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    F1687

    Abstract: No abstract text available
    Text: HWF1687YC HSXAWAVS Medium Power GaAs FET September 1998 Rev.B Features • Output Power • High Gain PidB=31.5dBm typ. @2.4GHz Outline Drawing Gl= 16dB(typ.)@2.4GHz • High Efficiency • High Linearity Unit : £ gn Thickness: 53 i 860 Tladd =45%(typ.)@2.4GHz


    OCR Scan     		PDF HWF1687YC 46dBm F1687Y F1687