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Untitled Abstract: No abstract text available Text: HY5117404B,HY5116404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process	Original	PDF	HY5117404B HY5116404B
116404B Abstract: HY5117404BT Text: - H Y U N D A I • HY5117404B,H Y5116404B 4Mx4, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process	OCR Scan	PDF	HY5117404B Y5116404B AO-A11) 116404B HY5117404BT
HY5116400BT Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC	OCR Scan	PDF	256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ
Untitled Abstract: No abstract text available Text: HY5116404B Series »HYUNDAI 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating	OCR Scan	PDF	HY5116404B HY5116404B 1AD49-10-MAY95 HY5116404BJ HY5116404BSLJ HY5116404BT HY5116404BSLT
s69 lf Abstract: 0h07 DHR38 Text: •HYUNDAI HY5116404B Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION T h e H Y 5 1 1 6 4 0 4 B is th e new g e n e ra tio n and fa s t d y n a m ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it. T h e H Y 5 1 1 6 4 0 4 B u tiliz e s H y u n d a i’s C M O S silic o n g a te p ro c e s s te c h n o lo g y a s a d v a n c e d c ircu it te c h n iq u e s to p ro v id e w id e o p eratin g	OCR Scan	PDF	HY5116404B ila2600 1AD49-10-MAY95 HY5116404BJ HY5116404BSLJ HY5116404BT HY5116404BSLT HY5116404BR HY5116404BSLR s69 lf 0h07 DHR38
HY5117404 Abstract: No abstract text available Text: “H Y U N D A I HY5117404B, HY5116404B 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -b it configuration with Extended Data O ut m ode C M O S DRAMs. Extended Data Out m ode	OCR Scan	PDF	HY5117404B, HY5116404B HY5117404BJ HY5117404BSLJ HY5117404BT HY5117404BSLT HY5116404BJ HY5116404BSLJ Y5116404BT HY5116404BSLT HY5117404
HY51V18164 Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC	OCR Scan	PDF	256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ