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    HIGH SPEED SWITCHING NPN SOT23 Search Results

    HIGH SPEED SWITCHING NPN SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP2304 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed / IPM driver, 1 Mbps, 3750 Vrms, 5pin SO6 Visit Toshiba Electronic Devices & Storage Corporation

    HIGH SPEED SWITCHING NPN SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMBT5551 MMBT5551 OT-23 O-236) MMBT5551G-x-AE3-R QW-R206-010.

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010.

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 MMBT5551-x-AE3-R QW-R206-010

    MMBT2369

    Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23
    Text: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol


    Original     		PDF MMBT2369 MMBT2369 100mA. OT-23 MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23

    2n2222a SOT23

    Abstract: 2N2222A JAN 2N2222ACSM 2N2222A SOT23 transistor 2N2222A 2N2222A LCC1
    Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		PDF 2N2222ACSM 150mA 2n2222a SOT23 2N2222A JAN 2N2222ACSM 2N2222A SOT23 transistor 2N2222A 2N2222A LCC1

    2n2222a SOT23

    Abstract: 2N2222A LCC1 Transistor 2N2222A SOT23 transistor 2N2222A 2N2222A JAN npn switching transistor 60v 2N2222A 2N2222ACSM HIGH SPEED SWITCHING NPN SOT23
    Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		PDF 2N2222ACSM 150mA 2n2222a SOT23 2N2222A LCC1 Transistor 2N2222A SOT23 transistor 2N2222A 2N2222A JAN npn switching transistor 60v 2N2222A 2N2222ACSM HIGH SPEED SWITCHING NPN SOT23

    ts 4141

    Abstract: ts 4141 TRANSISTOR 2N2369A 2N2369ACSM
    Text: 2N2369ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR


    Original     		PDF 2N2369ACSM 2N2369A 100MHz 140kHz ts 4141 ts 4141 TRANSISTOR 2N2369ACSM

    Untitled

    Abstract: No abstract text available
    Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		PDF 2N2222ACSM 150mA

    2N2369A

    Abstract: 2N2369ACSM
    Text: SEME 2N2369ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN


    Original     		PDF 2N2369ACSM 2N2369A 100mA 100MHz 100kHz 300ms, 2N2369ACSM

    2n2222a SOT23

    Abstract: 2N2222A LCC1 2N2222ACSM 2N2222A
    Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		PDF 2N2222ACSM 150mA 2n2222a SOT23 2N2222A LCC1 2N2222ACSM 2N2222A

    2N2222ACSM

    Abstract: No abstract text available
    Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		PDF 2N2222ACSM 150mA 2N2222ACSM

    Untitled

    Abstract: No abstract text available
    Text: MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings


    Original     		PDF MMBT3646 OT-23 OT-23

    4491E

    Abstract: 2N2222ACSM "npn switching transistor" 2N2222ACSM-RH TST001 SIGMA as 103 63E-10
    Text: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)


    Original     		PDF 2N2222ACSM-RH 0E-10 0E-08 0E-09 4491E 2N2222ACSM "npn switching transistor" 2N2222ACSM-RH TST001 SIGMA as 103 63E-10

    2N2222A LCC1

    Abstract: 2n2222a SOT23 2N2222ACSM-RH SOT23 transistor 2N2222A 2N2222ACSM 2n2222a surface tr 5551 Transistor 2N2222A 2N2222A TST001
    Text: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)


    Original     		PDF 2N2222ACSM-RH TST001 TST002 2N2222A LCC1 2n2222a SOT23 2N2222ACSM-RH SOT23 transistor 2N2222A 2N2222ACSM 2n2222a surface tr 5551 Transistor 2N2222A 2N2222A TST001

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS  FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.)  ORDERING INFORMATION Ordering Number


    Original     		PDF 2SC2655 2SC2655Gx-AE3-R 2SC2655L-x-T9N-B 2SC2655Gx-T9N-B 2SC2655L-x-T9N-K 2SC2655Gx-T9N-K 2SC2655L-x-T9N-R 2SC2655Gx-T9N-R OT-23 O-92NL

    2STR1160

    Abstract: 2STR2160 JESD97
    Text: 2STR1160 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Description


    Original     		PDF 2STR1160 OT-23 OT-23 2STR2160. 2STR1160 2STR2160 JESD97

    2STR1215

    Abstract: 2STR2215 JESD97
    Text: 2STR1215 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Applications


    Original     		PDF 2STR1215 OT-23 OT-23 2STR1215 2STR2215. 2STR2215 JESD97

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.) „ ORDERING INFORMATION Ordering Number


    Original     		PDF 2SC2655 2SC2655L-x-AE3-R 2SC2655L-x-T9N-B 2SC2655L-x-T9N-K 2SC2655L-x-T9N-R 2SC2655Gx-AE3-R 2SC2655Gx-T9N-B 2SC2655Gx-T9N-K 2SC2655Gx-T9N-R OT-23

    Untitled

    Abstract: No abstract text available
    Text: 2STR1215 LOW VOLTAGE FAST-SWITCHING HIGH GAIN NPN POWER TRANSISTOR Features • VERY LOW COLLECTOR-EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAST-SWITCHING SPEED ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE ■ MINIATURE SOT-23 PLASTIC PACKAGE


    Original     		PDF 2STR1215 2002/93/EC OT-23 OT-23 2STR1215 2STR2215

    2STR1230

    Abstract: 2STR2230 JESD97
    Text: 2STR1230 Low voltage fast-switching NPN power transistor General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits ■


    Original     		PDF 2STR1230 OT-23 2002/93/EC OT-23 2STR2230. 2STR1230 2STR2230 JESD97

    KTN2369AS

    Abstract: KTN2369S KTN2369
    Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. K TN 2369S/A S EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent High Frequency Characteristics. • Excellent Switching Characteristics. MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF KTN2369S/AS KTN2369AS KTN2369S 100mA, KTN2369AS KTN2369S KTN2369

    SOT-23 marking l31

    Abstract: wA SOT23 SWITCHING F9 SOT23 marking va transistors C5 MARKING TRANSISTOR transistor dg sot-23 U/25/20/TN26/15/850/F9 SOT23 BCW29 BCW30 BFQ31
    Text: FERRANTI * semiconductors FMMT2369 NPN Silicon Planar High Speed Switching Transistor DESCRIPTION This device is intended specificelly fo r use in high speed, lo w current switching epplications. Encapsulated in th e popular SOT-213 package these devices are designed specifically fo r use in thin and thick film


    OCR Scan     		PDF FMMT2369 OT-23 Continuo00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B BSS82C SOT-23 marking l31 wA SOT23 SWITCHING F9 SOT23 marking va transistors C5 MARKING TRANSISTOR transistor dg sot-23 U/25/20/TN26/15/850/F9 SOT23 BCW29 BCW30 BFQ31

    KTN2369AS

    Abstract: KTN2369S HIGH SPEED SWITCHING NPN SOT23
    Text: SEMICONDUCTOR TECHNICAL DATA K TN 2369S/A S EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent High Frequency Characteristics. • Excellent Switching Characteristics. A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX


    OCR Scan     		PDF KTN2369S/AS KTN2369AS KTN2369S 100mA, KTN2369AS KTN2369S HIGH SPEED SWITCHING NPN SOT23

    MARKING CODE c2r sot 23

    Abstract: No abstract text available
    Text: Central" Semiconductor Corp. CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching applications.


    OCR Scan     		PDF CMPT3646 OT-23 100MHz 300mA 300mA, OT-23 26-September MARKING CODE c2r sot 23