BSL215C
Abstract: HLG09283 L6327
Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)
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BSL215C
L6327:
BSL215C
HLG09283
L6327
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TLE4966K
Abstract: TSOP6 AEA03645 HLG09283
Text: Data Sheet, Rev. 1.0, September 2007 TLE4966K High Precision Hall-Effect Switch with Direction Detection Sensors Edition 2007-09 Published by Infineon Technologies AG 81726 München, Germany 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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TLE4966K
GPX09300
HLG09283
TLE4966K
TSOP6
AEA03645
HLG09283
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SMD MARKING d36
Abstract: BSL802SN HLG09283 JESD22-A114 L6327
Text: BSL802SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 22 mΩ V GS=1.8 V 31 ID 7.5 A • Avalanche rated • Qualified according to AEC Q101
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BSL802SN
L6327:
SMD MARKING d36
BSL802SN
HLG09283
JESD22-A114
L6327
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BSL207N
Abstract: HLG09283 JESD22-A114 L6327
Text: BSL207N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 70 mΩ V GS=2.5 V 110 ID 2.1 A • Avalanche rated • Qualified according to AEC Q101
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BSL207N
L6327:
BSL207N
HLG09283
JESD22-A114
L6327
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BSL214N
Abstract: No abstract text available
Text: BSL214N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 140 mΩ V GS=2.5 V 250 ID 1.5 A • Avalanche rated • Qualified according to AEC Q101
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BSL214N
L6327:
BSL214N
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Untitled
Abstract: No abstract text available
Text: BSL806N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101
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BSL806N
L6327:
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JESD22-C10-HBM
Abstract: A70 SMD
Text: BSL302SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 25 mΩ V GS=4.5 V 38 ID 7.1 A • Avalanche rated • dv /dt rated PG-TSOP-6 • Pb-free lead plating; RoHS compliant
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BSL302SN
L6327
JESD22-C10-HBM
A70 SMD
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Untitled
Abstract: No abstract text available
Text: BSL306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated PG-TSOP6 • Qualified according to AEC Q101
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BSL306N
L6327:
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BSL207N
Abstract: D-21A
Text: BSL207N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 70 mΩ V GS=2.5 V 110 ID 2.1 A • Avalanche rated • Qualified according to AEC Q101
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BSL207N
L6327:
150nces.
BSL207N
D-21A
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bsl307sp
Abstract: No abstract text available
Text: BSL307SP Rev 1.5 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5
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BSL307SP
L6327:
3000pcs/r.
bsl307sp
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marking 8d
Abstract: marking 8E 8d4f marking IBW 8D marking MARKING 3B
Text: 3B=*'/@6 # <?5" # & E $ & 9 -8 8& 53: -8'=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ 9I S G4? * 6;4AA8? ' 9I"^]#$\Pf S A;4A68@ 8AF@ B78 S & B: <6 ?8H8? / D4F87 %+ K ) =I / 0( \" ) =I / )+( $9 %*&( 6 S - CDBF86F87 F=%JIEF%. S + G4?<9<87 466BD7<A: FB +
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466BD
marking 8d
marking 8E
8d4f
marking IBW
8D marking
MARKING 3B
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BSL215C
Abstract: HLG09283 L6327
Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)
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BSL215C
L6327:
BSL215C
HLG09283
L6327
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Untitled
Abstract: No abstract text available
Text: BSL307SP Rev 1.6 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5
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BSL307SP
IEC61249Â
H6327:
3000pcs/r.
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Untitled
Abstract: No abstract text available
Text: TLE4966-2K High Precision Hall Switch with two Outputs Datasheet Rev.1.0, 2010-06-28 Sense & Control Edition 2010-06-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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TLE4966-2K
GPX09300
HLG09283
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55b7
Abstract: C89T marking BM marking A9
Text: 3B=* ,@ # <?5" # & E $ & 9 -88& 53: -8 '=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ ;J T H5@ + 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 %+( L ) >J 0 )-( ]" ) >J 0 */( $; T ' C;=7 @9I9@ 0 E5G98 %)&- 7 T I5@5B7<9 E5G98 G>%KJFG%. T , H5@=:=98 577CE8=B; GC
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5B79A
577CE
55b7
C89T
marking BM
marking A9
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CH 8i
Abstract: No abstract text available
Text: 3C=/'-? @Y\R>@Cb ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ;J U I6A) 8=6CC: A ' ;J"`_#$^Rh U C=6C8: B : CHB D9: U 0 AHF6 ' D<> 8 A: J: A 1 F6H: 9 *( M ) >J 1 -/ ^" ) >J 1 0* $; *&+ 7 U J6A6C8=: F6H: 9 U , I6A> ;> : 9 688DF9>
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BSL315P
Abstract: JESD22-A114 L6327
Text: BSL315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode -30 V V GS=10 V 150 mΩ V GS=4.5 V 270 ID • Logic level (4.5V rated) -1.5 • Avalanche rated A PG-TSOP-6 • Qualified according to AEC Q101
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BSL315P
L6327:
BSL315P
JESD22-A114
L6327
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BSL314PE
Abstract: JESD22-A114 L6327
Text: BSL314PE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-TSOP-6 • Qualified according AEC Q101
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BSL314PE
L6327:
BSL314PE
JESD22-A114
L6327
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BSL308C
Abstract: HLG09283 L6327
Text: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features P N -30 30 V V GS=±10 V 80 57 mΩ V GS=±4.5 V 130 93 -2.0 2.3 • Complementary P + N channel · Enhancement mode V DS · Logic level 4.5V rated R DS(on),max · Avalanche rated
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BSL308C
L6327:
BSL308C
HLG09283
L6327
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AEA03645
Abstract: PG-SSO-41 4966B AEA03255 AEP03646 HLG09283 TLE4966H TLE4966L
Text: Da ta Sh e et , V 1 .1 , Oct o be r 20 0 5 TLE4966H TLE4966L High Precision Hall-Effect Switch with Direction Detection Sen s ors Edition 2005-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2005.
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TLE4966H
TLE4966L
AEA03645
PG-SSO-41
4966B
AEA03255
AEP03646
HLG09283
TLE4966H
TLE4966L
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Untitled
Abstract: No abstract text available
Text: BSL207N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 70 mΩ V GS=2.5 V 110 ID 2.1 A • Avalanche rated • Qualified according to AEC Q101
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BSL207N
L6327:
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Untitled
Abstract: No abstract text available
Text: BSL205N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 50 mΩ V GS=2.5 V 85 ID 2.5 A • Avalanche rated • Qualified according to AEC Q101
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BSL205N
L6327:
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JESD22-A114
Abstract: BSL306N HLG09283 L6327
Text: BSL306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated PG-TSOP-6 • Qualified according to AEC Q101
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BSL306N
L6327:
JESD22-A114
BSL306N
HLG09283
L6327
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BSL205N
Abstract: D-195 HLG09283 JESD22-A114 L6327
Text: BSL205N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 50 mΩ V GS=2.5 V 85 ID 2.5 A • Avalanche rated • Qualified according to AEC Q101
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BSL205N
L6327:
BSL205N
D-195
HLG09283
JESD22-A114
L6327
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