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Abstract: 2SA1739 2SC3938
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1739 Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938 (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/
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2002/95/EC)
2SA1739
2SC3938
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2SA1739
2SC3938
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image processing free
Abstract: No abstract text available
Text: For Communications Equipment MN86074 Image Processing LSI Overview transistor FET An external resistor determines the follow-up range. M Di ain sc te on na tin nc ue e/ d The MN86074 boosts image quality by applying various image processing techniques to the analog signal from
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MN86074
MN86074
64-gradation,
image processing free
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Untitled
Abstract: No abstract text available
Text: Transistors 2SA1806 Silicon PNP epitaxial planar type For high speed switching Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 • High speed switching • Low collector-emitter saturation voltage VCE sat • SS-Mini type package allowing downsizing of the equipment and
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2SA1806
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Abstract: No abstract text available
Text: 2N3749 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated at 5 amps and is military qualified up to a JANTXV level. This TO-111 isolated package features a 180 degree lead orientation.
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2N3749
MIL-PRF-19500/315
O-111
H28/1
FED-STD-H28/1)
T4-LDS-0328,
190-32UNF-2A
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AN44060A
Abstract: an44060
Text: M Di ain sc te on na tin nc ue e/ d ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . DATA SHEET AN44060A Package Code No. HSOP042-P-0400D Pl Part No. SEMICONDUCTOR COMPANY
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AN44060A
HSOP042-P-0400D
SFA00002AEB
AN44060A
an44060
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching • Package • High speed switching • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SA1806G
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Transistor PA 8403
Abstract: No abstract text available
Text: ICs for CD/CD-ROM Player AN8812SC, AN8812SCR 4ch. Linear Driver IC for CD/CD-ROM AN8812SC Unit : mm 6.0 (4.6) 1 28 16.0±0.3 1.0 15 1.45±0.16 (0.2) 3.15±0.2 0.1±0.1 (0.5) 8.4±0.3 1.45±0.16 11.73±0.3 Fin-attached 28-lead SOP package (HSOP028-P-0450)
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AN8812SC,
AN8812SCR
AN8812SC
AN8812SCR
AN8812SC
Transistor PA 8403
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mitsumi 455khz
Abstract: No abstract text available
Text: ICs for FM/AM Tuner AN7002K, AN7002S Single Chip ICs for AM Radio Unit : mm 22 21 20 19 18 17 16 15 14 13 12 M Di ain sc te on na tin nc ue e/ d 19.1±0.3 1 2 3 4 5 6 7 8 9 10 11 0.5±0.1 0.9±0.25 AN7002K The AN7002K and the AN7002S are the single chip ICs
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AN7002K,
AN7002S
AN7002K
AN7002S
AN7002K
mitsumi 455khz
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1739 Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938 (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10
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2002/95/EC)
2SA1739
2SC3938
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Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1738 Silicon PNP epitaxial planar type For high speed switching Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ d p lan inc
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2SA1738
2SC3757)
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2SA1806J
Abstract: SC-89
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 Unit: mm 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 For high speed switching • Features
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2002/95/EC)
2SA1806J
2SA1806J
SC-89
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 Unit: mm 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 For high speed switching • Features
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2SA1806J
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2082 Silicon PNP epitaxial planar type For high speed switching Unit: mm • Features 3 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –10 V Collector-emitter voltage (Base open)
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2002/95/EC)
2SA2082
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Untitled
Abstract: No abstract text available
Text: AN8294S Optical Disc Brush-less Spindle Motor Drive IC • Overview 1 2 3 4 5 6 7 8 9 10 11 12 ■ Features • Three-phase full-wave soft switch system used and snubber- 1.27 7.8 (9.2) 16.0±0.3 M Di ain sc te on na tin nc ue e/ d 24 23 22 21 20 19 18 17
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AN8294S
AN8294S
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transistor ic equivalent book
Abstract: No abstract text available
Text: AN3861SA Sensor-less Motor Drive IC for VTR Movie Cylinder • Overview Unit : mm The AN3861SA is a sensor-less motor drive IC for VTR movie cylinder. It uses both sensor-less and sine wave drive, thus excellent for low-noise applications. 11.0±0.3 6.1±0.3
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AN3861SA
AN3861SA
transistor ic equivalent book
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Untitled
Abstract: No abstract text available
Text: For Video Equipment MN3113F Vertical Driver LSI for Video Camera CCD Area Image Sensor Pin Assignment Applications 34 35 36 37 38 39 40 41 42 43 44 22 21 20 19 18 17 16 15 14 13 12 VH VDD VCC2 IV2 IV4 SENSE1 VOUT+ VIN+ CAP3 CAP2 CAP1 1 2 3 4 5 6 7 8 9 10 11
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MN3113F
MN3113F
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Abstract: No abstract text available
Text: ICs for Audio Common Use AN12940AA Audio signal processing IC for notebook PC • Overview M Di ain sc te on na tin nc ue e/ d The AN12940AA is an amplifier IC for stereo speakers which can output 1 W by 8 Ω or 2 W by 4 Ω. The AGC circuit is built-in to prevent the resonance or the vibration by the speaker's energy and the clipping distortion what
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AN12940AA
AN12940AA
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Abstract: No abstract text available
Text: Others DN8667NS 8-Bit Shift Register Latch Constant Current Driver IC • Overview 0.4 Unit : mm 20 19 14 8 13 9 12 10 11 2.05±0.2 15 7 0.1 0.2 +– 0.05 0.9±0.25 16 6 1.27 17 5 5.5±0.3 7.6±0.3 (0.4) 0.9±0.25 ea s ht e v tp is :// it pa fo na llo so win
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DN8667NS
DN8667NS
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UV916
Abstract: UV916m PHILIPS tuner schematic TDA receiver QAM schematic diagram 16 QAM Transmitter block diagram HP3764A AN96048 HP8657A Signal mixing NE602 TDA 4600
Text: TDA 8046H multi-mode QAM demodulator Application note AN 96048 Philips Semiconductors Abstract The TDA8046H is a multi-mode QAM demodulator for Digital Video Broadcast applications on cable networks. It generates control voltages for external AGC, Carrier, and Clock recovery control loops. Demodulation to base band I and Q signals is done in the digital domain. A digital half Nyquist filter with a roll-off factor of 15% or 20% satisfies the U.S. and
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8046H
TDA8046H
UV916
UV916m
PHILIPS tuner schematic TDA
receiver QAM schematic diagram
16 QAM Transmitter block diagram
HP3764A
AN96048
HP8657A
Signal mixing NE602
TDA 4600
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Abstract: No abstract text available
Text: Voltage Regulators AN1149NFHK 6-ch DC-DC Converter • Overview Unit: mm 9.0±0.2 7.0±0.1 36 25 24 37 0.75 7.0±0.1 9.0±0.2 M Di ain sc te on na tin nc ue e/ d 4 channels of step-up, 1 channel of step-down and 1 channel of step-up/down voltage, 6 channels in total have
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AN1149NFHK
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PHT11N06LT
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low
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PHT11N06LT
OT223
OT223.
PHT11N06LT
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F587
Abstract: TI 740
Text: SSC D • ß 2 3 S b G 5 ÜQOMbTB 3 H S I E 6 . NPN Silicon RF Transistors BFS 18 BFS 18 R SIEMENS AKTIENGESELLSCHAF 0 ~ T ^ 3 I- '0 -BFS 19 BFS 19 R BFS 18 and BFS 19 are epitaxial NPN silicon planar transistors in TO 236 plastic package 23 A 3 DIN 41869 . These transistors were especially designed fo r use in RF circuits
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62702-F30
F587
TI 740
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Untitled
Abstract: No abstract text available
Text: High Speed Transistor Couplers Single/Dual Channel 8 Pin DIP Part M ih* m •m /im *. rM R im <52. 9 ImA 6N135 6N136 ICPL4502 Single channel Transistor Output 7 High C.M.R. 1 kv/tis. min 19 ICPL2533 Dual Channel Transistor Output «» F tm ■HT» f W M ilM M t a iilii .
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6N135
6N136
ICPL4502
ICPL2530
ICPL2531
ICPL2533
6N137
ICPL2601
ICPL2611
ICPL2630
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Untitled
Abstract: No abstract text available
Text: 3 Stanford Microdevices Product Description SSW-308 Stanford M icrodevices’ SSW -308 is a high perfom ance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-3 GHz Low Cost G a As MMIC SPDT Switch
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SSW-308
28dBm.
-45Cto
500MHz
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