Untitled
Abstract: No abstract text available
Text: Control No. Tentative Specification Preliminary 1. 900MHz Band 90deg Chip Hybrid Coupler TYPE No: HGC5021-HYB0900S RoHS correspondence article 0.3 2 1 2 0.5 G G 021 4.5 1.2 G G G G 1.2 G HGC-5021-B Established on Mar 27, 2013 2. Appearance and Construction
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900MHz
90deg
HGC5021-HYB0900S
HGC-5021-B
25degC)
125degC)
35degC
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Untitled
Abstract: No abstract text available
Text: Control No. Product Information : GSC-0552-K Established on Aug 24, 2011 1. 900MHz Band 90deg Chip Hybrid Coupler TYPE No: GSC552-HYB0900A RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 3.2 1 0.3 1 2 2 1.2 0.5 G H52 G 4.5
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GSC-0552-K
900MHz
90deg
GSC552-HYB0900A
25degC)
35degC
125deg
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Untitled
Abstract: No abstract text available
Text: Tentative Specification Preliminary Control No. : HGC-03062-C Established on Jun 19, 2013 1. 900MHz Band 90deg Chip Hybrid Coupler 1.1 TYPE No. : HGC3062-HYB0900 RoHS correspondence article 2. Appearance and Construction 2.1 Dimension (Unit: mm) 0.4 5.0
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HGC-03062-C
900MHz
90deg
HGC3062-HYB0900
25degC)
35degC
125degC)
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GSC362
Abstract: soshin GSC362-HYB0900
Text: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 GSC362-HYB0900 800MHz Band 90Deg. Chip Hybrid Coupler Compact & High power capability. Application for RF power amplifier Base station Characteristics GSC362-HYB0900 Impedance 50 ohm Nominal Frequency Range 815-960MHz
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GSC362-HYB0900
800MHz
90Deg.
815-960MHz
500pcs/Reel
jp/cg900
GSC362-H.
GSC362
soshin
GSC362-HYB0900
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hybrid coupler 3dB 90
Abstract: No abstract text available
Text: Control No. Product Information : GSC-0552-K Established on Aug 24, 2011 1. 900MHz Band 90deg Chip Hybrid Coupler TYPE No: GSC552-HYB0900A RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 3.2 1 0.3 1 2 2 1.2 0.5 G H52 G 4.5
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GSC-0552-K
900MHz
90deg
GSC552-HYB0900A
25degC)
35degC
125deg
hybrid coupler 3dB 90
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GSC262-HYB0900
Abstract: GSC262 soshin
Text: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 GSC262-HYB0900 900MHz Band 90Deg. Chip Hybrid Coupler Compact & High power capability. Application for RF power amplifier Base station Characteristics GSC262-HYB0900 Impedance 50 ohm Nominal Frequency Range 815-960MHz
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GSC262-HYB0900
900MHz
90Deg.
815-960MHz
1000pcs/Reel
jp/cg900
GSC262-H.
GSC262-HYB0900
GSC262
soshin
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Untitled
Abstract: No abstract text available
Text: Document Number: MD8IC925N Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage
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MD8IC925N
MD8IC925N
MD8IC925NR1
MD8IC925GNR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage
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MDE6IC9120N
MDE6IC9120N/GN
32employees,
MDE6IC9120NR1
MDE6IC9120GNR1
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SEMICONDUCTOR J601
Abstract: Soshin GSC362 J295 A114 A115 AN1977 AN1987 C101 JESD22 MDE6IC9120GNR1
Text: Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage
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MDE6IC9120N
MDE6IC9120N/GN
MDE6IC9120NR1
MDE6IC9120GNR1
SEMICONDUCTOR J601
Soshin GSC362
J295
A114
A115
AN1977
AN1987
C101
JESD22
MDE6IC9120GNR1
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