HIGH FREQUENCY TRANSISTOR GA AS FET Search Results

NEC D 809 F

Abstract: transistor NEC D 586 NE321000 NF 841 nec 0882 s11 diode shottky
Contextual Info: DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and

low noise, hetero junction fet

Abstract: high frequency transistor ga as fet NE27200 s11 diode shottky NE32500 nec, hetero junction transistor GA 88 KA 88
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable

transistor ne425s01

Abstract: NEC Ga FET marking L C10535E NE425S01 NE425S01-T1 NE425S01-T1B NEC Ga FET marking C
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent

low noise, hetero junction fet

Abstract: NE325S01 NEC Ga FET marking L C10535E NE325S01-T1 NE325S01-T1B TRANSISTOR 318 NEC Ga FET marking A ne325
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE325S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent

transistor NEC D 882 p

Abstract: nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 NE32400 transistor NEC 882 p NE24200
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable

The Japanese Transistor Manual 1981

Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

high power FET transistor s-parameters

Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
Contextual Info: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .

transistor k 4212 fet

Abstract: gd 361 transistor
Contextual Info: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Herero Junction FET that utilizes the Unit : mm

transistor NEC D 586

Abstract: NEC D 586
Contextual Info: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

transistor marking v72

Abstract: transistor k 2628 NEC Ga FET marking C C10535E NE429M01 NE429M01-T1 VP15-00-3 hjfet NEC Ga FET marking A
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

transistor marking v79 ghz

Abstract: NE3508M04-A marking v79 ne3508m04 NE3508M04-T2-A HS350 NE3508M04-T2
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package

transistor d 2389

Contextual Info: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm

NE3512S02-T1D-A and s2p

Abstract: rt/duroid 5880 NE3512 NE3512S02-T1C ne3512s02 s2p d marking Micro-X maximum gain s2p NE3512S02-T1C-A NE3512S02-T1D-A HS350
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable

NE3515S02

Abstract: NEC Ga FET marking L NE3515S02-T1C-A maximum gain s2p gaas fet micro-X NEC L lnb ku-band NE3515S02-T1C gaas fet micro-X Package marking GaAs S2p NE3515S02 NE3515S02-T1D-A
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA

zo 103 ma 75 607

Abstract: ZO 103 MA 75 505 ATF-21186 P 1060 atf transistor zo 607 zo 607 MA ATF-21186-STR ATF-21186-TR1 5965-8716E
Contextual Info: 0.5 – 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Description • Low Noise Figure: 0.5 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. P1dB @ 2 GHz • High MSG: 13.5 dB Typ. @ 2 GHz • Low Cost Surface Mount Plastic Package

high power FET transistor s-parameters

Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

NE3515S02

Abstract: NE3515S02-T1C-A NE3515S02-T1D-A HS350 NE3515S02-T1C lnb ku-band GaAs S2p NE3515S02
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA

ATF-21186

Abstract: ATF-21186-STR ATF-21186-TR1 0840 057
Contextual Info: 0.5 – 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Description • Low Noise Figure: 0.5 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. P1dB @ 2 GHz • High MSG: 13.5 dB Typ. @ 2 GHz • Low Cost Surface Mount Plastic Package

Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high m obility electrons. Its excellent low noise and high associated gain make it suitable

NE38018 V68

Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
Contextual Info: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz

transistor NEC D 822 P

Abstract: NEC D 822 P C10535E NE434S01 NE434S01-T1 NE434S01-T1B
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent