HIGH GAIN LOW VOLTAGE NPN TRANSISTOR SOT23 Search Results

HIGH GAIN LOW VOLTAGE NPN TRANSISTOR SOT23 Result Highlights (5)

Part	Manufacturer	Description
GC321AD7LP103KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331AD7LQ153KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331CD7LQ473KX19K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC343DD7LP334KX18K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC355DD7LQ224KX18K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive

HIGH GAIN LOW VOLTAGE NPN TRANSISTOR SOT23 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2STR1215 LOW VOLTAGE FAST-SWITCHING HIGH GAIN NPN POWER TRANSISTOR Features • VERY LOW COLLECTOR-EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAST-SWITCHING SPEED ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE ■ MINIATURE SOT-23 PLASTIC PACKAGE	Original	2STR1215 2002/93/EC OT-23 OT-23 2STR1215 2STR2215	PDF
TS16949 Abstract: ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF marking 1d4 Text: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications	Original	ZXTN07045EFF OT23F, ZXTP07040DFF OT23F OT23F D-81541 TS16949 ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF marking 1d4	PDF
ZETEX GATE DRIVER Abstract: MARKING 1D4 Text: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications	Original	ZXTN07045EFF OT23F, ZXTP07040DFF OT23F and49) 621-ZXTN07045EFFTA ZXTN07045EFFTA ZETEX GATE DRIVER MARKING 1D4	PDF
TRANSISTOR MARKING 1d3 Abstract: ZXTN07012EFF ZXTN07012EFFTA ZXTP07012EFF Text: ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC cont = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications	Original	ZXTN07012EFF OT23F, ZXTP07012EFF OT23F OT23F TRANSISTOR MARKING 1d3 ZXTN07012EFF ZXTN07012EFFTA ZXTP07012EFF	PDF
marking 1d4 Abstract: TS16949 ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF Text: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications	Original	ZXTN07045EFF OT23F, ZXTP07040DFF OT23F OT23F D-81541 marking 1d4 TS16949 ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF	PDF
Untitled Abstract: No abstract text available Text: ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC cont = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications	Original	ZXTN07012EFF OT23F, ZXTP07012EFF OT23F OT23F	PDF
marking 269-3 sot23 Abstract: NE68618-T1-A IC ua 741 T 0599 Text: SILICON TRANSISTOR NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	NE686 8639R NE68618-T1-A NE68619-T1-A NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 marking 269-3 sot23 IC ua 741 T 0599	PDF
transistor BF 697 Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507 Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE	Original	NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507	PDF
making 2a sot23 Abstract: ZXTN2040F ZXTN2040FTA ZXTN2040FTC ZXTP2041F Text: ZXTN2040F SOT23 40 volt NPN silicon planar medium power transistor Summary V BR CEO > 40V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it	Original	ZXTN2040F 500mV ZXTP2041F ZXTN2040FTA ZXTN2040FTC making 2a sot23 ZXTN2040F ZXTN2040FTA ZXTN2040FTC ZXTP2041F	PDF
ZXTP2041 Abstract: ic 4446 P41 sot23 NPN Text: ZXTP2041F SOT23 40 volt NPN silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it	Original	ZXTP2041F -500mV ZXTP2041F ZXTP2041FTA ZXTP2041FTC ZXTP2041 ic 4446 P41 sot23 NPN	PDF
STC123SF Abstract: marking 123 Text: STC123SF Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability	Original	STC123SF STC123SF OT-23F KST-2095-000 100mA 500mA, marking 123	PDF
STD123S Abstract: PC 13001 TRANSISTOR Text: STD123S Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability	Original	STD123S OT-23 KST-2059-002 100mA 500mA, STD123S PC 13001 TRANSISTOR	PDF
AUK sot 123 Abstract: marking 123 Text: STD123S Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability	Original	STD123S STD123S OT-23 KSD-T5C034-000 AUK sot 123 marking 123	PDF
STD123SF Abstract: No abstract text available Text: STD123SF Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability	Original	STD123SF OT-23F KST-2095-001 100mA 500mA, STD123SF	PDF

3STR1630 Abstract: STMicroelectronics marking code date SOT 23 Text: 3STR1630 Low voltage high performance NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package ECOPACK 2 grade for surface mounting circuits	Original	3STR1630 OT-23 OT-23 3STR1630 STMicroelectronics marking code date SOT 23	PDF
marking code SS SOT23 Abstract: marking code SS SOT23 transistor Text: 3STR1630 Low voltage high performance NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package ECOPACK 2 grade for surface mounting circuits	Original	3STR1630 OT-23 OT-23 marking code SS SOT23 marking code SS SOT23 transistor	PDF
3STR1630 Abstract: No abstract text available Text: 3STR1630 Low voltage high performance NPN power transistor Preliminary data Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package ECOPACK 2 grade for surface mounting	Original	3STR1630 OT-23 OT-23 3STR1630	PDF
2STR1215 Abstract: 2STR2215 JESD97 Text: 2STR1215 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Applications	Original	2STR1215 OT-23 OT-23 2STR1215 2STR2215. 2STR2215 JESD97	PDF
2STR1160 Abstract: 2STR2160 JESD97 Text: 2STR1160 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Description	Original	2STR1160 OT-23 OT-23 2STR2160. 2STR1160 2STR2160 JESD97	PDF
85500 transistor Abstract: transistor d 13009 NPN Transistor 13009 transistor MJE 13009 k 13009 c 5929 transistor transistor E 13009 BR 13009 NE685 CCE 7100 Text: SILICON TRANSISTOR NE685 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER	Original	NE685 8539R NE68518-T1-A NE68519-T1-A NE68530-T1-A NE68533-T1-A NE68539-T1-A NE68539R-T1 85500 transistor transistor d 13009 NPN Transistor 13009 transistor MJE 13009 k 13009 c 5929 transistor transistor E 13009 BR 13009 CCE 7100	PDF
BJT BF 331 Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	NE680 NE680 24-Hour BJT BF 331 mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE68018	PDF
ne666 Abstract: 21421 Series ic 74600 NE686 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fTof 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21EI2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 = 11 dB @ 1 V, 5 mA, 2 GHz	OCR Scan	IS21EI2 NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 ne666 21421 Series ic 74600	PDF
702 TRANSISTOR sot-23 Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	OCR Scan	NE680 NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B 702 TRANSISTOR sot-23 mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331	PDF
mje 1303 Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	OCR Scan	NE680 NE68Q NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B mje 1303 transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 15T09 model RB-30 S PT 100	PDF

HIGH GAIN LOW VOLTAGE NPN TRANSISTOR SOT23 Search Results

HIGH GAIN LOW VOLTAGE NPN TRANSISTOR SOT23 Result Highlights (5)

HIGH GAIN LOW VOLTAGE NPN TRANSISTOR SOT23 Datasheets Context Search

Untitled

TS16949

ZETEX GATE DRIVER

TRANSISTOR MARKING 1d3

marking 1d4

Untitled

marking 269-3 sot23

transistor BF 697

making 2a sot23

ZXTP2041

STC123SF

STD123S

AUK sot 123

STD123SF

3STR1630

marking code SS SOT23

3STR1630

2STR1215

2STR1160

85500 transistor

BJT BF 331

ne666

702 TRANSISTOR sot-23

mje 1303