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    SN65HVD10P Texas Instruments 3.3 V Half-duplex RS-485 Transceiver, 32Mbps 8-PDIP -40 to 85 Visit Texas Instruments Buy
    SN65HVD1050DR Texas Instruments High-Speed CAN Transceiver with Silent Mode 8-SOIC -40 to 125 Visit Texas Instruments Buy
    SN65HVD11P Texas Instruments 3.3V Differential Transceiver 8-PDIP -40 to 85 Visit Texas Instruments Buy
    SN65HVD1176DR Texas Instruments PROFIBUS RS-485 Transceiver 8-SOIC -40 to 85 Visit Texas Instruments Buy
    SN65HVD1780D Texas Instruments 70-V Fault-Protected RS-485 Transceiver 8-SOIC -40 to 105 Visit Texas Instruments Buy
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    HVD1 Price and Stock

    Texas Instruments THVD1500D

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    Texas Instruments THVD1520DR

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    Texas Instruments THVD1512DGSR

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    Texas Instruments THVD1410DR

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    Texas Instruments SN65HVD1793D

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    HVD1 Datasheets (59)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HVD10 International Semiconductor DIODE STANDARD RECOVERY RECTIFIER 10000V 0.025A 2HV Scan PDF
    HVD10 International Semiconductor HIGH VOLTAGE RECTIFIER ASSEMBLIES, Standard Recovery Scan PDF
    HVD10 International Semiconductor High Voltage Rectifier Assemblies Scan PDF
    HVD12 International Semiconductor DIODE STANDARD RECOVERY RECTIFIER 12000V 0.025A 2HV Scan PDF
    HVD12 International Semiconductor HIGH VOLTAGE RECTIFIER ASSEMBLIES, Standard Recovery Scan PDF
    HVD12 International Semiconductor High Voltage Rectifier Assemblies Scan PDF
    HVD131 Hitachi Semiconductor Silicon Epitaxial Planar Pin Diode for High Frequency Switching Original PDF
    HVD131 Renesas Technology Original PDF
    HVD131 Renesas Technology Silicon Epitaxial Planar Pin Diode for Antenna Switching Original PDF
    HVD131-E Renesas Technology DIODE PIN SWITCH 65V 2SFP Original PDF
    HVD132 Hitachi Semiconductor Silicon Epitaxial Planar Pin Diode for High Frequency Switching Original PDF
    HVD132 Renesas Technology Original PDF
    HVD132 Renesas Technology Silicon Epitaxial Planar Pin Diode for Antenna Switching Original PDF
    HVD132-E Renesas Technology DIODE PIN SWITCH 65V 2SFP Original PDF
    HVD133 Hitachi Semiconductor Silicon Epitaxial Planar Pin Diode for High Frequency Switching Original PDF
    HVD133 Renesas Technology Original PDF
    HVD133A Renesas Technology Silicon Epitaxial Planar Pin Diode Original PDF
    HVD133A-E Renesas Technology DIODE PIN SWITCH 30V 2SFP Original PDF
    HVD135 Hitachi Semiconductor Silicon Epitaxial Planar Pin Diode for High Frequency Switching Original PDF
    HVD135 Renesas Technology Original PDF

    HVD1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification HVD142 SOD-123 Unit: mm 2.7 +0.1 0.55-0.1 +0.1 -0.1 +0.05 1.1-0.05 +0.1 1.6-0.1 Features Low capacitance. C = 0.35 pF max Low forward resistance. (rf=1.5 +0.1 3.7-0.1 max) 0.35 +0.05 0.1-0.02 0.50 0.1max A b s o lu te M a x im u m R a tin g s T a = 2 5


    Original     		HVD142 OD-123 PDF

    HITACHI RF APPLICATION

    Abstract: HVD141 DSA003637
    Text: HVD141 Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-1087 Z Rev.0 Jan. 2001 Features • Low capacitance. (C = 0.82 pF max) • Low forward resistance. (rf = 0.8 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.


    Original     		HVD141 ADE-208-1087 HITACHI RF APPLICATION HVD141 DSA003637 PDF

    HVD144A

    Abstract: PUSF0002ZB-A diode mark T7
    Text: HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0429-0200 Rev.2.00 Sep 21, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.80 Ω max) Low operation current.


    Original     		HVD144A REJ03G0429-0200 PUSF0002ZB-A HVD144A PUSF0002ZB-A diode mark T7 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0429-0200 Rev.2.00 Sep 21, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.80 Ω max) Low operation current.


    Original     		HVD144A REJ03G0429-0200 PUSF0002ZB-A PDF

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


    Original     		HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent PDF

    Hitachi DSA002725

    Abstract: No abstract text available
    Text: HVD132 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-830A Z Rev.1 Sep. 2000 Features • Low capacitance. (C = 0.5 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.


    Original     		HVD132 ADE-208-830A HVD132 Hitachi DSA002725 PDF

    Hitachi DSA002725

    Abstract: No abstract text available
    Text: HVD131 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-832A Z Rev.1 Sep. 2000 Features • Low capacitance. (C = 0.8 pF max) • Low forward resistance. (rf = 1.0 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.


    Original     		HVD131 ADE-208-832A HVD131 Hitachi DSA002725 PDF

    HVD135

    Abstract: DSA003645
    Text: HVD135 Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-948 Z Rev. 0 Jul. 2000 Features • Adopting the trench structure improves low capacitance.(C = 0.6 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Low operation current.


    Original     		HVD135 ADE-208-948 HVD135 DSA003645 PDF

    HVA23

    Abstract: AMF 4.0 HV25 HV-D15 HVC12 HVC20 HVD08 HVD10 HVD12 HVD20
    Text: HIGH VOLTAGE RECTIFIER ASSEMBLIES, Standard Recovery is t Part N u m b er Averag e R ectified C t W e i U at T ,- 5 0 'C P t a k R everse V o ltage PR V ÍVòlta* HVD08 HVD-IO HVD12 HVD15 HVD20 8,000 10,000 20.000 2 5 .0 0 0 3 0 .0 0 0 HV5 HV7.5 HV10 HV12.5


    OCR Scan     		HVD08 HVD10 HVD12 HVD15 HVD20 HVD25 HVD30 HVD35 HVC12 HVC15 HVA23 AMF 4.0 HV25 HV-D15 HVC20 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVD138A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0426-0100 Previous: ADE-208-1589 Rev.1.00 Dec 07, 2004 Features • • • • Adopting the trench structure improves low capacitance.(C = 0.85 pF max) Low forward resistance. (rf = 1.1 Ω max)


    Original     		HVD138A REJ03G0426-0100 ADE-208-1589) HVD138A 125echnology Unit2607 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVD142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0428-0100 Previous: ADE-208-1590 Rev.1.00 Nov 26, 2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max)


    Original     		HVD142A REJ03G0428-0100 ADE-208-1590) HVD142A 12echnology Unit2607 PDF

    HVD144A

    Abstract: MARK T7
    Text: HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0429-0100 Previous: ADE-208-1591 Rev.1.00 Nov 26, 2004 Features • • • • Adopting the trench structure improves low capacitance.(C = 0.43 pF max) Low forward resistance. (rf = 1.80 Ω max)


    Original     		HVD144A REJ03G0429-0100 ADE-208-1591) Unit2607 HVD144A MARK T7 PDF

    HVD145

    Abstract: Hitachi DSA0047
    Text: HVD145 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-1507A Z Rev.1 Jun. 2002 Features • Low capacitance.(C = 0.45 pF max) • Low forward resistance. (rf = 1.8 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.


    Original     		HVD145 ADE-208-1507A D-85622 D-85619 HVD145 Hitachi DSA0047 PDF

    HVD142A

    Abstract: PUSF0002ZB-A mark t6
    Text: HVD142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0428-0200 Rev.2.00 Sep 21, 2005 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)


    Original     		HVD142A REJ03G0428-0200 PUSF0002ZB-A HVD142A PUSF0002ZB-A mark t6 PDF

    DIODE SMD 10 25 t5

    Abstract: SMD MARKING T5 smd rf transistor marking smd transistor t5 HVD145 smd 5 pin T5 marking DIODE SMD T5
    Text: Diodes SMD Type Silicon Epitaxial Planar Pin Diode HVD145 SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features An optimal solution for antenna switching in mobile phones. +0.1 3.7-0.1 Low capacitance. C = 0.45 pF max max) 0.50


    Original     		HVD145 OD-123 DIODE SMD 10 25 t5 SMD MARKING T5 smd rf transistor marking smd transistor t5 HVD145 smd 5 pin T5 marking DIODE SMD T5 PDF

    marking t2

    Abstract: diode smd marking T2 smd rf transistor marking HVD142
    Text: Diodes SMD Type Silicon Epitaxial Planar Pin Diode HVD142 SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Low capacitance. C = 0.35 pF max Low forward resistance. (rf=1.5 +0.1 3.7-0.1 max) 0.35 +0.05 0.1-0.02 0.50 0.1max


    Original     		HVD142 OD-123 marking t2 diode smd marking T2 smd rf transistor marking HVD142 PDF

    Hitachi DSA00280

    Abstract: No abstract text available
    Text: HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-1591 Z Rev.0 Sep. 2002 Features • Adopting the trench structure improves low capacitance.(C = 0.43 pF max) • Low forward resistance. (rf = 1.80 Ω max) • Low operation current.


    Original     		HVD144A ADE-208-1591 HVD144A Hitachi DSA00280 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVD131 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0424-0200 Previous: ADE-208-832A Rev.2.00 Oct 29, 2004 Features • Low capacitance. (C = 0.8 pF max) • Low forward resistance. (rf = 1.0 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.


    Original     		HVD131 REJ03G0424-0200 ADE-208-832A) HVD131 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVD191 Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator REJ03G0015-0200 Rev.2.00 Jan 20, 2006 Features • Low capacitance. C = 0.37 pF max • Low forward resistance. (rf = 2.5 Ω max) • Super small Flat Lead Package (SFP) is suitable for surface mount design.


    Original     		HVD191 REJ03G0015-0200 HVD191 PUSF0002ZB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: HVD132 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0425-0200 Previous: ADE-208-830A Rev.2.00 Oct 29, 2004 Features • Low capacitance. (C = 0.5 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.


    Original     		HVD132 REJ03G0425-0200 ADE-208-830A) HVD132 PDF

    HVD136

    Abstract: DSA003645
    Text: HVD136 Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-949 Z Rev. 0 Jul. 2000 Features • Adopting the trench structure improves low capacitance.(C = 0.45 pF max) • Low forward resistance. (rf = 2.5 Ω max) • Low operation current.


    Original     		HVD136 ADE-208-949 HVD136 DSA003645 PDF

    HVD131

    Abstract: No abstract text available
    Text: HVD131 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0424-0200 Previous: ADE-208-832A Rev.2.00 Oct 29, 2004 Features • Low capacitance. (C = 0.8 pF max) • Low forward resistance. (rf = 1.0 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.


    Original     		HVD131 REJ03G0424-0200 ADE-208-832A) Unit2607 HVD131 PDF

    mark code t4 diode

    Abstract: D 1413 transistor HVD144 DSA003640
    Text: HVD144 Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-1413 Z Rev.0 Sep. 2001 Features • Adopting the trench structure improves low capacitance.(C = 0.45 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Low operation current.


    Original     		HVD144 ADE-208-1413 D-85622 D-85619 mark code t4 diode D 1413 transistor HVD144 DSA003640 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVD148 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0210-0100Z Rev.1.00 Apr.05.2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.37 pF max Low forward resistance. (rf = 2.5 Ω max)


    Original     		HVD148 REJ03G0210-0100Z PDF