HIGH POWER BIPOLAR TRANSISTOR SELECTION Search Results

HIGH POWER BIPOLAR TRANSISTOR SELECTION Result Highlights (5)

Part	Manufacturer	Description
GC321AD7LP103KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331AD7LQ153KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331CD7LQ473KX19K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC343DD7LP334KX18K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC355DD7LQ224KX18K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive

HIGH POWER BIPOLAR TRANSISTOR SELECTION Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
STN0214 Abstract: N0214 Power Bipolar Transistor Text: STN0214 Very high voltage NPN power transistor Features • High gain ■ Very high voltage capability 4 Applications 1 ■ Haptic ■ High voltage solenoid driving 2 3 SOT-223 Description The device is an NPN power bipolar transistor manufactured using the latest high-voltage	Original	STN0214 OT-223 N0214 OT-223 STN0214 Power Bipolar Transistor	PDF
2sc5200 Abstract: 2sc5200 amplifier circuit 2sc5200 amplifier circuit diagram 2sc5200 power amplifiers diagram 2sc5200 amplifiers circuit diagram TRANSISTOR 2SC5200 2sc5200 transistor use audio amplifiers amplifier 2sc5200 amplifiers circuits diagram 2Sc5200 TRANSISTOR schematic diagram power amplifier 2sc5200 transistor Text: 2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz Application ■ Audio power amplifier Description 1 2 3 TO-264 This device is a NPN transistor manufactured	Original	2SC5200 O-264 2sc5200 2sc5200 amplifier circuit 2sc5200 amplifier circuit diagram 2sc5200 power amplifiers diagram 2sc5200 amplifiers circuit diagram TRANSISTOR 2SC5200 2sc5200 transistor use audio amplifiers amplifier 2sc5200 amplifiers circuits diagram 2Sc5200 TRANSISTOR schematic diagram power amplifier 2sc5200 transistor	PDF
bipolar transistor ghz s-parameter Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10 Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in	Original	HBFP-0450 HBFP-0450 OT-343 SC-70) 031-inch 59257503E-13 292E-1 bipolar transistor ghz s-parameter 1565E LL2012-F 5e19 bipolar transistor s-parameter COND10	PDF
2sd1047 Abstract: transistor 2sd1047 2SD1047 transistor Text: 2SD1047 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured	Original	2SD1047 2SD1047 transistor 2sd1047 2SD1047 transistor	PDF
Untitled Abstract: No abstract text available Text: 2STA1943 High power PNP epitaxial planar bipolar transistor PRELIMINARY DATA Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5200 ■ Fast-switching speed ■ Typical fT= 30MHz Description 1 This device is a PNP transistor manufactured	Original	2STA1943 -230V 2STC5200 30MHz O-264 2STA1943 O-264	PDF
T13005 Abstract: STT13005 0016114E JESD97 st 125mA dc dc NPN POWER TRANSISTOR "SOT-32" Text: STT13005 High voltage fast-switching NPN power transistor General features • NPN bipolar transistor ■ Medium voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications	Original	STT13005 OT-32 T13005 STT13005 0016114E JESD97 st 125mA dc dc NPN POWER TRANSISTOR "SOT-32"	PDF
Untitled Abstract: No abstract text available Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance	Original	BUV298V 2002/93/EC	PDF
schematic diagram motor control Abstract: schematic diagram motor BUV298V JESD97 Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance	Original	BUV298V 2002/93/EC schematic diagram motor control schematic diagram motor BUV298V JESD97	PDF
Untitled Abstract: No abstract text available Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance	Original	BUV298V 2002/93/EC 200ot	PDF
2Sta1943 Abstract: 2STC5200 JESD97 TRANSISTOR POWER AMPLIFIER Text: 2STA1943 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5200 ■ Fast-switching speed ■ Typical fT = 30 MHz Application ■ 1 Audio power amplifier 2 3 TO-264 Description This device is a NPN transistor manufactured	Original	2STA1943 -230V 2STC5200 O-264 2Sta1943 2STC5200 JESD97 TRANSISTOR POWER AMPLIFIER	PDF
Untitled Abstract: No abstract text available Text: 2STA1962 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a NPN transistor manufactured	Original	2STA1962 -230V 2STC5242 2STA1962	PDF
Untitled Abstract: No abstract text available Text: 2STC5242 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > 230V ■ Complementary to 2STA1962 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a NPN transistor manufactured	Original	2STC5242 2STA1962 2STC5242	PDF
2STA1962 Abstract: 2STC5242 JESD97 Text: 2STA1962 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a PNP transistor manufactured	Original	2STA1962 2STC5242 2STA1962 2STC5242 JESD97	PDF
2STC5242 Abstract: 2STA1962 JESD97 Text: 2STC5242 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 230 V ■ Complementary to 2STA1962 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a NPN transistor manufactured	Original	2STC5242 2STA1962 2STC5242 2STA1962 JESD97	PDF

2sta2121 Abstract: 2STC5949 JESD97 Text: 2STC5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2STA2121 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Application ■ Audio power amplifier TO-264 Description The device is a NPN transistor manufactured	Original	2STC5949 2STA2121 O-264 2sta2121 2STC5949 JESD97	PDF
2STC5200 Abstract: 2STA1943 JESD97 Text: 2STC5200 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > 230V ■ Complementary to 2STA1943 ■ Fast-switching speed ■ Typical fT = 30 MHz Application ■ 1 Audio power amplifier 2 3 TO-264 Description This device is a NPN transistor manufactured	Original	2STC5200 2STA1943 O-264 2STC5200 2STA1943 JESD97	PDF
RF Transistor s-parameter Abstract: HBFP-0450 ADS MODEL HBFP0450 Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction Hewlett-Packard’s HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in a 4-lead SOT-343 SC-70 surface mount package. Described as a high performance, medium	Original	HBFP-0450 OT-343 SC-70) 031-inch 5968-2788E RF Transistor s-parameter HBFP-0450 ADS MODEL HBFP0450	PDF
2ST5949 Abstract: 2ST2121 JESD97 Text: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Application ■ 1 Audio power amplifier 2 TO-3 Description The device is a NPN transistor manufactured	Original	2ST5949 2ST2121 2ST5949 2ST2121 JESD97	PDF
2sc5200 amplifier circuit Abstract: 2SC5200 2sc5200 amplifier circuit diagram TRANSISTOR 2SC5200 2sc5200 amplifier schematic diagram power amplifier 2sc5200 transistor 2SC5200 Technical Data 2sc5200 transistor data 2sc5200 transistor transistor l 2050 Text: 2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz s ct Application ■ u d o Audio power amplifier r P e Description 1 2 3 TO-264 This device is a NPN transistor manufactured	Original	2SC5200 O-264 2SC5200 O-264 2sc5200 amplifier circuit 2sc5200 amplifier circuit diagram TRANSISTOR 2SC5200 2sc5200 amplifier schematic diagram power amplifier 2sc5200 transistor 2SC5200 Technical Data 2sc5200 transistor data 2sc5200 transistor transistor l 2050	PDF
Untitled Abstract: No abstract text available Text: 2STA1837 PNP power bipolar transistor Preliminary data Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC4793 ■ High transition frequency, typical fT = 70 MHz Applications ■ Audio power amplifier ■ Drive stage amplifier s	Original	2STA1837 2STC4793 O-220FP	PDF
Untitled Abstract: No abstract text available Text: 2STC4793 NPN power bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 230 V ■ Complementary to 2STA1837 ■ High transition frequency, typical fT = 100 MHz s ct Applications ■ Audio power amplifier ■ Drive stage amplifier	Original	2STC4793 2STA1837 O-220FP	PDF
Untitled Abstract: No abstract text available Text: 2STA1962 High power PNP epitaxial planar bipolar transistor Preliminary Data Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT= 30MHz 3 Application 2 1 Audio power amplifier TO-3P Description	Original	2STA1962 -230V 2STC5242 30MHz 2STA1962	PDF
st marking code Abstract: No abstract text available Text: 2STA1837 PNP power bipolar transistor Preliminary data Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC4793 ■ High transition frequency, typical fT = 70 MHz Applications ■ Audio power amplifier ■ Drive stage amplifier 3 1 2	Original	2STA1837 2STC4793 O-220FP st marking code	PDF
RBSOA Abstract: transistor crossover Text: SWITCHING TRANSISTOR FUNDAMENTALS The advances in the technology of bipolar switching power transistors have resulted in devices which com bine high-voltage capability, speed, and ruggedness previously thought impossible to obtain in a single transistor. As an example, General Semiconductor	OCR Scan	2N6925A RBSOA transistor crossover	PDF

HIGH POWER BIPOLAR TRANSISTOR SELECTION Search Results

HIGH POWER BIPOLAR TRANSISTOR SELECTION Result Highlights (5)

HIGH POWER BIPOLAR TRANSISTOR SELECTION Datasheets Context Search

STN0214

2sc5200

bipolar transistor ghz s-parameter

2sd1047

Untitled

T13005

Untitled

schematic diagram motor control

Untitled

2Sta1943

Untitled

Untitled

2STA1962

2STC5242

2sta2121

2STC5200

RF Transistor s-parameter

2ST5949

2sc5200 amplifier circuit

Untitled

Untitled

Untitled

st marking code

RBSOA