HIGH POWER IR EMITTER Search Results

IR Emitters

Contextual Info: HIGH-POWER GaAIAs IR EMITTERS OD-880W FEATURES • Three times the power output of GaAs IR emitters • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission for optimum matching with silicon detectors • Wide range of linear power output

IR Emitters

Abstract: IR Diode
Contextual Info: OD-880L HIGH-POWER GaAIAs IR EMITTERS FEATURES • Three times the power output of GaAs IR emitters • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission for optimum matching with silicon detectors • Wide range of linear power output

Contextual Info: OD-50W SUPER HIGH-POWER GaAIAs IR EMITTERS FEATURES • High reliability LPE grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very uniform optical beam • Standard 3-lead TO-39 hermetic package

IR Emitters

Contextual Info: OD-50L SUPER HIGH-POWER GaAIAs IR EMITTERS FEATURES • High reliability LPE Grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very narrow optical beam • Standard 3-lead TO-39 hermetic package • 100% test for minimum power requirement

IR Emitters

Contextual Info: OD-880F HIGH-POWER GaAIAs IR EMITTERS .030 .040 FEATURES • Three times the power output of GaAs IR emitters • High reliability liquid-phase epitaxially grown GaAIAs • 880 nm peak emission for optimum matching with silicon detectors .015 1.00 MIN. " f

OD-100

Contextual Info: OPTO DIODE SSE D CORP • bAOl^fi □□□□11S 7T4 « O P D >-V/~ f.? SUPER HIGH-POWER GaAIAs IR EMITTERS OD-100 FEATURES • High reliability LPE Grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners

OD-50L

Abstract: 880nm
Contextual Info: OPTO DIODE CORP 5SE ]> • bfloma ÜQÜDIGT MTD m O P V SUPER HIGH-POWER GaAIAs IR EMITTERS QD-50L FEATURES • High reliability LPE Grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very narrow optical beam

Contextual Info: OPTO DIODE CORP SSE D • bflQlW 0DOD11S 714 ■ O P D / - V / W , ? SUPER HIGH-POWER GaAIAs IR EMITTERS OD-100 FEATURES • High reliability LPE Grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very uniform optical beam

Contextual Info: OD-100 SUPER HIGH-POWER GaAIAs IR EMITTERS EPOXY FEATURES .014 • High reliability LPE Grown IR emitters .018 .130 MAX * t 500 • Ultra high power output • 880nm peak emission • Four wire bonded on die corners ANODE • Very uniform optical beam • Standard 3-lead TO-39 package

Contextual Info: OPTO DIODE CORP SSE D • bflOmfl 0D00070 ?Tb M O P D ~ V ~ HIGH-POWER GaAIAs IR EMITTERS OD-880W FEATURES • Three times the power output of GaAs IR emitters • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission for optimum matching with

Contextual Info: OPTO DIODE CORP SSE D • bflGlRRfl D 0 0 D G 7 b i m «OPD HIGH-POWER GaAlAs IR EMITTERS OD-880F FEATURES • Three times the power output of GaAs IR emitters • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission for optimum matching with

OD-50W

Contextual Info: OP T O DIODE 55E J> m CO R P b ô ümfl Ü0DD112 TñS • O P D 7 - SUPER HIGH-POWER GaAIAs IR EMITTERS QD-50W FEATURES • High reliability LPE grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very uniform optical beam

Contextual Info: OPTO DIO DE CORP SSE D • bñUmfl 0 G 0 0 1 1 2 TÔS * 0 P D / - SUPER HIGH-POWER GaAIAs IR EMITTERS QD-50W FEATURES • High reliability LPE grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very uniform optical beam

Contextual Info: 2013-10-24 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 SFH 4232 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 850 nm

Contextual Info: 2014-01-08 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.2 SFH 4235 Features: Besondere Merkmale: • • • • • IR lightsource with high efficiency Double Stack emitter Low thermal resistance (Max. 9 K/W)

OHF04132

Abstract: SFH4232 SFH 4232
Contextual Info: 2013-01-15 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4232 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 850 nm

Contextual Info: 2012-12-13 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4232A Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 11 K/W) Centroid wavelength 850 nm

Contextual Info: 2013-10-24 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.1 SFH 4233 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 940 nm

SFH 4232

Contextual Info: 2014-01-08 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.2 SFH 4232 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 850 nm

SFH4233

Abstract: JS-001-2011
Contextual Info: 2013-01-15 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4233 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 940 nm

AEC-Q101-REV-C

Abstract: SFH4239
Contextual Info: 2012-12-03 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4239 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 940 nm

4236

Abstract: SFH4236
Contextual Info: 2012-03-27 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4236 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 850 nm

Contextual Info: 2013-10-24 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 SFH 4235 Features: Besondere Merkmale: • • • • • IR lightsource with high efficiency Double Stack emitter Low thermal resistance (Max. 9 K/W)

SFH4235

Abstract: OHF04187
Contextual Info: 2013-01-15 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4235 Features: Besondere Merkmale: • • • • • IR lightsource with high efficiency Double Stack emitter Low thermal resistance (Max. 9 K/W)