HZ12B Search Results

Contextual Info: H S AD C85 Sipex D ata Converter Line 12-Bit, 10µS H ybrid AD C FEA TURES • –55ºC to +125ºC Operation • M IL-STD-883 Processing • 10 µS Conversion Time • Low Power, 1.32W max • Replacement for A DC85/84 and • A DC-HX12B/HZ12B DESCRIPTION

Contextual Info: A D C -H X , A D C -H Z S e rie s □M n 12-Bit, Analog-toDigital Converters FEATURES • • • • • 12-Bit resolution 8-0 r 20-Microseconds conversions 5 Input ranges Internal high Z buffer Short-cycle operation GENERAL DESCRIPTION The ADC-HX12B and ADC-HZ12B are self-contained, high

Contextual Info: □M n ADC-HX, ADC-HZ Series 12-Bit, Analog-toDigital Converters FEATURES • • • • • 12-Bit resolution 8-or 20-Microseconds conversions 5 Input ranges Internal high Z buffer Short-cycle operation GENERAL DESCRIPTION The ADC-HX12B and ADC-HZ12B are self-contained, high

converters

Abstract: adc581 dj rm ADC85
Contextual Info: H S AD C85 D ata Converter Line 12-Bit, 10µS H ybrid AD C FEATURES • –55ºC to +125ºC Operation • M IL-STD-883 Processing • 10 µS Conversion Time • Low Power, 1.32W max • Replacement for A DC85/84 and A DC-HX12B/HZ12B DESCRIPTION The HS A DC85 is specifically designed to replace

DIODE B3N

Abstract: B2n diode 4.7 B2 zener a3 6 zener B2 Zener HZ22-2 zener diode B2 Zener Diode C3 5 B1 5.6 zener GRZZ0002ZB-A
Contextual Info: HZ-N Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1625-0100 Rev.1.00 Mar 25, 2008 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

adc581

Abstract: ADC85-12 ADC85 ADC85B ADC85C HSADC85 adc hz12b
Contextual Info: Hybrid Systems W W CORPORATION HS ADC85 12-Bit, 10/aS Hybrid ADC FEATURES • -5 5 °C to +125°C Operation ■ M IL-S T D -883 Processing ■ 10/iS Conversion Time ■ Low Power, 1.32W max ■ Replacement for A D C 85/84 and A D C -H X 12B /H Z12B DESCRIPTION

HZ15L2

Abstract: HZ7LB-2 HZ11LC3 HZ16L-2 HZ16L3 HZ24-2L HZ24L HZ11LC2 HZ30-2L HZ7LB-3
Contextual Info: HZ…L Series SILICON EPITAXIAL PLANER ZENER DIODES FOR LOW NOISE APPLICATION Features • Diode noise level of this series is approximately 1/3 – 1/10 lower than the Hz series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ECG 177 zener diode

Abstract: B2 Zener HZ6L Hitachi DSA002721 Zener do35 marking code a2 Zener do35 marking code 9 a2
Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev 1 November 1996 Features • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HZ9LB3

Abstract: HZ11LC2 HZ36L1 HZ9LC-3 zener 7.2 V HZ6L
Contextual Info: HZ…L Series SILICON EPITAXIAL PLANER ZENER DIODES Max. 0.5 for low noise application Min. 27.5 Max. 1.9 Features • Diode noise level of this series is approximately 1/3 – 1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum

HZ15L2

Abstract: HZ16L-2 HZ6LA-1 HZ6LB-1 HZ6B2L HZ11LC2 HZ36L1 HZ11LA-1
Contextual Info: HZ…L Series SILICON EPITAXIAL PLANER ZENER DIODES FOR LOW NOISE APPLICATION Features • Diode noise level of this series is approximately 1/3 – 1/10 lower than the Hz series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

HZ9B2L

Abstract: HZ6C1L HZ6C semiconductor HZ18 ZENER HZ9A1L HZ24-2L HZ6C3L HZ9A2L HZ11A2L HZ7A3L
Contextual Info: HZ-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0182-0300 Rev.3.00 Nov.06.2007 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized

HZ11

Abstract: HZ12 HZ15 HZ16 HZ18 HZ20 HZ22 HZ24 5.1 v zener
Contextual Info: BL GALAXY ELECTRICAL HZ - - - SERIES ZENER DIODES POWER DISSIPATION: 500 mW DO-35 GLASS FEATURES Silicon planar power zener diodes Standard zener voltage tolerance is ±2%. Other zener voltage and tolerances are available upon request. MECHANICAL DATA Case:DO-35, glass case

Contextual Info: S i PC o 'D oe X ratco riV HS ADC85 O'DOiatc SIGNAL PROCESSING EXCELLEMCE 12-BIT, 10 liS HYBRID ADC FEATURES • ■ ■ ■ ■ -55°C to +125°C O pe ra tion Ml L-STD-883 Processing 10 nS Conversion Time Low Power, 1.32W m ax R e pla cem e nt for ADC85/84 a n d

Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev 1 Features • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

zener diode A3

Abstract: a3 6 zener zener 5.1 B2 ZENER a3 Zener Diode C3 5 4.7 B2 zener ADE-208-117A zener diode 3.0 b2 30 B2 zener zener diode 2.7 b2
Contextual Info: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-117A Z Rev 1 Features • • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.

DIODE B3N

Abstract: B2n diode HZ-6B-2 GRZZ0002ZB-A HZ11 HZ12 HZ15 HZ16 HZ18 HZ20
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BZX12

Abstract: BZX5V6 BZX5V1 BZX33 BZX18 BZX9V1 BZX4V7 BZX6V8 BZX10 BZX11
Contextual Info: ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm Features: 2.0Max Very sharp reverse characteristic Low reverse current level Very high stability 26.0Min 0.5Max Low noise Available with tighter tolerances 3.9Max CATHODE MARK Applications Voltage stabilization

smd glass zener diode color codes

Abstract: TRANSISTOR SMD MARKING CODE 1Bp transistor smd 1Bp smd glass diode color codes RD zener diode hitachi tuffy HZT33 equivalent maple TA11 JISC6484 2l TRANSISTOR SMD MARKING CODE
Contextual Info: Diode Zener Diodes 1. Zener Diode Characteristics Generally, when a junction is reverse biased, a breakdown phenomenon appears abruptly at a certain voltage. This phenomenon is called “zener breakdown” or “avalanche breakdown”. In silicon diodes the zener breakdown appears

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

HZ5B-20

Abstract: NEC 16T
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid