NTE386
Abstract: npn 10a 800v
Text: NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high– speed power switching in inductive circuit where fall time is critical. This device is particularly suited
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NTE386
NTE386
300ms,
npn 10a 800v
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nte98
Abstract: No abstract text available
Text: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly
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NTE98
NTE98
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NTE385
Abstract: No abstract text available
Text: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
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NTE385
NTE385
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NTE53
Abstract: TRANSISTOR 450V 5A NPN 100W
Text: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE53 is a silicon NPN transistor in a TO3 type package designed for high voltage, high - speed power switching in inductive circuits where fall time is critical. This device is particularly suited for
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NTE53
NTE53
TRANSISTOR 450V 5A NPN 100W
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NTE53
Abstract: NTE52 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3
Text: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for
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NTE53
NTE52
NTE53
220v DC MOTOR pwm
NPN Transistor 15A 400V to3
NPN Transistor 10A 400V to3
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nte181
Abstract: NTE180MCP NEC 08F NTE181MP NTE180 NTE181 power transistor 200w audio power amplifier
Text: NTE180 PNP & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per
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NTE180
NTE181
750mA
NTE181MP
NTE181
NTE180MCP
NEC 08F
NTE180
NTE181 power transistor
200w audio power amplifier
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transistor npn 100w amplifier
Abstract: rf amplifier 100w NTE470 amplifier 100w w amplifier 30mhz
Text: NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:
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NTE470
NTE470
30MHz.
30MHz
150mA,
001MHz
transistor npn 100w amplifier
rf amplifier 100w
amplifier 100w
w amplifier 30mhz
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NTE470
Abstract: transistor npn 100w amplifier transistor npn 100w amplifier TO-3P
Text: NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:
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NTE470
NTE470
30MHz.
30MHz
150mA,
001MHz
transistor npn 100w amplifier
transistor npn 100w amplifier TO-3P
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BUR21
Abstract: No abstract text available
Text: SGS-THOMSON BUR21 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA DESCRIPTION The BUR21 is a silicon multiepitaxiai planar NPN transistor in modified Jedec TO-3 metal case, inten
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BUR21
BUR21
10MHz
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BUW48
Abstract: Asg TRANSISTOR
Text: T SCS-THOMSON BUW48 ^ 7 # Meiamiigra@BtiiB8_ BUW49 HIGH POWER NPN SILICON TRANSISTORS . . . . . SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VER Y LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION
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BUW48
BUW49
BUW48
BUW49
O-218
Asg TRANSISTOR
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High-Power NPN Silicon Power Transistor 30A
Abstract: MJ4502 MJ802 High-Power NPN Silicon Power Transistor pec 928 High-Power NPN Silicon Power Transistor 30A, to3
Text: ÆàMOS PEC HIGH-POWER NPN SILICON TRANSISTOR NPN .for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. MJ802 FEATURES * Continuous Collector Current- lc= 30A * High DC Current Gain- hFE=25-100@lc= 7.5A * Excellent Safe Operating Area
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100-Watts
750mA
MJ4502
High-Power NPN Silicon Power Transistor 30A
MJ4502
MJ802
High-Power NPN Silicon Power Transistor
pec 928
High-Power NPN Silicon Power Transistor 30A, to3
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NTE2317
Abstract: automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor
Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter
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NTE2317
NTE2317
150mA
automotive ignition
Designed for automotive ignition applications
Electronic car ignition circuit
vce 500v NPN Transistor
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Untitled
Abstract: No abstract text available
Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter
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NTE2317
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nte2317
Abstract: automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor
Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter
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NTE2317
NTE2317
150mA
automotive ignition
Electronic car ignition circuit
Designed for automotive ignition applications
DARLINGTON 10A
to218
TO218 package
vbe 10v, vce 500v NPN Transistor
vce 500v NPN Transistor
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BUW48
Abstract: BUW49
Text: BUW48 BUW49 HIGH POWER NPN SILICON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN • ■ ■ ■ ■ 3 APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL
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BUW48
BUW49
BUW48
BUW49
O-218
O-218
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BUW48
Abstract: BUW49
Text: BUW48 BUW49 HIGH POWER NPN SILICON TRANSISTORS • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION ■ SWITCHING REGULATORS ■ MOTOR CONTROL
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BUW48
BUW49
O-218
BUW48
BUW49
O-218
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mj10021
Abstract: ob 2268 60 amp npn darlington power transistors MJ1002
Text: MJ10021 Darlington Power Transistor NPN silicon power darlington transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications.
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MJ10021
mj10021
ob 2268
60 amp npn darlington power transistors
MJ1002
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BUW48
Abstract: BUW48(A)F BUW49
Text: BUW48 BUW49 HIGH POWER NPN SILICON TRANSISTORS • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICENCY
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BUW48
BUW49
BUW48
BUW49
O-218
O-218
BUW48(A)F
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BUW48
Abstract: No abstract text available
Text: r z 7 S G S -m O M S O N Ä T # iMOigœiiLiiera *® BUW48 BUW49 HIGH POWER NPN SILICON TRANSISTORS . . . . . SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION
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BUW48
BUW49
BUW48
BUW49
O-218
BUW48/
O-218
OT-93)
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SDT96308
Abstract: sdt96
Text: Contran MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER Devices. Inc. NPN EPITAXIAL PLAIMAR POWER TRANSISTOR FORMERLY 96 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
cont10V
800pF
800pF
JAN2N5250,
JAN2N5251,
SDT96308
sdt96
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Untitled
Abstract: No abstract text available
Text: SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO
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2N5672
34mW/Â
800mW/Â
380us,
O-204AA)
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Untitled
Abstract: No abstract text available
Text: SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO
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2N5672
34mW/Â
800mW/Â
380us,
O-204AA)
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BUX98P
Abstract: No abstract text available
Text: BUX98P SILICON NPN SWITCHING TRANSISTOR n n n SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE HIGH SPEED TRANSISTOR SUITED FOR USE ON THE 220 AND 380V MAINS SUITABLE FOR SWITCH MODE POWER SUPPLY UPS, DC AND AC MOTOR CONTROL 3 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAM
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BUX98P
O-218
BUX98P
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BUW49
Abstract: BUW48
Text: BUW48 BUW49 HIGH POWER NPN SILICON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN s t c u d o ) r s ( P t c e t u e d l o o r s P
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BUW48
BUW49
BUW48
BUW49
O-218
O-218
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