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    HN3C10FU Search Results

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    HN3C10FU Price and Stock

    Toshiba America Electronic Components HN3C10FUTE85LF

    RF TRANS 2 NPN 12V 7GHZ US6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HN3C10FUTE85LF Cut Tape 89 1
    • 1 $0.85
    • 10 $0.528
    • 100 $0.528
    • 1000 $0.528
    • 10000 $0.528
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    HN3C10FUTE85LF Digi-Reel 89 1
    • 1 $0.85
    • 10 $0.528
    • 100 $0.528
    • 1000 $0.528
    • 10000 $0.528
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    HN3C10FUTE85LF Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.1982
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    HN3C10FU Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN3C10FU Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    HN3C10FU Toshiba NPN Multi-Chip Composite Transistor Pair Scan PDF
    HN3C10FU(TE85L) Toshiba TRANS GP BJT NPN 12V 0.08A 6(2-2J1A) T/R Scan PDF

    HN3C10FU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2SC5066

    Abstract: 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450
    Text: Cross Reference RF Product Cross Reference Tachyonics THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z THN4201E THN4201KF THN4201U THN4301E THN4301KF THN4301U THN4501E THN4501KF THN4501U THN6201E THN6201KF THN6201S THN6201U


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    PDF THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z transistor 2SC5066 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450

    HN3C10FU

    Abstract: No abstract text available
    Text: TOSHIBA HN3C10FU T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C10FU V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS Unit in mm 2.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads ± 0.1 M A X IM U M RATINGS (Ta = 25°C)


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    HN3C10FU

    Abstract: No abstract text available
    Text: TO SH IBA HN3C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL


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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C10FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C10FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


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    Abstract: No abstract text available
    Text: HN3C10FU TOSHIBA TOSHIBA TRANSISTOR h SILICON NPN EPITAXIAL PLANAR TYPE N3 r 1 nFh VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC


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    Abstract: No abstract text available
    Text: TO SHIBA HN3C10FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C1OFU Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


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    PDF HN3C10FU

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA HN3C10FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C1OFU Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


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