HIGH SENSITIVITY PHOTODIODE VISIBLE LIGHT Search Results
HIGH SENSITIVITY PHOTODIODE VISIBLE LIGHT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GC321AD7LP153KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC331BD7LP473KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC332DD7LP154KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC343DD7LQ154KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC355DD7LQ334KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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HIGH SENSITIVITY PHOTODIODE VISIBLE LIGHT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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PHOTODIODE current voltage amplifier array
Abstract: PCD80 Photodiode Array 2d Photodiode Array 8850-080-170SD C4675 C4675-102 C4675-103 C4675-302 8850-080-170L
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C4675 256-element SE-171 KACC1001E02 PHOTODIODE current voltage amplifier array PCD80 Photodiode Array 2d Photodiode Array 8850-080-170SD C4675-102 C4675-103 C4675-302 8850-080-170L | |
Infrared photodiode sensor
Abstract: high sensitivity photodiode visible light
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S8753 S8753 SE-171 KSPD1057E01 Infrared photodiode sensor high sensitivity photodiode visible light | |
Contextual Info: PHOTODIODE Si photodiode S8753 Dual-element photodiode for visible and infrared range S8753 is a visible to infrared sensor using a dual-element photodiode molded into a package. S8753 has two photodiodes with different spectral response characteristics to deliver high sensitivity over the visible to infrared range. Package material used in S8753 does not cut visible light, |
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S8753 S8753 SE-171 KSPD1057E02 | |
dual photodiode
Abstract: Infrared photodiode sensor S8753 high sensitivity photodiode visible light dual infrared transistor photodiode SE-171 infrared
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S8753 S8753 SE-171 KSPD1057E01 dual photodiode Infrared photodiode sensor high sensitivity photodiode visible light dual infrared transistor photodiode infrared | |
KVS1001
Abstract: VOC sensor amorphous silicon photodiode
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KVS1001 KVS1001 100lx VOC sensor amorphous silicon photodiode | |
Contextual Info: Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications High humidity resistance 85 °C, 85 %, 1000 h Light dimmer in locations at high humidity or for outdoor use Visible-compensation filter Ceramic package (6 x 8 mm) |
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S8265 KSPD1041E02 | |
S8265
Abstract: SE-171
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S8265 SE-171 KSPD1041E01 S8265 | |
Contextual Info: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm l Light dimmer in locations at high humidity or for outdoor use |
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S8265 SE-171 KSPD1041E01 | |
transistor 1BW
Abstract: SE-171 1bw 85 S8265
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S8265 SE-171 KSPD1041E01 transistor 1BW 1bw 85 S8265 | |
S1227
Abstract: S1227-1010BQ S1227-1010BR S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR s12271010bq
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S1227 S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR S1227-1010BQ S1227-1010BR SE-171 S1227-1010BQ S1227-1010BR S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR s12271010bq | |
1010BQ
Abstract: S1227 S1227-1010BQ S1227-1010BR S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR
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S1227 S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR S1227-1010BQ S1227-1010BR SE-171 1010BQ S1227-1010BQ S1227-1010BR S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR | |
S5821
Abstract: S5821-01 S5821-02 S5821-03
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S5821 S5821 S5821-01 S5821-02 S5821-03 SE-171 KPIN1010E02 S5821-01 S5821-02 S5821-03 | |
S5821
Abstract: S5821-01 S5821-02 S5821-03
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S5821 S5821 S5821-01 S5821-02 S5821-03 SE-171 KPIN1010E02 S5821-01 S5821-02 S5821-03 | |
si photodiode
Abstract: S5821 S5821-01 S5821-02 S5821-03
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S5821 S5821 S5821-01 S5821-02 S5821-03 SE-171 KPIN1010E01 si photodiode S5821-01 S5821-02 S5821-03 | |
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ACTIVE LOAD PHOTODIODE
Abstract: KPIC1036E01 S5905-02 SE-171 photodiode preamplifier
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S5905-02 S5905-02 SE-171 KPIC1036E01 ACTIVE LOAD PHOTODIODE KPIC1036E01 photodiode preamplifier | |
28428
Abstract: AM 5888 S2387-66R S2387-1010R S2387 S2387-130R S2387-16R S2387-33R 1010r 100lX
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S2387 S2387-16R S2387-33R S2387-66R S2387-1010R S2387-130R SE-171 KSPD1033E01 28428 AM 5888 S2387-66R S2387-1010R S2387-130R S2387-16R S2387-33R 1010r 100lX | |
photoelectric motion detector
Abstract: POSITION SENSITIVE DETECTOR spot light size photodiode spot photodiode psd photodiode IC-HAUS light PHOTO SENSORS motion detector light od4c
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100kHz photoelectric motion detector POSITION SENSITIVE DETECTOR spot light size photodiode spot photodiode psd photodiode IC-HAUS light PHOTO SENSORS motion detector light od4c | |
G1126-02
Abstract: G1127-02 G2119 FA 8 600
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G1126-02, G1127-02, G2119 G1126-02 G1127-02 SE-171 KGPD1005E01 G1126-02 G1127-02 G2119 FA 8 600 | |
Contextual Info: PHOTODIODE Si APD S8664 series Short wavelength type APD Features l High sensitivity at visible range l Low noise l High gain l Low capacitance Applications l Low-light-level measurement l Analytical equipment 1 |
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S8664 | |
Hamamatsu s6775
Abstract: s6967 S6786
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S2506/S6775/S6967 S6786 S6786 S2506-04: S6775, S6967: SE-171 KPIN1048E02 Hamamatsu s6775 s6967 | |
G1127-02
Abstract: G1126-02 G2119
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G1126-02, G1127-02, G2119 G1126-02 G1127-02 SE-171 KGPD1005E01 G1127-02 G1126-02 G2119 | |
S6775
Abstract: S6967 S6786 S2506 S2506-02 S2506-04 S6775-01 S6967-01
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S2506/S6775/S6967 S6786 S6786 S2506-02: S2506-04: SE-171 KPIN1048E02 S6775 S6967 S2506 S2506-02 S2506-04 S6775-01 S6967-01 | |
IR LED 940 nmContextual Info: PIN PHOTODIODE DESCRIPTION FEATURES The PH320 is a PIN structure photodiode which is molded with visible-ray shielding resin, thus activating the light-receiving sensitivity at approx. 840 nm and leading to little possibility of malfunction by fluorescent lamps. As the high-speed re |
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PH320 PH320 PH302C, PH309 PH310, b427ses 00bS317 IR LED 940 nm | |
Contextual Info: iC-WQ AC PHOTO SENSOR WITH CURRENT OUTPUT if f if ll FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low-noise current amplifier with integrated photodiode High reliability due to monolithical design Effective photodiode area 0.9mm2 High sensitivity for visible light and near infrared |
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100kHz |