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    Text: HY2N65T / HY2N65FT 650V / 2A N-Channel Enhancement Mode MOSFET 650V, RDS ON =4.6W@VGS=10V, ID=1A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current


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    HY2N65T HY2N65FT O-220AB ITO-220AB 2002/95/EC O-220AB ITO-220AB MIL-STD-750 HY2N65T 2N65T PDF