HIGH-POWER NPN SILICON POWER TRANSISTOR 30A, TO3 Search Results

HIGH-POWER NPN SILICON POWER TRANSISTOR 30A, TO3 Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
MG800FXF1ZMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L

HIGH-POWER NPN SILICON POWER TRANSISTOR 30A, TO3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NTE386 Abstract: npn 10a 800v Text: NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high– speed power switching in inductive circuit where fall time is critical. This device is particularly suited	Original	PDF	NTE386 NTE386 300ms, npn 10a 800v
Untitled Abstract: No abstract text available Text: SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO	Original	PDF	2N5672 34mW/Â 800mW/Â 380us, O-204AA)
Untitled Abstract: No abstract text available Text: SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO	Original	PDF	2N5672 34mW/Â 800mW/Â 380us, O-204AA)
Untitled Abstract: No abstract text available Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO	Original	PDF	BUX10 O-204AA)
Untitled Abstract: No abstract text available Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO	Original	PDF	BUX10 O-204AA)
bux23 Abstract: No abstract text available Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX23 • High Current, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated	Original	PDF	BUX23 O-204AE) bux23
BUX39 Abstract: transistor 110v Text: SILICON EPITAXIAL NPN TRANSISTOR BUX39 • High Current Capability. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated	Original	PDF	BUX39 O-204AA) BUX39 transistor 110v
Untitled Abstract: No abstract text available Text: SILICON EPITAXIAL NPN TRANSISTOR BUX39 • High Current Capability. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated	Original	PDF	BUX39 O-204AA)
nte181 Abstract: NTE180MCP NEC 08F NTE181MP NTE180 NTE181 power transistor 200w audio power amplifier Text: NTE180 PNP & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per	Original	PDF	NTE180 NTE181 750mA NTE181MP NTE181 NTE180MCP NEC 08F NTE180 NTE181 power transistor 200w audio power amplifier
NTE385 Abstract: No abstract text available Text: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated	Original	PDF	NTE385 NTE385
nte98 Abstract: No abstract text available Text: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly	Original	PDF	NTE98 NTE98
NTE53 Abstract: TRANSISTOR 450V 5A NPN 100W Text: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE53 is a silicon NPN transistor in a TO3 type package designed for high voltage, high - speed power switching in inductive circuits where fall time is critical. This device is particularly suited for	Original	PDF	NTE53 NTE53 TRANSISTOR 450V 5A NPN 100W
NTE53 Abstract: NTE52 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3 Text: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for	Original	PDF	NTE53 NTE52 NTE53 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3
Untitled Abstract: No abstract text available Text: J.S.11.S.Ut/ ^zmi-donauctoi L/^ioaucti, One. CX TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY52A Silicon NPN Power Transistor DESCRIPTION • High Current Capability • Fast Switching Speed	Original	PDF	BUY52A

induction cooker schematic diagram Abstract: schematic diagram induction heating schematic diagram induction cooker diagram induction cooker schematic induction heating induction cooker circuit diagram induction cooker schematic induction heating schematic induction cooker Darlington NPN 250W Text: NTE2558 Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode TO3PBL Type Package Features: D High Reliability D High Collector−Base Breakdown Voltage D On−Chip Damper Diode Applications: D High−Voltage, High−Power Switching	Original	PDF	NTE2558 100mA induction cooker schematic diagram schematic diagram induction heating schematic diagram induction cooker diagram induction cooker schematic induction heating induction cooker circuit diagram induction cooker schematic induction heating schematic induction cooker Darlington NPN 250W
Untitled Abstract: No abstract text available Text: NTE2677 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	PDF	NTE2677
High-Power NPN Silicon Power Transistor 30A Abstract: MJ4502 MJ802 High-Power NPN Silicon Power Transistor pec 928 High-Power NPN Silicon Power Transistor 30A, to3 Text: ÆàMOS PEC HIGH-POWER NPN SILICON TRANSISTOR NPN .for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. MJ802 FEATURES * Continuous Collector Current- lc= 30A * High DC Current Gain- hFE=25-100@lc= 7.5A * Excellent Safe Operating Area	OCR Scan	PDF	100-Watts 750mA MJ4502 High-Power NPN Silicon Power Transistor 30A MJ4502 MJ802 High-Power NPN Silicon Power Transistor pec 928 High-Power NPN Silicon Power Transistor 30A, to3
Darlington 30A Abstract: No abstract text available Text: 6 1 1 5 9 5 0 MI CROSEMI CORP/ POWER Û2E ÖÖ 480 D j_0E DEjbllSTSD □00D4Û0 fl pjQ -\|0020 H T EC H N O L O G Y p j c 10021 Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 60 AMPERES 250 VOLTS 0.161 4jg 0.15) (3 84) u w - FEATURES	OCR Scan	PDF
Transistor 200V 20A Abstract: 200V transistor npn 20a SDT6338 NPN Transistor VCEO 80V 100V POWER TRANSISTOR PNP 20a 80v TO-3 200V transistor pnp 20a Text: ^/outran [fk ®!!! ? ©ättm ^n Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver” also available)	OCR Scan	PDF	305mm) Transistor 200V 20A 200V transistor npn 20a SDT6338 NPN Transistor VCEO 80V 100V POWER TRANSISTOR PNP 20a 80v TO-3 200V transistor pnp 20a
Untitled Abstract: No abstract text available Text: PGäOEXyKgTT @ A ¥ Ä [ L Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available	OCR Scan	PDF	203mm) 20MHz 20MHz 500pF
SOLITRON DEVICES Abstract: No abstract text available Text: at SOLITRON DEVICES INC 7-. DE I û3t.flfaDS DDDSSb'i S ELEMENT NUMBER 144 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 À Aluminum FORMERLY 44 Collector: Polished Silicon	OCR Scan	PDF	45mmx6 25mmx3 203mm) 40MHz 40MHz 300pF SOLITRON DEVICES
c106 TRANSISTOR Abstract: 800PF SDT6436 C10601 160V 30A TRANSISTOR SDT6438 c106 Text: -Jfclitron 1?1M [d 1ü) T ©ÄTTÄIL® Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available)	OCR Scan	PDF	305mm) c106 TRANSISTOR 800PF SDT6436 C10601 160V 30A TRANSISTOR SDT6438 c106
200V transistor npn 20a Abstract: Transistor 200V 20A 200V transistor pnp 20a NPN Transistor VCEO 80V 100V hfe 100 Transistor PnP 200V 20A Text: S OLI TRON DEV ICE S INC ^5 DE \| ä 3 bflbOE ODOafib? □ r ‘- 7 j _ / s " tPE iß y 'F © ä to l® ® _ ^ w E iÉ ro n Devices, Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR* x£\	OCR Scan	PDF	305mm) 20MHz 700pF 700pF 200V transistor npn 20a Transistor 200V 20A 200V transistor pnp 20a NPN Transistor VCEO 80V 100V hfe 100 Transistor PnP 200V 20A
transistor 2n5330 Abstract: transistor c63 NPN Transistor VCEO 80V 100V Text: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)	OCR Scan	PDF	203mm) 40MHz 40MHz 300pF transistor 2n5330 transistor c63 NPN Transistor VCEO 80V 100V

HIGH-POWER NPN SILICON POWER TRANSISTOR 30A, TO3 Search Results

HIGH-POWER NPN SILICON POWER TRANSISTOR 30A, TO3 Result Highlights (5)

HIGH-POWER NPN SILICON POWER TRANSISTOR 30A, TO3 Datasheets Context Search

NTE386

Untitled

Untitled

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Untitled

bux23

BUX39

Untitled

nte181

NTE385

nte98

NTE53

NTE53

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induction cooker schematic diagram

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High-Power NPN Silicon Power Transistor 30A

Darlington 30A

Transistor 200V 20A

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SOLITRON DEVICES

c106 TRANSISTOR

200V transistor npn 20a

transistor 2n5330