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    HIGH FREQUENCY TRANSISTOR GA AS FET Search Results

    HIGH FREQUENCY TRANSISTOR GA AS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    HIGH FREQUENCY TRANSISTOR GA AS FET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NEC D 809 F

    Abstract: transistor NEC D 586 NE321000 NF 841 nec 0882 s11 diode shottky
    Text: DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and


    Original     		NE321000 NE321000 NEC D 809 F transistor NEC D 586 NF 841 nec 0882 s11 diode shottky PDF

    transistor NEC D 882 p

    Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor NE29200 NE292 574 nec low noise, hetero junction fet nec, hetero junction transistor transistor NEC 882 p
    Text: DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE29200 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and


    Original     		NE29200 NE29200 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p nec d 882 p transistor NE292 574 nec low noise, hetero junction fet nec, hetero junction transistor transistor NEC 882 p PDF

    low noise, hetero junction fet

    Abstract: high frequency transistor ga as fet NE27200 s11 diode shottky NE32500 nec, hetero junction transistor GA 88 KA 88
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable


    Original     		NE32500, NE27200 NE32500 NE27200 NE32500 low noise, hetero junction fet high frequency transistor ga as fet s11 diode shottky nec, hetero junction transistor GA 88 KA 88 PDF

    NEC D74

    Abstract: transistor D113 NEC D76 NE32900 nec, hetero junction transistor 4560d GHz Power FET low noise, hetero junction fet NEC D70
    Text: DATA SHEET PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped


    Original     		NE32900 NE32900 NEC D74 transistor D113 NEC D76 nec, hetero junction transistor 4560d GHz Power FET low noise, hetero junction fet NEC D70 PDF

    D2504 transistor

    Abstract: d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 NE329S01
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent low


    Original     		NE329S01 NE329S01 NE329S01-T1 D2504 transistor d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 PDF

    transistor ne425s01

    Abstract: NEC Ga FET marking L C10535E NE425S01 NE425S01-T1 NE425S01-T1B NEC Ga FET marking C
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		NE425S01 NE425S01 NE425S01-T1B NE425S01-T1 transistor ne425s01 NEC Ga FET marking L C10535E NE425S01-T1 NE425S01-T1B NEC Ga FET marking C PDF

    low noise, hetero junction fet

    Abstract: NE325S01 NEC Ga FET marking L C10535E NE325S01-T1 NE325S01-T1B TRANSISTOR 318 NEC Ga FET marking A ne325
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE325S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		NE325S01 NE325S01 NE325S01-T1B NE325S01-T1 low noise, hetero junction fet NEC Ga FET marking L C10535E NE325S01-T1 NE325S01-T1B TRANSISTOR 318 NEC Ga FET marking A ne325 PDF

    NEC D288

    Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		NE32984D NE32984D NEC D288 d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116 PDF

    transistor NEC D 882 p

    Abstract: nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 NE32400 transistor NEC 882 p NE24200
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable


    Original     		NE32400, NE24200 NE32400 NE24200 NE32400 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 transistor NEC 882 p PDF

    The Japanese Transistor Manual 1981

    Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		NE32484A NE32484A NE32484A-SL The Japanese Transistor Manual 1981 japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking PDF

    NE42484C

    Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		NE42484C NE42484C NE42484C-SL 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking PDF

    D2394

    Abstract: transistor d1071 d1071 transistor transistor d774 transistor NEC D 882 p transistor D798 D774 transistor D1547 TRANSISTOR d1677 TRANSISTOR D405
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm hetero junction to create high mobility electrons.


    Original     		NE24283B NE24283B D2394 transistor d1071 d1071 transistor transistor d774 transistor NEC D 882 p transistor D798 D774 transistor D1547 TRANSISTOR d1677 TRANSISTOR D405 PDF

    high frequency transistor ga as fet

    Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
    Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .


    Original     		ATP-1054, 5963-2025E 5966-0779E high frequency transistor ga as fet ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter PDF

    high power FET transistor s-parameters

    Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
    Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .


    Original     		ATP-1054, 5963-2025E 5966-0779E high power FET transistor s-parameters high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET PDF

    d1557

    Abstract: d472 TRANSISTOR TRANSISTOR d1557 transistor d472 D1162 D1790 D1557 transistor D1866 Nec d862 transistor D442
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    Original     		NE428M01 NE428M01 200Pm NE428M01-T1 d1557 d472 TRANSISTOR TRANSISTOR d1557 transistor d472 D1162 D1790 D1557 transistor D1866 Nec d862 transistor D442 PDF

    d768 transistor

    Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442 PDF

    transistor D227

    Abstract: nec D227 transistor k 4212 fet D3052 NE23383B transistor d115 NEC D74 transistor d145 transistor D95 D1542
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Herero Junction FET that utilizes the Unit : mm hetero junction to create high mobility electrons.


    Original     		NE23383B NE23383B transistor D227 nec D227 transistor k 4212 fet D3052 transistor d115 NEC D74 transistor d145 transistor D95 D1542 PDF

    transistor marking v72

    Abstract: transistor k 2628 NEC Ga FET marking C C10535E NE429M01 NE429M01-T1 VP15-00-3 hjfet NEC Ga FET marking A
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    Original     		NE429M01 NE429M01 NE429M01-T1 transistor marking v72 transistor k 2628 NEC Ga FET marking C C10535E NE429M01-T1 VP15-00-3 hjfet NEC Ga FET marking A PDF

    nec k 813

    Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		NE33284A NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A nec k 813 s11 diode shottky IEI1207 NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS PDF

    transistor marking v79 ghz

    Abstract: NE3508M04-A marking v79 ne3508m04 NE3508M04-T2-A HS350 NE3508M04-T2
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transistor marking v79 ghz NE3508M04-A marking v79 ne3508m04 NE3508M04-T2-A HS350 NE3508M04-T2 PDF

    transistor marking v80 ghz

    Abstract: HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 DSA0029112 NE3509M04. S2P sdars lna
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A transistor marking v80 ghz HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 DSA0029112 NE3509M04. S2P sdars lna PDF

    transistor k 4212 fet

    Abstract: gd 361 transistor
    Text: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		NE23383B NE23383B transistor k 4212 fet gd 361 transistor PDF

    transistor NEC D 586

    Abstract: NEC D 586
    Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility


    OCR Scan     		NE321000, NE29200 NE321000 NE29200 NE321000 P14270E transistor NEC D 586 NEC D 586 PDF

    transistor d 2389

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		NE24283B NE24283B transistor d 2389 PDF