HIGH FREQUENCY DIODE Search Results

2N3866

Abstract: zetex ztx327 2N2708 Zetex bfy90 Transistor 2N3866 2N2102 2N4427 2N918 BFY90 BSY55
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains

High frequency transistors

Abstract: RF diodes 2N2708 2n3570 2N918 ZT92 BFY90 2N2102 2N4036 ZT91
Contextual Info: HIGH FREQUENCY T AB LE 7 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation Am plifier and Oscillator applications. This table should be referred to in conjunction w ith the RF Diodes

Contextual Info: GaAs MULTIPLIER DIODES ISIS Frequency Multiplier TM MIV41001 – MIV41013 Features High Output Powers — Over 5 W at 35 GHz High Efficiency 2 and 3 Stack Options High Cut-Off Frequency Low Thermal Resistance Applications Frequency Multipliers to Beyond 110 GHz

SO-16

Abstract: 4C SOT23-4
Contextual Info: s - s AVALANCHE BREAKDOWN TVS DIODES QUICK REFERENCE GUIDE Bidirectional (Data Lines) Unidirectional (Vcc/Data Lines) I— DC/Low Frequency — High Frequency ESD/EFT ESD/EFT ESDÆFT — Low Frequency High Frequency 1 Line (SOT-23) PSOTQ3LC/24LC 1 Line Pair

diode

Abstract: band switching diode DAP236U DAP236K diodes
Contextual Info: Diodes Band switching diode DAP236U / DAP236K FExternal dimensions Units: mm High frequency diodes FApplications High frequency switching FFeatures 1) Multiple diodes with common anode configuration. 2) High reliability. Band switching diodes FConstruction

Contextual Info: Diodes Band Switching Diode DAP236U •Applications High frequency switching High frequency diodes •External dimensions Units: mm •Features 1)Designed for mounting on small surface areas (UMD3) 2) High reliability Band switching diodes •Construction

Contextual Info: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm * 2.2 ± 0.2DEPTH APPLICATION Clamp diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers MAXIMUM RATINGS

DAN235K

Abstract: band switching diode diode DAN235E DAN235U diodes
Contextual Info: Diodes Band switching diode array DAN235E / DAN235U / DAN235K FExternal dimensions Units: mm High frequency diodes FApplications High frequency switching FFeatures 1) Multiple diodes with common cathode configuration. 2) High reliability. Band switching diodes

DAN235

Abstract: tslg
Contextual Info: Diodes Band Switching Diode DAN235U •Applications •External dimensions Units: mm High frequency diodes High frequency switching •Features 1)Designed for mounting on small surface areas (UMD3) 2)High reliability •Construction Band switching diodes

Contextual Info: GaAs MULTIPLIER DIODES ISIS Frequency Multiplier TM MIV41001 – MIV41013 Features ● High Output Powers — Over 5 W at 35 GHz ● High Efficiency ● 2 and 3 Stack Options ● High Cut-Off Frequency ● Low Thermal Resistance Applications ● Frequency Multipliers to Beyond 110 GHz

Transistor 2N3866

Abstract: P039 zt91 2N2102 2N2708 2N3866 2N4427 2N918 BFY90 BSY55
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICO N PLANAR HIGH FREQUENCY T R A N SIST O R S The transistors show n in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains

Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FX HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1000FX OUTLINE DRAWING • IF AV Average forward current. 800A • V rrm Repetitive peak reverse voltage.4500V Dimensions in mm

rb160l-40

Abstract: RB160L RB160L40 High frequency rectifier
Contextual Info: Diodes High frequency rectifier schottky barrier diode RB160L–40 FApplications High frequency rectification For switching power supply. FExternal dimensions Units: mm Schottky barrier diodes FFeatures 1) Small surface mounting type (PMDS) 2) High reliability

diode BAND

Abstract: DAN235K
Contextual Info: Diodes Band Switching Diode Array DAN235K •Applications •External dimensions Units: mm High frequency diodes High frequency switching •Features 1) Designed for mounting on small surface areas (SMD3) 2)High reliability •Construction Band switching diodes

diode

Abstract: band switching diode silicon diode switching transistor 1SS390
Contextual Info: Diodes Band switching diode New FApplications High frequency switching FExternal dimensions Units: mm High frequency diodes 1SS390 FFeatures 1) Extremely small surface mounting type. (EMD2) 2) High reliability. Band switching diodes FConstruction Silicon epitaxial planar

L1047

Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FH-56 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1000FH-56 OUTLINE DRAWING Dimensions in mm Average forward current. . 1000A • V r r m Repetitive peak reverse voltage. . 2500V, 2800V

FD1500BV-90DA

Abstract: gct thyristor
Contextual Info: MITSUBISHI SOFT RECOVERY DIODES FD1500BV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE APPLICATION Free wheel diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers MAXIMUM RATINGS P aram eter Voltage class Unit V rrm Repetitive peak reverse voltage

alternator dual voltage 12V 24V

Abstract: 200V AUTOMOTIVE MOSFET 24v alternator regulator ic 100v input regulator 24V alternator load dump ALTERNATOR REGULATOR 14v Alternator regulator ISO7637 MAX6398 mosfet alternator
Contextual Info: Maxim > App Notes > ASICs Keywords: High switching frequency and high voltage operation Jul 17, 2007 APPLICATION NOTE 3893 High-Frequency Automotive Power Supplies Abstract: The combination of high switching frequency and high-voltage capability is difficult to achieve in IC design.

Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD2000DU-120 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD2000DU-120 Average forward current. . 1700A • V r r m Repetitive peak reverse voltage. . 6000V • Q rr Reverse recovery charge. . 1500jiC

Contextual Info: Diodes Band Switching Diode 1SS356 •Applications High frequency switching High frequency diodes •External dimensions Units: mm CATHODE MARK n •Features 1)Designed for mounting on small surface areas (UMD2) 2)High reliability TT •Construction Silicon epitaxial planar

Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FV-90 • lF AV Average forw ard c u rre n t. . 800A • V Repetitive peak reverse voltage. . 3500 ~ 4500V

Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FX-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FX-90 ' « * lF AV Average forw ard c u rre n t. .800A • V rrm Repetitive peak reverse voltage. . 4500V

Contextual Info: STPS20M60 Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K Description The STPS20M60D is a single diode Schottky rectifier, suited for high frequency switch mode

A 314J

Abstract: RB160L-40 U100-P
Contextual Info: RB160L-40 Diodes High frequency rectifier schottky barrier diode R B 1 6 0 L- 4 0 •External dimensions Units: mm •Applications High frequency rectification For switching power supply. •Features 1) Small surface mounting type (PMDS) 2) High reliability