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    HY5116404B Search Results

    HY5116404B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY5116404B Hyundai 4Mx4, Extended Data Out mode Original PDF

    HY5116404B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HY5117404B,HY5116404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY5117404B HY5116404B

    HY5116404B

    Abstract: HYM564404B HYM564404BNG HYM564404BTNG
    Text: HYM564404B N-Series Buffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM564404B N-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5116404B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168


    Original     		PDF HYM564404B 4Mx64 4Mx64-bit HY5116404B 16-bit HYM564404BNG/BTNG 168-Pin HYM564404BNG HYM564404BTNG

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original     		PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT

    Untitled

    Abstract: No abstract text available
    Text: HY5116404B Series »HYUNDAI 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116404B HY5116404B 1AD49-10-MAY95 HY5116404BJ HY5116404BSLJ HY5116404BT HY5116404BSLT

    s69 lf

    Abstract: 0h07 DHR38
    Text: •HYUNDAI HY5116404B Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION T h e H Y 5 1 1 6 4 0 4 B is th e new g e n e ra tio n and fa s t d y n a m ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it. T h e H Y 5 1 1 6 4 0 4 B u tiliz e s H y u n d a i’s C M O S silic o n g a te p ro c e s s te c h n o lo g y a s a d v a n c e d c ircu it te c h n iq u e s to p ro v id e w id e o p eratin g


    OCR Scan     		PDF HY5116404B ila2600 1AD49-10-MAY95 HY5116404BJ HY5116404BSLJ HY5116404BT HY5116404BSLT HY5116404BR HY5116404BSLR s69 lf 0h07 DHR38

    HY5117404

    Abstract: No abstract text available
    Text: “H Y U N D A I HY5117404B, HY5116404B 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -b it configuration with Extended Data O ut m ode C M O S DRAMs. Extended Data Out m ode


    OCR Scan     		PDF HY5117404B, HY5116404B HY5117404BJ HY5117404BSLJ HY5117404BT HY5117404BSLT HY5116404BJ HY5116404BSLJ Y5116404BT HY5116404BSLT HY5117404

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		PDF HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B

    116404B

    Abstract: HY5117404BT
    Text: - H Y U N D A I • HY5117404B,H Y5116404B 4Mx4, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF HY5117404B Y5116404B AO-A11) 116404B HY5117404BT

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


    OCR Scan     		PDF 256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ

    HY514260

    Abstract: HY5117404A 164-04A 4m 300mil
    Text: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1


    OCR Scan     		PDF HY531000A HY534256A 256KX8 HY512800 HY512264 HY5120 6404A HY5116404B HY51V16404A HY51V16404B HY514260 HY5117404A 164-04A 4m 300mil

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 7 4 0 4 B ,H Y 5 1 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration w ith Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process


    OCR Scan     		PDF

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ