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Toshiba America Electronic Components HN1C01FE-GR,LF Bipolar Transistors - BJT Transistor for Small Signal Amp
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HN1C01FE-GR,LF		30,699			1 $0.16 10 $0.109 100 $0.056 1000 $0.045 10000 $0.031	Buy Now
Toshiba America Electronic Components HN1C01FU-GR,LF Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HN1C01FU-GR,LF		9,739			1 $0.21 10 $0.138 100 $0.062 1000 $0.056 10000 $0.042	Buy Now
Toshiba America Electronic Components HN1C01F-GR(TE85L,F Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HN1C01F-GR(TE85L,F		8,170			1 $0.3 10 $0.296 100 $0.296 1000 $0.23 10000 $0.046	Buy Now
Verical	HN1C01F-GR(TE85L,F		1,765		157	1 - 10 - 100 - 1000 $0.1488 10000 $0.1488	Buy Now
Toshiba America Electronic Components HN1C01FE-Y,LXHF Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HN1C01FE-Y,LXHF		8,000			1 $0.28 10 $0.182 100 $0.083 1000 $0.068 10000 $0.048	Buy Now
TTI	HN1C01FE-Y,LXHF	Reel			4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components HN1C01FYTE85LF Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HN1C01FYTE85LF		7,991			1 $0.3 10 $0.184 100 $0.087 1000 $0.077 10000 $0.045	Buy Now

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HN1C01F Datasheets (53)

Part	Manufacturer	Description	Datasheet Type	PDF
HN1C01F	Toshiba	NPN Multi-Chip Composite Transistor Pair	Original	PDF
HN1C01F	Toshiba	Japanese - Transistors	Original	PDF
HN1C01F	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
HN1C01FE	Toshiba	Transistor Silicon NPN Epitaxial Type (PCT Process)	Original	PDF
HN1C01FEGR	Toshiba	TRANS GP BJT NPN 50V 50A 6(2-2N1G)	Original	PDF
HN1C01FE-GR,LF	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 50V 0.15A ES6	Original	PDF
HN1C01FE-GR(5L,F,T	Toshiba	Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL NPN 50V 0.15A ES6	Original	PDF
HN1C01FE-GR,LXHF	Toshiba America Electronic Components	AUTO AEC-Q NPN + NPN TR VCEO:50V	Original	PDF
HN1C01FE-Y,LF	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 50V 0.15A ES6	Original	PDF
HN1C01FE-Y,LXHF	Toshiba America Electronic Components	AUTO AEC-Q NPN + NPN TR VCEO:50V	Original	PDF
HN1C01FE-Y(T5L,F,T	Toshiba	Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL NPN 50V 0.15A ES6	Original	PDF
HN1C01FGRTE85L	Toshiba	HN1C01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C01F-GR(TE85L,F	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 50V 0.15A SM6	Original	PDF
HN1C01F-GRTE85LF	Toshiba	HN1C01F - Trans GP BJT NPN 50V 0.15A 6-Pin SM T/R	Original	PDF

HN1C01F-GR(TE85L,F)	Toshiba	Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS NPN 50V 150MA SM6	Original	PDF
HN1C01FGRTE85N	Toshiba	HN1C01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C01FGRTE85R	Toshiba	HN1C01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C01F(T5L:T)	Toshiba	TRANS GP BJT NPN 50V 0.15A 6(2-3N1A) T/R	Original	PDF
HN1C01F(TE85L)	Toshiba	TRANS GP BJT NPN 50V 0.15A 6(2-3N1A)	Original	PDF
HN1C01FTE85L	Toshiba	HN1C01 - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal	Original	PDF

HN1C01F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HN1C01F Abstract: No abstract text available Text: HN1C01F シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ HN1C01F ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 z z z z z 単位: mm スーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。	Original	PDF	HN1C01F 150mA 100mA, HN1C01F
Untitled Abstract: No abstract text available Text: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400	Original	PDF	HN1C01FE 150mA
HN1C01F Abstract: No abstract text available Text: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio Frequency General Purpose Amplifier Applications l Small package (Dual type) l High voltage and high current : VCEO = 50V, IC = 150mA (max) l High hFE : hFE = 120~400	Original	PDF	HN1C01F 150mA HN1C01F
HN1C01F Abstract: No abstract text available Text: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50 V, IC = 150 mA (max) z High hFE : hFE = 120~400	Original	PDF	HN1C01F HN1C01F
Untitled Abstract: No abstract text available Text: HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400	Original	PDF	HN1C01FU 150mA
Untitled Abstract: No abstract text available Text: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50 V, IC = 150 mA (max) z High hFE : hFE = 120 to 400	Original	PDF	HN1C01F
HN1C01F Abstract: No abstract text available Text: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50 V, IC = 150 mA (max) High hFE : hFE = 120~400 Excellent hFE linearity	Original	PDF	HN1C01F HN1C01F
Untitled Abstract: No abstract text available Text: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity	Original	PDF	HN1C01FE 150mA
HN1C01FU Abstract: No abstract text available Text: HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400	Original	PDF	HN1C01FU 150mA HN1C01FU
HN1C01FU Abstract: No abstract text available Text: HN1C01FU シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ HN1C01FU ○ 低周波増幅用 z z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。高耐圧です。 : VCEO = 50V	Original	PDF	HN1C01FU 150mA 100mA, HN1C01FU
HN1C01FE Abstract: No abstract text available Text: HN1C01FE 東芝トランジスタシリコンNPNエピタキシャル形 PCT方式 HN1C01FE ○ 低周波増幅用単位: mm z エクストリームスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。 z 高耐圧です。	Original	PDF	HN1C01FE 150mA HN1C01FE
HN1C01FE Abstract: No abstract text available Text: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400	Original	PDF	HN1C01FE 150mA HN1C01FE
HN1C01FU Abstract: No abstract text available Text: HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FU Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity	Original	PDF	HN1C01FU 150mA HN1C01FU
HN1C01F Abstract: No abstract text available Text: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity	Original	PDF	HN1C01F 150mA HN1C01F

HN1C01FE Abstract: No abstract text available Text: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity	Original	PDF	HN1C01FE 150mA HN1C01FE
HN1C01F Abstract: No abstract text available Text: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50 V, IC = 150 mA (max) z High hFE : hFE = 120~400	Original	PDF	HN1C01F HN1C01F
HN1C01FE Abstract: No abstract text available Text: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400	Original	PDF	HN1C01FE 150mA HN1C01FE
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TYPE HN1C01FU U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Small Package Dual Type • High Voltage and High Current : Vc e O ~ 50V, 10 = 150mA (MAX.) • High hpE : hpE = 120~400 • Excellent hpE Linearity	OCR Scan	PDF	HN1C01FU 150mA
Untitled Abstract: No abstract text available Text: TOSHIBA HN1C01 FU T O S H IB A T R A N SISTO R SILICO N NPN E P ITA X IA L TYPE PCT PROCESS HN1C01FU Unit in mm A U D IO FR E Q U E N C Y G ENERAL PURPOSE A M P L IFIE R A P P L IC A T IO N S . 2 . 1± 0.1 1.25 ±0.1 1— D6 11 IT L_L 2 S 9 '0 M A X IM U M	OCR Scan	PDF	HN1C01 HN1C01FU 150mA
UX1000 Abstract: No abstract text available Text: TOSHIBA HN1C01FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS H N 1 r fl 1 F 11 u u u m Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 . 1± 0.1 1.2 5 ±0.1 • Small Package (Dual Type) n 6 • High Voltage and High Current	OCR Scan	PDF	HN1C01FU 150mA 961001EAA2' UX1000
marking N1C Abstract: TRANSISTOR MARKING TE US6 "MARKING TE" US6 D9ED N1C TRANSISTOR HN1C01FU ed general semiconductor Text: TOSHIBA HN1C01FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS H N 1 C 0 1 FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 .1± 0.1 1.25 ± 0.1. • Small Package (Dual Type) • High Voltage and High Current : V c e O = 50V, Ie = 150mA (MAX.)	OCR Scan	PDF	HN1C01FU 150mA 961001EAA2' marking N1C TRANSISTOR MARKING TE US6 "MARKING TE" US6 D9ED N1C TRANSISTOR HN1C01FU ed general semiconductor
Untitled Abstract: No abstract text available Text: TOSHIBA HN1C01F TOSHIBA TRANSISTOR h SILICON NPN EPITAXIAL TYPE PCT PROCESS N1 r n1 F Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package (Dual Type) High Voltage and High Current : V(}EO = 50V, Ic = 150mA (Max.)	OCR Scan	PDF	HN1C01F 150mA 61001EA
Untitled Abstract: No abstract text available Text: T O SH IB A HN1C01F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C01F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package (Dual Type) High Voltage and High Current : VCEO = 50V, Ic = 150mA (Max.)	OCR Scan	PDF	HN1C01F 150mA
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TYPE HN1C01F U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package Dual Type High Voltage and High Current : V q ]jo = 50V, I q = 150mA (Max.) High hjrE : hpg = 120—400 Excellent hpE Linearity	OCR Scan	PDF	HN1C01F 150mA 100mA,

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Toshiba America Electronic Components HN1C01FE-GR,LF

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HN1C01F Datasheets (53)

HN1C01F Datasheets Context Search

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