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    HUF75339G3 Price and Stock

    onsemi HUF75339G3

    MOSFET N-CH 55V 75A TO247-3
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    DigiKey HUF75339G3 Tube
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    Rochester Electronics LLC HUF75339G3

    MOSFET N-CH 55V 75A TO247-3
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    DigiKey HUF75339G3 Tube 268
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    Fairchild Semiconductor Corporation HUF75339G3

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    Bristol Electronics HUF75339G3 32
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    Quest Components HUF75339G3 25
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    Rochester Electronics HUF75339G3 3,009 1
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    Fairchild Semiconductor Corporation HUF75339G3_NL

    HUF75339 - 75A, 55V, 0.012ohm, N-Channel Power MOSFET, TO-247 '
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    Rochester Electronics HUF75339G3_NL 60 1
    • 1 $0.7801
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    HUF75339G3 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75339G3 Fairchild Semiconductor 75AR 55V, 0.012 ?R N-Channel UltraFET Power MOSFETs Original PDF
    HUF75339G3 Fairchild Semiconductor 75 A, 55 V, 0.012 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75339G3 Harris Semiconductor 70A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75339G3 Intersil 75A, 55V, 0.012 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75339G3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75339G3 Harris Semiconductor 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs Scan PDF

    HUF75339G3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75339G3, HUF75339P3, HUF75339S3S

    75339p

    Abstract: TA75339 504E3 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75339G3, HUF75339P3, HUF75339S3S 97e-2 HUF75339 00e-3 90e-2 95e-3 95e-2 75339p TA75339 504E3 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334

    75339P

    Abstract: 75339 HUF75339G3 35E-1 75339G HUF75339 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST
    Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 70A, 55V The HUF75339 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		PDF HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S HUF75339 1-800-4-HARRIS 75339P 75339 HUF75339G3 35E-1 75339G HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST

    16E-5

    Abstract: HUF75339G3 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339S3
    Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 Features Description • 70A, 55V • Ultra Low On-Resistance, rDS ON = 0.012Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		PDF HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S TB334, 1-800-4-HARRIS 16E-5 HUF75339G3 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339S3

    75339p

    Abstract: 75339g HUF75339P HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TA75339 TB334
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75339G3, HUF75339P3, HUF75339S3S 75339p 75339g HUF75339P HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TA75339 TB334

    75339p

    Abstract: 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339 HUF75339P
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75339G3, HUF75339P3, HUF75339S3S 75339p 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339 HUF75339P

    75339P

    Abstract: TA75339 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75339G3, HUF75339P3, HUF75339S3S 43ucts 75339P TA75339 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334

    20e9

    Abstract: No abstract text available
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75339G3, HUF75339P3, HUF75339S3S 20e9

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    HUF75307D

    Abstract: No abstract text available
    Text: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology


    Original     		PDF 5V/75A/0 OT-223 O-251AA/252AA O-220AB HUF75345P3 HUF75343P3 HUF75339P3 HUF75337P3 HUF75333P3 O-262AA/263AB HUF75307D

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    igbt inverter welder schematic

    Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field


    Original     		PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    RFD14N05 spice

    Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
    Text: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance


    Original     		PDF HRF3205 HRF3205S HRFZ44N HUF75229P3 HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S RFD14N05 spice HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S

    75339p

    Abstract: 75339g TA75339 263A tic 263a 75339S F75339P3
    Text: in te fsil HUF75339G3, HUF75339P3, HUF75339S3S D a ta S h e e t J u n e 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75339G3, HUF75339P3, HUF75339S3S HUF7S339G3, HUF75339S3S AN7260. 75339p 75339g TA75339 263A tic 263a 75339S F75339P3

    75339P3

    Abstract: No abstract text available
    Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S Semiconductor Data Sheet 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S O-263AB O-263AB 75339P3

    75339P3

    Abstract: No abstract text available
    Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S HARRIS S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 MM Features • 70A, 55V • Ultra Low On-Resistance, ros ON = 2i2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan     		PDF HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S TB334, 1-800-4-HARRIS 75339P3

    75339p

    Abstract: 75339g TA75339 75339 HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334 504E3
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Semiconductor June 1999 Data Sheet 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75339G3, HUF75339P3, HUF75339S3S 54e-2 98e-1 99e-1 97e-2 HUF75339 00e-3 90e-2 75339p 75339g TA75339 75339 HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334 504E3

    Untitled

    Abstract: No abstract text available
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75339G3, HUF75339P3, HUF75339S3S 98e-1 99e-1 97e-2 HUF75339 00e-3 90e-2 95e-3