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    HIGH DC CURRENT GAIN TRANSISTOR Search Results

    HIGH DC CURRENT GAIN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH DC CURRENT GAIN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1834

    Abstract: T100
    Text: 2SD1834 Transistors Medium Power Transistor 60V, 1A 2SD1834 zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. MPT3 1.5 2.5 4.0


    Original     		PDF 2SD1834 2SD1834 T100

    2SD1834

    Abstract: No abstract text available
    Text: Medium Power Transistor 60V, 1A 2SD1834 Dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. MPT3 1.5 2.5 4.0 0.5 4.5 1.6 Inner circuit


    Original     		PDF 2SD1834 R1010A 2SD1834

    2SD1834

    Abstract: T100 05 marking code transistor ROHM
    Text: Medium Power Transistor 60V, 1A 2SD1834 Dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. MPT3 1.5 2.5 4.0 0.5 4.5 1.6 Inner circuit


    Original     		PDF 2SD1834 R1010A 2SD1834 T100 05 marking code transistor ROHM

    2SD1834

    Abstract: No abstract text available
    Text: Medium Power Transistor 60V, 1A 2SD1834 Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. Dimensions (Unit : mm) MPT3 1.5 2.5 4.0 0.5 4.5 1.6 Inner circuit


    Original     		PDF 2SD1834 R1010A 2SD1834

    2SD2120

    Abstract: No abstract text available
    Text: Ordering number:EN3239 NPN Epitaxial Planar Silicon Transistor 2SD2120 General Driver Applications Features Package Dimensions • Darlington connection Contains bias resistance, damper diode . · High DC current gain. · Less dependence of DC current gain on temperature.


    Original     		PDF EN3239 2SD2120 2SD2120] 2SD2120

    2SD2144S

    Abstract: No abstract text available
    Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).


    Original     		PDF 2SD2114K 2SD2144S 500mA 2SD2114K SC-59 15Min. 2SD2144S

    2SD2144S

    Abstract: 2SD2114K SC-72 T146
    Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).


    Original     		PDF 2SD2114K 2SD2144S 500mA 2SD2114K SC-59 15Min. 2SD2144S SC-72 T146

    2SD2144S

    Abstract: 2SD2114K SC-72 T146
    Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).


    Original     		PDF 2SD2114K 2SD2144S 500mA 2SD2114K SC-59 15Min. 100mV 2SD2144S SC-72 T146

    2SD2144S

    Abstract: No abstract text available
    Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).


    Original     		PDF 2SD2114K 2SD2144S 500mA 2SD2114K SC-59 15Min. 2SD2144S

    B13007D

    Abstract: JESD97 STB13007DT4 T0-263
    Text: STB13007DT4 High voltage fast-switching NPN power transistor General features • Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range ■ High voltage capability ■ Integrated free-wheeling diode


    Original     		PDF STB13007DT4 T0-263) 2002/93/EC B13007D JESD97 STB13007DT4 T0-263

    Untitled

    Abstract: No abstract text available
    Text: STB13007DT4 High voltage fast-switching NPN power transistor General features • Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range ■ High voltage capability ■ Integrated free-wheeling diode


    Original     		PDF STB13007DT4 T0-263) 2002/93/EC

    freewheeling diode 5A

    Abstract: B13007D JESD97 STB13007DT4 T0-263
    Text: STB13007DT4 High voltage fast-switching NPN power transistor General features • Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range ■ High voltage capability ■ Integrated free-wheeling diode


    Original     		PDF STB13007DT4 2002/93/EC T0-263) freewheeling diode 5A B13007D JESD97 STB13007DT4 T0-263

    Untitled

    Abstract: No abstract text available
    Text: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Dimensions (Unit : mm)


    Original     		PDF 2SD2114K 500mA SC-59 R1120A

    2SD1258

    Abstract: No abstract text available
    Text: Power Transistors 2SD1258 2SD1258 Silicon NPN Triple-Diffused Planar Type Package Dimensions High DC Current Gain hFe , Power Amplifier • Features • High DC current gain (Iife) • Good linearity of DC current gain (hra) • “N Type” package configuration with a cooling fin for direct soldering


    OCR Scan     		PDF 2SD1258 100-c 2SD1258

    2SC3616

    Abstract: 200F NEC PA33 nec 200f
    Text: NPN SILICON TRANSISTOR 2SC3616 DESCRIPTION The 2SC3616 is designed fo r general-purpose applications requiring High DC Current Gain. This is suitable fo r all kind of driving, instead of Darlington Transistor, or muting. FEATURES • High DC Current Gain.


    OCR Scan     		PDF 2SC3616 2SC3616 200F NEC PA33 nec 200f

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1259, 2SD1259A 2SD1259, 2SD1259A Silicon NPN Triple-Diffused Planar Type • Package Dimensions High DC Current Gain hFE , Power Amplifier ■ Features • High DC c u rre n t gain (hFE) • Good linearity of DC cu rre n t gain (I i f e )


    OCR Scan     		PDF 2SD1259, 2SD1259A 2SD1259 001bb47

    2SD111

    Abstract: 2SD1776 2SD1776A
    Text: 2SD1776, 2SD1776A P o w e r T ra n s is to rs 2SD1776, 2SD1776A Silicon NPN Triple-Diffused Planar Type High DC C urrent Gain h FE , Package Dim ensions Power A m plifier • Features • High DC current gain (hn;) • Good linearity of DC current gain (hi E)


    OCR Scan     		PDF 2SD1776, 2SD1776A 2SD1776 2SD1776A 2SD1772/A) 2SD111

    Untitled

    Abstract: No abstract text available
    Text: ST13007 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . . . . IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS


    OCR Scan     		PDF ST13007

    2SD1755

    Abstract: VUO60
    Text: Power Transistors 2SD1755 2S D 1755 Silicon NPN Epitaxial Planar Type Package D im ensions High DC C urrent Gain hFE , Pow er A m plifier U n i t ! mm • Features • High DC current gain 3.7 max 7 .3 ma x. (I i f e ) 3 .2 m a x. 0. 9 ± 0 . 1 0.5max. • Good linearity of DC current gain (htE)


    OCR Scan     		PDF 2SD1755 2SD1747/A) 2SD1755 VUO60

    2SD1774

    Abstract: 2SD1774A LTO 100 F
    Text: Power Transistors 2SD1774, 2SD1774A 2 S D 1 7 7 4 , 2SD1174A Silicon N P N Trip le-D iffu sed Planar Type High DC C urrent Gain Package D im ensions Power A m plifier Ii f e , U n it ! mm • Features 10-5 ± 0 ,5 • High DC current gain (hFE) s • Good linearity of DC current gain


    OCR Scan     		PDF 2SD1774, 2SD1774A 2SD1174A 2SD1774 2SD1774_ 2SD1774A~ 2SD1770/A) 2SD1774A LTO 100 F

    2SD2120

    Abstract: No abstract text available
    Text: Ordering number: EN 3239 2SD2120 No.3239 SA I YO NPN Epitaxial Planar Silicon Transistor i General Driver Applications F eatures •Darlington connection Contains bias resistance, damper diode • High DC current gain *Less dependence of DC current gain on temperature


    OCR Scan     		PDF 2SD2120

    TF-450

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching


    OCR Scan     		PDF ZTX1047A NY11725 JS70S7Ã TF-450

    e50p

    Abstract: 2SB1639 2SD2318
    Text: High-current gain Power Transistor 60V, 3A 2SD2318 •Features 1) High DC current gain. 2) Low saturation voltage. •External dimensions (Units: mm) (Typ. VcE(sat) =0.5V at Ic / Ib=2A / 0.5A) 3) Complements the 2SB1639.


    OCR Scan     		PDF 2SD2318 2SB1639. SC-63 100ms e50p 2SB1639 2SD2318

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber:E N 2 5 0 7 _ 2SD1953 NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications Applications . Motor drivers, printer hammer drivers, relay drivers Features . Darlington connection . High DC current gain . Low dependence of DC current gain on temperature


    OCR Scan     		PDF 2SD1953 20V/1 100jiA 4227TA M507-1/3