semiconductor Surge Absorption Diodes Original PDF
    HZM68MFA Hitachi Semiconductor Silicon Planar Zener Diode for Surge Absorb Original PDF
    HZM6.8MFA Renesas Technology Silicon Planar Zener Diode for Surge Absorb Original PDF
    HZM6.8MFATL-E Renesas Technology TVS - Diodes, Circuit Protection, TVS DIODE 3.5VWM MPAK5 Original PDF
    HZM6.8MWA Hitachi Semiconductor Surge Absorption Diodes Original PDF
    HZM6.8MWA Renesas Technology Silicon Planar Zener Diode for Surge Absorb Original PDF
    HZM6.8MWA Renesas Technology SMD, Dual Zener Diode for Surge Absorb, 6,8V, Z-diode (operation in reverse direction), Stamping Code:68M Original PDF
    HZM6.8MWATL-E Renesas Technology TVS - Diodes, Circuit Protection, TVS DIODE 3.5VWM 3MPAK Original PDF
    HZM6.8N Hitachi Semiconductor Silicon Epitaxial Planar Zener Diode for Stabilizer Original PDF
    HZM6.8N Renesas Technology Original PDF
    HZM6.8N Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    HZM6.8NB Renesas Technology Original PDF
    HZM6.8NB Renesas Technology Silicon Epitaxial Planar Zener Diode for Stabilizer Original PDF
    HZM6.8NB1 Renesas Technology Original PDF
    HZM6.8NB1 Renesas Technology Silicon Epitaxial Planar Zener Diode for Stabilizer Original PDF
    HZM6.8NB2 Renesas Technology Silicon Epitaxial Planar Zener Diode for Stabilizer Original PDF
    HZM6.8NB2 Renesas Technology Original PDF

    HZM6.8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3.5V zener diode

    Abstract: ADE-208-442A high speed Zener Diode
    Text: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A Z Rev 1 Features • • HZM6.8FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information


    Original
    PDF ADE-208-442A 150pF, 3.5V zener diode high speed Zener Diode

    68A diode

    Abstract: Hitachi DSA00776 ADE-208-442A HZM6.8FA
    Text: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A Z Rev 1 September 1996 Features • • HZM6.8FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.


    Original
    PDF ADE-208-442A 150pF, 68A diode Hitachi DSA00776 HZM6.8FA

    monolithic COUNTRY CODE

    Abstract: No abstract text available
    Text: HZM6.8Z4MWA Silicon Planar Zener Diode for Surge Absorb REJ03G0369-0100 Rev.1.00 Oct 01, 2004 Features • HZM6.8Z4MWA has two devices in a monolithic, and can absorb surge. • Low capacitance C = 4.0 pF Typ / 4.5 pF max and can protect ESD of signal line.


    Original
    PDF REJ03G0369-0100 Unit2607 monolithic COUNTRY CODE

    Untitled

    Abstract: No abstract text available
    Text: HZM6.8Z4MFA Silicon Planar Zener Diode for Surge Absorb REJ03G0203-0100Z Rev.1.00 Mar.29.2004 Features • HZM6.8Z4MFA has four devices in a monolithic, and can absorb surge. • Low capacitance C = 4.0 pF Typ / 4.5 pF max and can protect ESD of signal line.


    Original
    PDF REJ03G0203-0100Z

    mark 68m

    Abstract: HZM6.8MFA
    Text: HZM6.8MFA Silicon Planar Zener Diode for Surge Absorb REJ03G1209-0200 Previous: ADE-208-833A Rev.2.00 Jun 13, 2005 Features • HZM6.8MFA has four devices in a monolithic, and can absorb surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.


    Original
    PDF REJ03G1209-0200 ADE-208-833A) PLSP0005ZC-A S5-900 Unit2607 mark 68m HZM6.8MFA

    mark 68m

    Abstract: SC-59A
    Text: HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb REJ03G1210-0200 Previous: ADE-208-851A Rev.2.00 Jun 13, 2005 Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.


    Original
    PDF REJ03G1210-0200 ADE-208-851A) PLSP0003ZC-A Unit2607 mark 68m SC-59A

    Hitachi DSA00359

    Abstract: No abstract text available
    Text: HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb ADE-208-783A Z Rev 1 Nov. 1999 Features • HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C=25pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.


    Original
    PDF ADE-208-783A Hitachi DSA00359

    SC-59A

    Abstract: Hitachi DSA00359
    Text: HZM6.8ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-613A Z Rev 1 Jan. 1999 Features • HZM6.8ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C=25pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.


    Original
    PDF ADE-208-613A SC-59A Hitachi DSA00359

    mark 68m

    Abstract: HZM6.8MFA
    Text: HZM6.8MFA Silicon Planar Zener Diode for Surge Absorb REJ03G1209-0200 Previous: ADE-208-833A Rev.2.00 Jun 13, 2005 Features • HZM6.8MFA has four devices in a monolithic, and can absorb surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.


    Original
    PDF REJ03G1209-0200 ADE-208-833A) PLSP0005ZC-A mark 68m HZM6.8MFA

    mark 68m

    Abstract: DSA003644
    Text: HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb ADE-208-851A Z Rev.1 Nov. 2001 Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information


    Original
    PDF ADE-208-851A D-85622 D-85619 mark 68m DSA003644

    DSA003643

    Abstract: No abstract text available
    Text: HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb ADE-208-783A Z Rev. 1 Nov. 1999 Features • HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C=25pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.


    Original
    PDF ADE-208-783A 15ollyer DSA003643

    ADE-208-442A

    Abstract: Hitachi DSA00359
    Text: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A Z Rev 1 September 1996 Features • HZM6.8FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.


    Original
    PDF ADE-208-442A Hitachi DSA00359

    Hitachi DSA001653

    Abstract: No abstract text available
    Text: HZM6.8ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-614A Z Rev 1 Dec. 1, 1998 Features • HZM6.8ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C=25pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.


    Original
    PDF ADE-208-614A Hitachi DSA001653

    Hitachi DSA00359

    Abstract: HZM6.8MFA
    Text: HZM6.8MFA Silicon Planar Zener Diode for Surge Absorb ADE-208-833 Z Rev 0 Dec. 1999 Features • HZM6.8MFA has four devices in a monolithic, and can absorb surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information


    Original
    PDF ADE-208-833 Hitachi DSA00359 HZM6.8MFA

    Hitachi DSA00280

    Abstract: No abstract text available
    Text: HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb ADE-208-783B Z Rev.2 Nov. 2001 Features • HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 25 pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.


    Original
    PDF ADE-208-783B Hitachi DSA00280

    Untitled

    Abstract: No abstract text available
    Text: HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb REJ03G1211-0300 Previous: ADE-208-783B Rev.3.00 Jun 14, 2005 Features • HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 25 pF max) and can protect ESD of signal line.


    Original
    PDF REJ03G1211-0300 ADE-208-783B) PLSP0005ZC-A

    mark 68

    Abstract: No abstract text available
    Text: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-442A Z Rev 1 Features • HZM6.8FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.


    OCR Scan
    PDF ADE-208-442A mark 68

    Untitled

    Abstract: No abstract text available
    Text: HZM6.8ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-613A Z Rev 1 Jan. 1999 Features • HZM6.8ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C=25pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.


    OCR Scan
    PDF ADE-208-613A 40815HITEC

    Untitled

    Abstract: No abstract text available
    Text: HZM6.8ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-614 Z Rev 0 April 1, 1998 Features • HZM6.8ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C=25pF max) and can protect ESD of signal line.


    OCR Scan
    PDF ADE-208-614

    Untitled

    Abstract: No abstract text available
    Text: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-442A Z Rev 1 September 1996 Features • HZM6.8FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.


    OCR Scan
    PDF ADE-208-442A 150pF,

    Untitled

    Abstract: No abstract text available
    Text: HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-351 Z Rev. 0 May. 1995 Features • HZM6.8WA has two devices, and can absorb external + and - surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.


    OCR Scan
    PDF ADE-208-351 150pF,

    Untitled

    Abstract: No abstract text available
    Text: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI A D E -208-442A Z Rev 1 Features • HZM6.8FA has four devices, and can absorb external + and -Surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.


    OCR Scan
    PDF -208-442A 150pF,

    Untitled

    Abstract: No abstract text available
    Text: ADE-208-351 Z HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI Features Rev. 0 May. 1995 Outline • HZM6.8WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.


    OCR Scan
    PDF ADE-208-351 SC-59A

    Untitled

    Abstract: No abstract text available
    Text: ADE-208-351 Z HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI Features Rev. 0 May. 1995 Outline • HZM6.8WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.


    OCR Scan
    PDF ADE-208-351 SC-59A