HSD2118J Search Results

HSD2118J Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HSD2118J		Hi-Sincerity Mocroelectronics	NPN Bipolar Transistor		Original	PDF

HSD2118J Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
y1 marking code transistor Abstract: y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor Text: HI-SINCERITY Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HSD2118J LOW VCE sat TRANSISTOR (20V, 5A) Feature • Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A) • Excellent DC Current Gain Characteristic	Original	HJ200205 HSD2118J HSB1386J O-252 183oC 217oC 260oC y1 marking code transistor y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

y1 marking code transistor

Abstract: y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor
Text: HI-SINCERITY Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HSD2118J LOW VCE sat TRANSISTOR (20V, 5A) Feature • Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A) • Excellent DC Current Gain Characteristic

Original

HJ200205 HSD2118J HSB1386J O-252 183oC 217oC 260oC y1 marking code transistor y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor

PDF